The properties of transparent semiconductor Zn1 - xTixO thin films prepared by the sol-gel method

Chien Yie Tsay, Hua Chi Cheng, Chin Yi Chen, Kan Ju Yang, Chung Kwei Lin

Research output: Contribution to journalArticle

30 Citations (Scopus)

Abstract

Transparent semiconductor thin films of Zn1 - xTixO (0 ≦ x ≦ 0.12) were deposited on alkali-free glass substrates by the sol-gel method. The effects of Ti addition on the crystallization, microstructure, optical properties and resistivity of ZnO thin films were investigated. The as-coated films were preheated at 300 °C, and then annealed at 500 °C in air ambiance. X-ray diffraction results showed all polycrystalline Zn1 - xTixO thin films with preferred orientation along the (002) plane. Ti incorporated within the ZnO thin films not only decreased surface roughness but also increased optical transmittance and electrical resistivity. In the present study, the Zn0.88Ti0.12O film exhibited the best properties, namely an average transmittance of 91.0% (an increase of ~ 12% over the pure ZnO film) and an RMS roughness value of 1.04 nm.

Original languageEnglish
Pages (from-to)1603-1606
Number of pages4
JournalThin Solid Films
Volume518
Issue number5
DOIs
Publication statusPublished - Dec 31 2009
Externally publishedYes

Fingerprint

Sol-gel process
gels
Semiconductor materials
Thin films
thin films
electrical resistivity
transmittance
Surface roughness
ambience
Opacity
Alkalies
Crystallization
alkalies
surface roughness
roughness
Optical properties
crystallization
optical properties
X ray diffraction
Glass

Keywords

  • Sol-gel method
  • Transparent oxide semiconductors
  • ZnTiO thin films

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry
  • Metals and Alloys
  • Surfaces, Coatings and Films
  • Surfaces and Interfaces

Cite this

The properties of transparent semiconductor Zn1 - xTixO thin films prepared by the sol-gel method. / Tsay, Chien Yie; Cheng, Hua Chi; Chen, Chin Yi; Yang, Kan Ju; Lin, Chung Kwei.

In: Thin Solid Films, Vol. 518, No. 5, 31.12.2009, p. 1603-1606.

Research output: Contribution to journalArticle

Tsay, Chien Yie ; Cheng, Hua Chi ; Chen, Chin Yi ; Yang, Kan Ju ; Lin, Chung Kwei. / The properties of transparent semiconductor Zn1 - xTixO thin films prepared by the sol-gel method. In: Thin Solid Films. 2009 ; Vol. 518, No. 5. pp. 1603-1606.
@article{0cb947d85fbb4cf280000fa9c8db588f,
title = "The properties of transparent semiconductor Zn1 - xTixO thin films prepared by the sol-gel method",
abstract = "Transparent semiconductor thin films of Zn1 - xTixO (0 ≦ x ≦ 0.12) were deposited on alkali-free glass substrates by the sol-gel method. The effects of Ti addition on the crystallization, microstructure, optical properties and resistivity of ZnO thin films were investigated. The as-coated films were preheated at 300 °C, and then annealed at 500 °C in air ambiance. X-ray diffraction results showed all polycrystalline Zn1 - xTixO thin films with preferred orientation along the (002) plane. Ti incorporated within the ZnO thin films not only decreased surface roughness but also increased optical transmittance and electrical resistivity. In the present study, the Zn0.88Ti0.12O film exhibited the best properties, namely an average transmittance of 91.0{\%} (an increase of ~ 12{\%} over the pure ZnO film) and an RMS roughness value of 1.04 nm.",
keywords = "Sol-gel method, Transparent oxide semiconductors, ZnTiO thin films",
author = "Tsay, {Chien Yie} and Cheng, {Hua Chi} and Chen, {Chin Yi} and Yang, {Kan Ju} and Lin, {Chung Kwei}",
year = "2009",
month = "12",
day = "31",
doi = "10.1016/j.tsf.2009.09.054",
language = "English",
volume = "518",
pages = "1603--1606",
journal = "Thin Solid Films",
issn = "0040-6090",
publisher = "Elsevier",
number = "5",

}

TY - JOUR

T1 - The properties of transparent semiconductor Zn1 - xTixO thin films prepared by the sol-gel method

AU - Tsay, Chien Yie

AU - Cheng, Hua Chi

AU - Chen, Chin Yi

AU - Yang, Kan Ju

AU - Lin, Chung Kwei

PY - 2009/12/31

Y1 - 2009/12/31

N2 - Transparent semiconductor thin films of Zn1 - xTixO (0 ≦ x ≦ 0.12) were deposited on alkali-free glass substrates by the sol-gel method. The effects of Ti addition on the crystallization, microstructure, optical properties and resistivity of ZnO thin films were investigated. The as-coated films were preheated at 300 °C, and then annealed at 500 °C in air ambiance. X-ray diffraction results showed all polycrystalline Zn1 - xTixO thin films with preferred orientation along the (002) plane. Ti incorporated within the ZnO thin films not only decreased surface roughness but also increased optical transmittance and electrical resistivity. In the present study, the Zn0.88Ti0.12O film exhibited the best properties, namely an average transmittance of 91.0% (an increase of ~ 12% over the pure ZnO film) and an RMS roughness value of 1.04 nm.

AB - Transparent semiconductor thin films of Zn1 - xTixO (0 ≦ x ≦ 0.12) were deposited on alkali-free glass substrates by the sol-gel method. The effects of Ti addition on the crystallization, microstructure, optical properties and resistivity of ZnO thin films were investigated. The as-coated films were preheated at 300 °C, and then annealed at 500 °C in air ambiance. X-ray diffraction results showed all polycrystalline Zn1 - xTixO thin films with preferred orientation along the (002) plane. Ti incorporated within the ZnO thin films not only decreased surface roughness but also increased optical transmittance and electrical resistivity. In the present study, the Zn0.88Ti0.12O film exhibited the best properties, namely an average transmittance of 91.0% (an increase of ~ 12% over the pure ZnO film) and an RMS roughness value of 1.04 nm.

KW - Sol-gel method

KW - Transparent oxide semiconductors

KW - ZnTiO thin films

UR - http://www.scopus.com/inward/record.url?scp=70449491220&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=70449491220&partnerID=8YFLogxK

U2 - 10.1016/j.tsf.2009.09.054

DO - 10.1016/j.tsf.2009.09.054

M3 - Article

AN - SCOPUS:70449491220

VL - 518

SP - 1603

EP - 1606

JO - Thin Solid Films

JF - Thin Solid Films

SN - 0040-6090

IS - 5

ER -