Self-Aligned Deposition Process for Ultrathin Electroless Barriers and Copper Films on Low-k Dielectric Films

G. S. Chen, S. T. Chen, R. F. Louh, T. J. Yang, C. K. Lin

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

A self-aligned, integrated plating technique based on plasma physics and colloidal-related chemistry is proposed to fabricate patterns of ultrathin (≤20 nm) Co-based barriers and copper films in a selective manner on dielectric (HOSP™ and SiO2) films using electroless plating. High-resolution X-ray absorption spectroscopy, transmission electron microscopy, and atomic force microscopy reveal that, once properly pretreated by a gaseous plasma (O2 or H2/N2) and hydrogen peroxide (H2O2) in a basic aqueous solution, the dielectric films can adsorb highly populated metallic (Ni) precipitates of sizes approximately from 2 to 4 nm to catalyze the deposition of electroless Co-based barriers. Finally, the capability of this technique to fabricate "self-aligned" patterns of barrier and copper is demonstrated and the importance of the plasma pretreatment and hydrogen peroxide (in SC-1 solution) is discussed.

Original languageEnglish
JournalElectrochemical and Solid-State Letters
Volume7
Issue number2
DOIs
Publication statusPublished - 2004
Externally publishedYes

Fingerprint

Dielectric films
Copper
hydrogen peroxide
plating
Plasmas
Hydrogen peroxide
copper
Hydrogen Peroxide
X ray absorption spectroscopy
Electroless plating
plasma physics
peroxides
Plating
pretreatment
Precipitates
precipitates
Atomic force microscopy
absorption spectroscopy
Physics
atomic force microscopy

ASJC Scopus subject areas

  • Electrochemistry
  • Materials Science(all)

Cite this

Self-Aligned Deposition Process for Ultrathin Electroless Barriers and Copper Films on Low-k Dielectric Films. / Chen, G. S.; Chen, S. T.; Louh, R. F.; Yang, T. J.; Lin, C. K.

In: Electrochemical and Solid-State Letters, Vol. 7, No. 2, 2004.

Research output: Contribution to journalArticle

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