Tantalum nitride thin film resistors for high-frequency passive devices at interconnect levels

Chi Chang Wu, Wen Fa Wu, Shan Kai Lin, Jian Yang Lin, Chiu Fen Chiang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The inclusion of precision on-chip passive devices is a new challenge for current and future interconnect architectures. This request for high quality passive devices is mainly driven by advanced high frequency and system-on-a-chip (SOC) applications. Precision thin film resistors are widely used in analog and mixed signal circuits and specific SOC applications. In this paper, tantalum nitride (TaNx) as the thin film resistor was investigated. The sheet resistance and XRD spectra of the TaNx films deposited at various nitrogen flow ratios were analyzed. The pattern of the TaNx resistor was defined by a novel two-step etching process. At the first step, TaN x was etched by Cl2 plasma to obtain a sharp profile and then, at the second step, a Cl2/O2 gas mixture was used to obtain a better etching selectivity. The temperature coefficient of resistance (TCR) of the TaNx resistor formed at various nitrogen flow ratios was measured. It is shown that the TCR increases with increasing nitrogen flow ratio, and TCR stability is slightly improved by the post-deposition plasma treatment. The flicker noise was measured at frequency from 1 to 100k Hz. It is exhibited that the current noise increased with increasing nitrogen flow ratio. Two-ported S parameters of the TaNx resistors were measured at frequency from 1 to 20 GHz. By extracting the S parameters, frequency dependence of the TaNx resistor is shown.

Original languageEnglish
Title of host publicationAdvanced Metallization Conference (AMC)
EditorsD. Erb, P. Ramm, K. Masu, A. Osaki
Pages151-155
Number of pages5
Publication statusPublished - 2004
Externally publishedYes
EventAdvanced Metallization Conference 2004, AMC 2004 - San Diego, CA, United States
Duration: Oct 19 2004Oct 21 2004

Other

OtherAdvanced Metallization Conference 2004, AMC 2004
CountryUnited States
CitySan Diego, CA
Period10/19/0410/21/04

Fingerprint

Tantalum
Nitrides
Resistors
Thin films
Nitrogen
Scattering parameters
Etching
Plasma deposition
Sheet resistance
Gas mixtures
Temperature
Plasmas
Networks (circuits)

ASJC Scopus subject areas

  • Chemical Engineering(all)

Cite this

Wu, C. C., Wu, W. F., Lin, S. K., Lin, J. Y., & Chiang, C. F. (2004). Tantalum nitride thin film resistors for high-frequency passive devices at interconnect levels. In D. Erb, P. Ramm, K. Masu, & A. Osaki (Eds.), Advanced Metallization Conference (AMC) (pp. 151-155)

Tantalum nitride thin film resistors for high-frequency passive devices at interconnect levels. / Wu, Chi Chang; Wu, Wen Fa; Lin, Shan Kai; Lin, Jian Yang; Chiang, Chiu Fen.

Advanced Metallization Conference (AMC). ed. / D. Erb; P. Ramm; K. Masu; A. Osaki. 2004. p. 151-155.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Wu, CC, Wu, WF, Lin, SK, Lin, JY & Chiang, CF 2004, Tantalum nitride thin film resistors for high-frequency passive devices at interconnect levels. in D Erb, P Ramm, K Masu & A Osaki (eds), Advanced Metallization Conference (AMC). pp. 151-155, Advanced Metallization Conference 2004, AMC 2004, San Diego, CA, United States, 10/19/04.
Wu CC, Wu WF, Lin SK, Lin JY, Chiang CF. Tantalum nitride thin film resistors for high-frequency passive devices at interconnect levels. In Erb D, Ramm P, Masu K, Osaki A, editors, Advanced Metallization Conference (AMC). 2004. p. 151-155
Wu, Chi Chang ; Wu, Wen Fa ; Lin, Shan Kai ; Lin, Jian Yang ; Chiang, Chiu Fen. / Tantalum nitride thin film resistors for high-frequency passive devices at interconnect levels. Advanced Metallization Conference (AMC). editor / D. Erb ; P. Ramm ; K. Masu ; A. Osaki. 2004. pp. 151-155
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