Quantum dot light-emitting diode using solution-processable graphene oxide as the anode interfacial layer

Di Yan Wang, I. Sheng Wang, I. Sheng Huang, Yun Chieh Yeh, Shao Sian Li, Kun Hua Tu, Chia Chun Chen, Chun Wei Chen

Research output: Contribution to journalArticle

25 Citations (Scopus)

Abstract

In this article, the solution processable graphene oxide (GO) thin film was utilized as the anode interfacial layer in quantum dot light emitting diodes (QD-LEDs). The QD-LED devices (ITO/GO/QDs/TPBi/LiF/Al) were fabricated by employing a layer-by-layer assembled deposition technique with the electrostatic interaction between GO and QDs. The thicknesses of GO thin films and the layer number of CdSe/ZnS QD emissive layers were carefully controlled by spin-casting processes. The GO thin films, which act as the electron blocking and hole transporting layer in the QD-LED devices, have demonstrated the advantage of being compatible with fully solution-processed fabrications of large-area printable optoelectronic devices.

Original languageEnglish
Pages (from-to)10181-10185
Number of pages5
JournalJournal of Physical Chemistry C
Volume116
Issue number18
DOIs
Publication statusPublished - May 10 2012
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Energy(all)
  • Surfaces, Coatings and Films
  • Physical and Theoretical Chemistry

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  • Cite this

    Wang, D. Y., Wang, I. S., Huang, I. S., Yeh, Y. C., Li, S. S., Tu, K. H., Chen, C. C., & Chen, C. W. (2012). Quantum dot light-emitting diode using solution-processable graphene oxide as the anode interfacial layer. Journal of Physical Chemistry C, 116(18), 10181-10185. https://doi.org/10.1021/jp210062x