Sensitivity analysis of the semiempirical model for the growth of the indigenous Acidithiobacillus thiooxidans

Hsuan Liang Liu, Fu Chiang Yang, Chih Hung Huang, Hsu Wei Fang, Yung Chu Cheng

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

Based on the concept of transport phenomena and driving force, we had previously developed a semiempirical model, in which only one mathematical equation and three parameters (KL, BL, and CL) are required to describe the complicated bacterial growth of the indigenous Acidithiobacillus thiooxidans. In order to determine the effects of these parameters, sensitivity analysis based on Morris method was further conducted in this study. The results show that KL, BL, and CL are closely related to the maximal cell concentration, the growth rate in the exponential phase, and the residual time in the lag phase, respectively. The effects of four important cultivation factors: the concentrations of elemental sulfur (S0), CaCl2, MnSO4, and the initial pH, on these three parameters were also analyzed. The results show that the concentration of elemental sulfur exhibits positive correlations with KL and CL; whereas it exhibits a negative correlation with BL. We have subsequently developed three regression equations to predict the values of these three parameters with the concentration of elemental sulfur as the sole information available. These parameters can be further fed into the semiempirical model for predicting the bacterial growth of the indigenous A. thiooxidans with high accuracy.

Original languageEnglish
Pages (from-to)105-112
Number of pages8
JournalChemical Engineering Journal
Volume129
Issue number1-3
DOIs
Publication statusPublished - May 1 2007
Externally publishedYes

    Fingerprint

Keywords

  • Acidithiobacillus thiooxidans
  • Bioleaching
  • Morris method
  • Semiempirical model
  • Sensitivity analysis

ASJC Scopus subject areas

  • Chemistry(all)
  • Environmental Chemistry
  • Chemical Engineering(all)
  • Industrial and Manufacturing Engineering

Cite this