The effect of nitrogen addition to Ar/CH4 gas mixture on microstructural characterization of nanocrystalline diamond

Wei Fang Lee, Chia Yu Wu, Che Tong Lin, Chiao Yun Peng, Hui Wen You, Pei Wen Peng

Research output: Contribution to journalArticlepeer-review

Abstract

In the present study, nanocrystalline diamond (NCD) nanowire films were synthesized on silicon substrates, using microwave plasma-enhanced chemical vapor deposition (PECVD) with a CH4/Ar/N2 gas mixture at moderate temperatures. The influence of nitrogen concentration on the formation of NCD was investigated. The characteristics of NCD films were evaluated using scanning electron microscopy (SEM), Raman spectroscopy, optical emission spectroscopy (OES), and a contact angle meter. NCD nanowire films with 300-500 nm length were grown with the incorporation of nitrogen. Heterostructures of sp3-bonded diamond nanowires and sp2-bonded graphite were synthesized by adding small amounts of nitrogen to the CH4/Ar gas mixture. Surface roughness became smooth and the grain size decreased as the nitrogen was introduced into the CH4/Ar gas mixture. With the increase of nitrogen concentration, the sp2/sp3 ratio of carbon bonds increased. The wettability of the NCD nanowire films was sensitive to the bonding structure. The hydrophobic and non-reactive properties of NCD nanowire films make them highly applicable for biomedical implants.

Original languageEnglish
Pages (from-to)253-258
Number of pages6
JournalJournal of Polymer Engineering
Volume34
Issue number3
DOIs
Publication statusPublished - May 1 2014

Keywords

  • contact angle
  • microwave plasma-enhanced chemical vapor deposition
  • nanocrystalline diamond
  • nitrogen

ASJC Scopus subject areas

  • Materials Chemistry
  • Polymers and Plastics
  • Chemical Engineering(all)

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