Prepare dispersed CIS nano-scale particles and spray coating CIS absorber layers using nano-scale precursors

Jian-Chiun Liou, Chien-Chen Diao, Jing-Jenn Lin, Yen-Lin Chen, Cheng-Fu Yang

Research output: Contribution to journalArticle

28 Citations (Scopus)

Abstract

In this study, the Mo-electrode thin films were deposited by a two-stepped process, and the high-purity copper indium selenide-based powder (CuInSe2, CIS) was fabricated by hydrothermal process by Nanowin Technology Co. Ltd. From the X-ray pattern of the CIS precursor, the mainly crystalline phase was CIS, and the almost undetectable CuSe phase was observed. Because the CIS powder was aggregated into micro-scale particles and the average particle sizes were approximately 3 to 8 μm, the CIS power was ground into nano-scale particles, then the 6 wt.% CIS particles were dispersed into isopropyl alcohol to get the solution for spray coating method. Then, 0.1 ml CIS solution was sprayed on the 20 mm × 10 mm Mo/glass substrates, and the heat treatment for the nano-scale CIS solution under various parameters was carried out in a selenization furnace. The annealing temperature was set at 550°C, and the annealing time was changed from 5 to 30 min, without extra Se content was added in the furnace. The influences of annealing time on the densification, crystallization, resistivity (ρ), hall mobility (μ), and carrier concentration of the CIS absorber layers were well investigated in this study.

Original languageEnglish
Pages (from-to)1
JournalNanoscale Research Letters
Volume9
Issue number1
DOIs
Publication statusPublished - Jan 1 2014

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sprayers
coating
absorbers
Annealing
Coatings
Powders
Furnaces
annealing
furnaces
copper indium selenides
Hall mobility
Indium
2-Propanol
Crystallization
Densification
isopropyl alcohol
Carrier concentration
Copper
Alcohols
densification

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Prepare dispersed CIS nano-scale particles and spray coating CIS absorber layers using nano-scale precursors. / Liou, Jian-Chiun; Diao, Chien-Chen; Lin, Jing-Jenn; Chen, Yen-Lin; Yang, Cheng-Fu.

In: Nanoscale Research Letters, Vol. 9, No. 1, 01.01.2014, p. 1.

Research output: Contribution to journalArticle

Liou, Jian-Chiun ; Diao, Chien-Chen ; Lin, Jing-Jenn ; Chen, Yen-Lin ; Yang, Cheng-Fu. / Prepare dispersed CIS nano-scale particles and spray coating CIS absorber layers using nano-scale precursors. In: Nanoscale Research Letters. 2014 ; Vol. 9, No. 1. pp. 1.
@article{6ac3369d18634e2f8972bd026a290c3b,
title = "Prepare dispersed CIS nano-scale particles and spray coating CIS absorber layers using nano-scale precursors",
abstract = "In this study, the Mo-electrode thin films were deposited by a two-stepped process, and the high-purity copper indium selenide-based powder (CuInSe2, CIS) was fabricated by hydrothermal process by Nanowin Technology Co. Ltd. From the X-ray pattern of the CIS precursor, the mainly crystalline phase was CIS, and the almost undetectable CuSe phase was observed. Because the CIS powder was aggregated into micro-scale particles and the average particle sizes were approximately 3 to 8 μm, the CIS power was ground into nano-scale particles, then the 6 wt.{\%} CIS particles were dispersed into isopropyl alcohol to get the solution for spray coating method. Then, 0.1 ml CIS solution was sprayed on the 20 mm × 10 mm Mo/glass substrates, and the heat treatment for the nano-scale CIS solution under various parameters was carried out in a selenization furnace. The annealing temperature was set at 550°C, and the annealing time was changed from 5 to 30 min, without extra Se content was added in the furnace. The influences of annealing time on the densification, crystallization, resistivity (ρ), hall mobility (μ), and carrier concentration of the CIS absorber layers were well investigated in this study.",
author = "Jian-Chiun Liou and Chien-Chen Diao and Jing-Jenn Lin and Yen-Lin Chen and Cheng-Fu Yang",
year = "2014",
month = "1",
day = "1",
doi = "10.1186/1556-276X-9-1",
language = "English",
volume = "9",
pages = "1",
journal = "Nanoscale Research Letters",
issn = "1931-7573",
publisher = "Springer New York",
number = "1",

}

TY - JOUR

T1 - Prepare dispersed CIS nano-scale particles and spray coating CIS absorber layers using nano-scale precursors

AU - Liou, Jian-Chiun

AU - Diao, Chien-Chen

AU - Lin, Jing-Jenn

AU - Chen, Yen-Lin

AU - Yang, Cheng-Fu

PY - 2014/1/1

Y1 - 2014/1/1

N2 - In this study, the Mo-electrode thin films were deposited by a two-stepped process, and the high-purity copper indium selenide-based powder (CuInSe2, CIS) was fabricated by hydrothermal process by Nanowin Technology Co. Ltd. From the X-ray pattern of the CIS precursor, the mainly crystalline phase was CIS, and the almost undetectable CuSe phase was observed. Because the CIS powder was aggregated into micro-scale particles and the average particle sizes were approximately 3 to 8 μm, the CIS power was ground into nano-scale particles, then the 6 wt.% CIS particles were dispersed into isopropyl alcohol to get the solution for spray coating method. Then, 0.1 ml CIS solution was sprayed on the 20 mm × 10 mm Mo/glass substrates, and the heat treatment for the nano-scale CIS solution under various parameters was carried out in a selenization furnace. The annealing temperature was set at 550°C, and the annealing time was changed from 5 to 30 min, without extra Se content was added in the furnace. The influences of annealing time on the densification, crystallization, resistivity (ρ), hall mobility (μ), and carrier concentration of the CIS absorber layers were well investigated in this study.

AB - In this study, the Mo-electrode thin films were deposited by a two-stepped process, and the high-purity copper indium selenide-based powder (CuInSe2, CIS) was fabricated by hydrothermal process by Nanowin Technology Co. Ltd. From the X-ray pattern of the CIS precursor, the mainly crystalline phase was CIS, and the almost undetectable CuSe phase was observed. Because the CIS powder was aggregated into micro-scale particles and the average particle sizes were approximately 3 to 8 μm, the CIS power was ground into nano-scale particles, then the 6 wt.% CIS particles were dispersed into isopropyl alcohol to get the solution for spray coating method. Then, 0.1 ml CIS solution was sprayed on the 20 mm × 10 mm Mo/glass substrates, and the heat treatment for the nano-scale CIS solution under various parameters was carried out in a selenization furnace. The annealing temperature was set at 550°C, and the annealing time was changed from 5 to 30 min, without extra Se content was added in the furnace. The influences of annealing time on the densification, crystallization, resistivity (ρ), hall mobility (μ), and carrier concentration of the CIS absorber layers were well investigated in this study.

U2 - 10.1186/1556-276X-9-1

DO - 10.1186/1556-276X-9-1

M3 - Article

C2 - 24380376

VL - 9

SP - 1

JO - Nanoscale Research Letters

JF - Nanoscale Research Letters

SN - 1931-7573

IS - 1

ER -