Stress-induced morphology and fine-line stability enhancement of NiSi on poly-SiGe with a buffer polycrystalline silicon interlayer

Chi Chang Wu, Wen F. Wu, Fu Hsiang Ko, Hsin Chiang You, Wen L. Yang

Research output: Contribution to journalArticle

Abstract

The thermal and morphological stability of NiSi is enhanced by inserting a polycrystalline (poly-Si) buffer layer between the Ni and poly-SiGe films. NiSi films formed on poly-Si/poly-SiGe stack layers possessed continuous, smooth structures after annealing at 500-850 °C. Moreover, nickel germanosilicide [Ni(Si, Ge)] lines formed on the poly-SiGe exhibited a fine-line effect, i.e., the sheet resistance increased upon decreasing the linewidth, whereas the sheet resistance of NiSi lines formed on the poly-Si/poly-SiGe stack layers remained less than 5 square. A model for the stress-confined grain growth and recrystallization is proposed to explain the improved properties of the poly-Si-buffered film.

Original languageEnglish
Article number182106
JournalApplied Physics Letters
Volume92
Issue number18
DOIs
Publication statusPublished - 2008
Externally publishedYes

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interlayers
buffers
augmentation
silicon
thermal stability
nickel
annealing

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Stress-induced morphology and fine-line stability enhancement of NiSi on poly-SiGe with a buffer polycrystalline silicon interlayer. / Wu, Chi Chang; Wu, Wen F.; Ko, Fu Hsiang; You, Hsin Chiang; Yang, Wen L.

In: Applied Physics Letters, Vol. 92, No. 18, 182106, 2008.

Research output: Contribution to journalArticle

Wu, Chi Chang ; Wu, Wen F. ; Ko, Fu Hsiang ; You, Hsin Chiang ; Yang, Wen L. / Stress-induced morphology and fine-line stability enhancement of NiSi on poly-SiGe with a buffer polycrystalline silicon interlayer. In: Applied Physics Letters. 2008 ; Vol. 92, No. 18.
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