Surface Oxidation Doping to Enhance Photogenerated Carrier Separation Efficiency for Ultrahigh Gain Indium Selenide Photodetector

Yih Ren Chang, Po Hsun Ho, Cheng Yen Wen, Tzu Pei Chen, Shao Sian Li, Jhe Yi Wang, Min Ken Li, Che An Tsai, Raman Sankar, Wei Hua Wang, Po Wen Chiu, Fang Cheng Chou, Chun Wei Chen

Research output: Contribution to journalArticle

13 Citations (Scopus)

Abstract

This work presents an ultrahigh gain InSe-based photodetector by using a novel approach called the surface oxidation doping (SOD) technique. The carrier concentration of multilayered two-dimensional (2D) InSe semiconductor surface has been modulated by controlling the formation of a surface oxide layer. The SOD through surface charge transfer at the interface of the oxide/2D InSe semiconductor heterostructure can lead to the creation of a vertical built-in potential and band bending as a result of the carrier concentration distribution gradient. The internal electric field caused by the formation of a carrier concentration gradient in InSe layers can facilitate charge separation of photogenerated electron-hole pairs under light illumination. Consequently, the record high photoresponsivities of InSe-based photodetector with ∼5 × 106 A/W at the excitation wavelength of 365 nm and 5 × 105 A/W at the wavelength of 530 nm can be obtained, outperforming the majority of photodetectors based on other 2D materials, such as graphene, MoS2, and even highly sensitive multilayer GaTe and In2Se3 flakes. The approach based on SOD induced efficient photogenerated charge separation can be also applied to other 2D layered semiconductors.

Original languageEnglish
Pages (from-to)2930-2936
Number of pages7
JournalACS Photonics
Volume4
Issue number11
DOIs
Publication statusPublished - Nov 15 2017
Externally publishedYes

Fingerprint

indium selenides
Semiconductors
Indium
Photodetectors
photometers
Doping (additives)
Oxidation
Oxides
oxidation
Carrier concentration
Graphite
polarization (charge separation)
Lighting
Semiconductor materials
Wavelength
Electrons
Light
Surface charge
gradients
oxides

Keywords

  • field effect transistor
  • indium selenide
  • p-doping
  • photodetector
  • surface oxidation

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Biotechnology
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

Cite this

Surface Oxidation Doping to Enhance Photogenerated Carrier Separation Efficiency for Ultrahigh Gain Indium Selenide Photodetector. / Chang, Yih Ren; Ho, Po Hsun; Wen, Cheng Yen; Chen, Tzu Pei; Li, Shao Sian; Wang, Jhe Yi; Li, Min Ken; Tsai, Che An; Sankar, Raman; Wang, Wei Hua; Chiu, Po Wen; Chou, Fang Cheng; Chen, Chun Wei.

In: ACS Photonics, Vol. 4, No. 11, 15.11.2017, p. 2930-2936.

Research output: Contribution to journalArticle

Chang, YR, Ho, PH, Wen, CY, Chen, TP, Li, SS, Wang, JY, Li, MK, Tsai, CA, Sankar, R, Wang, WH, Chiu, PW, Chou, FC & Chen, CW 2017, 'Surface Oxidation Doping to Enhance Photogenerated Carrier Separation Efficiency for Ultrahigh Gain Indium Selenide Photodetector', ACS Photonics, vol. 4, no. 11, pp. 2930-2936. https://doi.org/10.1021/acsphotonics.7b01030
Chang, Yih Ren ; Ho, Po Hsun ; Wen, Cheng Yen ; Chen, Tzu Pei ; Li, Shao Sian ; Wang, Jhe Yi ; Li, Min Ken ; Tsai, Che An ; Sankar, Raman ; Wang, Wei Hua ; Chiu, Po Wen ; Chou, Fang Cheng ; Chen, Chun Wei. / Surface Oxidation Doping to Enhance Photogenerated Carrier Separation Efficiency for Ultrahigh Gain Indium Selenide Photodetector. In: ACS Photonics. 2017 ; Vol. 4, No. 11. pp. 2930-2936.
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