Self-encapsulated doping of n-type graphene transistors with extended air stability

Po Hsun Ho, Yun Chieh Yeh, Di Yan Wang, Shao Sian Li, Hsin An Chen, Yi Hsuan Chung, Chih Cheng Lin, Wei Hua Wang, Chun Wei Chen

Research output: Contribution to journalArticle

54 Citations (Scopus)

Abstract

This paper presents an innovative approach to fabricating controllable n-type doping graphene transistors with extended air stability by using self-encapsulated doping layers of titanium suboxide (TiOx) thin films, which are an amorphous phase of crystalline TiO 2 and can be solution processed. The nonstoichiometry TiOx thin films consisting of a large number of oxygen vacancies exhibit several unique functions simultaneously in the n-type doping of graphene as an efficient electron-donating agent, an effective dielectric screening medium, and also an encapsulated layer. A novel device structure consisting of both top and bottom coverage of TiOx thin layers on a graphene transistor exhibited strong n-type transport characteristics with its Dirac point shifted up to -80 V and an enhanced electron mobility with doping. Most interestingly, an extended stability of the device without rapid degradation after doping was observed when it was exposed to ambient air for several days, which is not usually observed in other n-type doping methods in graphene. Density functional theory calculations were also employed to explain the observed unique n-type doping characteristics of graphene using TiOx thin films. The technique of using an "active" encapsulated layer with controllable and substantial electron doping on graphene provides a new route to modulate electronic transport behavior of graphene and has considerable potential for the future development of air-stable and large-area graphene-based nanoelectronics.

Original languageEnglish
Pages (from-to)6215-6221
Number of pages7
JournalACS Nano
Volume6
Issue number7
DOIs
Publication statusPublished - Jul 24 2012
Externally publishedYes

Fingerprint

Graphite
graphene
transistors
Doping (additives)
Graphene
air
Air
Titanium
titanium
Thin films
thin films
Nanoelectronics
Graphene transistors
Electrons
Electron mobility
Oxygen vacancies
electron mobility
Density functional theory
Screening
electrons

Keywords

  • air stability
  • grapheme
  • n-type doping of graphene and transistor
  • TiOx

ASJC Scopus subject areas

  • Engineering(all)
  • Materials Science(all)
  • Physics and Astronomy(all)

Cite this

Self-encapsulated doping of n-type graphene transistors with extended air stability. / Ho, Po Hsun; Yeh, Yun Chieh; Wang, Di Yan; Li, Shao Sian; Chen, Hsin An; Chung, Yi Hsuan; Lin, Chih Cheng; Wang, Wei Hua; Chen, Chun Wei.

In: ACS Nano, Vol. 6, No. 7, 24.07.2012, p. 6215-6221.

Research output: Contribution to journalArticle

Ho, PH, Yeh, YC, Wang, DY, Li, SS, Chen, HA, Chung, YH, Lin, CC, Wang, WH & Chen, CW 2012, 'Self-encapsulated doping of n-type graphene transistors with extended air stability', ACS Nano, vol. 6, no. 7, pp. 6215-6221. https://doi.org/10.1021/nn301639j
Ho, Po Hsun ; Yeh, Yun Chieh ; Wang, Di Yan ; Li, Shao Sian ; Chen, Hsin An ; Chung, Yi Hsuan ; Lin, Chih Cheng ; Wang, Wei Hua ; Chen, Chun Wei. / Self-encapsulated doping of n-type graphene transistors with extended air stability. In: ACS Nano. 2012 ; Vol. 6, No. 7. pp. 6215-6221.
@article{d7165e8844154e60bc352ad124b7aa13,
title = "Self-encapsulated doping of n-type graphene transistors with extended air stability",
abstract = "This paper presents an innovative approach to fabricating controllable n-type doping graphene transistors with extended air stability by using self-encapsulated doping layers of titanium suboxide (TiOx) thin films, which are an amorphous phase of crystalline TiO 2 and can be solution processed. The nonstoichiometry TiOx thin films consisting of a large number of oxygen vacancies exhibit several unique functions simultaneously in the n-type doping of graphene as an efficient electron-donating agent, an effective dielectric screening medium, and also an encapsulated layer. A novel device structure consisting of both top and bottom coverage of TiOx thin layers on a graphene transistor exhibited strong n-type transport characteristics with its Dirac point shifted up to -80 V and an enhanced electron mobility with doping. Most interestingly, an extended stability of the device without rapid degradation after doping was observed when it was exposed to ambient air for several days, which is not usually observed in other n-type doping methods in graphene. Density functional theory calculations were also employed to explain the observed unique n-type doping characteristics of graphene using TiOx thin films. The technique of using an {"}active{"} encapsulated layer with controllable and substantial electron doping on graphene provides a new route to modulate electronic transport behavior of graphene and has considerable potential for the future development of air-stable and large-area graphene-based nanoelectronics.",
keywords = "air stability, grapheme, n-type doping of graphene and transistor, TiOx",
author = "Ho, {Po Hsun} and Yeh, {Yun Chieh} and Wang, {Di Yan} and Li, {Shao Sian} and Chen, {Hsin An} and Chung, {Yi Hsuan} and Lin, {Chih Cheng} and Wang, {Wei Hua} and Chen, {Chun Wei}",
year = "2012",
month = "7",
day = "24",
doi = "10.1021/nn301639j",
language = "English",
volume = "6",
pages = "6215--6221",
journal = "ACS Nano",
issn = "1936-0851",
publisher = "American Chemical Society",
number = "7",

}

TY - JOUR

T1 - Self-encapsulated doping of n-type graphene transistors with extended air stability

AU - Ho, Po Hsun

AU - Yeh, Yun Chieh

AU - Wang, Di Yan

AU - Li, Shao Sian

AU - Chen, Hsin An

AU - Chung, Yi Hsuan

AU - Lin, Chih Cheng

AU - Wang, Wei Hua

AU - Chen, Chun Wei

PY - 2012/7/24

Y1 - 2012/7/24

N2 - This paper presents an innovative approach to fabricating controllable n-type doping graphene transistors with extended air stability by using self-encapsulated doping layers of titanium suboxide (TiOx) thin films, which are an amorphous phase of crystalline TiO 2 and can be solution processed. The nonstoichiometry TiOx thin films consisting of a large number of oxygen vacancies exhibit several unique functions simultaneously in the n-type doping of graphene as an efficient electron-donating agent, an effective dielectric screening medium, and also an encapsulated layer. A novel device structure consisting of both top and bottom coverage of TiOx thin layers on a graphene transistor exhibited strong n-type transport characteristics with its Dirac point shifted up to -80 V and an enhanced electron mobility with doping. Most interestingly, an extended stability of the device without rapid degradation after doping was observed when it was exposed to ambient air for several days, which is not usually observed in other n-type doping methods in graphene. Density functional theory calculations were also employed to explain the observed unique n-type doping characteristics of graphene using TiOx thin films. The technique of using an "active" encapsulated layer with controllable and substantial electron doping on graphene provides a new route to modulate electronic transport behavior of graphene and has considerable potential for the future development of air-stable and large-area graphene-based nanoelectronics.

AB - This paper presents an innovative approach to fabricating controllable n-type doping graphene transistors with extended air stability by using self-encapsulated doping layers of titanium suboxide (TiOx) thin films, which are an amorphous phase of crystalline TiO 2 and can be solution processed. The nonstoichiometry TiOx thin films consisting of a large number of oxygen vacancies exhibit several unique functions simultaneously in the n-type doping of graphene as an efficient electron-donating agent, an effective dielectric screening medium, and also an encapsulated layer. A novel device structure consisting of both top and bottom coverage of TiOx thin layers on a graphene transistor exhibited strong n-type transport characteristics with its Dirac point shifted up to -80 V and an enhanced electron mobility with doping. Most interestingly, an extended stability of the device without rapid degradation after doping was observed when it was exposed to ambient air for several days, which is not usually observed in other n-type doping methods in graphene. Density functional theory calculations were also employed to explain the observed unique n-type doping characteristics of graphene using TiOx thin films. The technique of using an "active" encapsulated layer with controllable and substantial electron doping on graphene provides a new route to modulate electronic transport behavior of graphene and has considerable potential for the future development of air-stable and large-area graphene-based nanoelectronics.

KW - air stability

KW - grapheme

KW - n-type doping of graphene and transistor

KW - TiOx

UR - http://www.scopus.com/inward/record.url?scp=84864242041&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84864242041&partnerID=8YFLogxK

U2 - 10.1021/nn301639j

DO - 10.1021/nn301639j

M3 - Article

VL - 6

SP - 6215

EP - 6221

JO - ACS Nano

JF - ACS Nano

SN - 1936-0851

IS - 7

ER -