Precisely Controlled Ultrastrong Photoinduced Doping at Graphene-Heterostructures Assisted by Trap-State-Mediated Charge Transfer

Po Hsun Ho, Chun Hsiang Chen, Fu Yu Shih, Yih Ren Chang, Shao Sian Li, Wei Hua Wang, Min Chuan Shih, Wei Ting Chen, Ya Ping Chiu, Min Ken Li, Yi Siang Shih, Chun Wei Chen

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26 Citations (Scopus)

Abstract

Ultrastrong and precisely controllable n-type photoinduced doping at a graphene/TiOx heterostructure as a result of trap-state-mediated charge transfer is demonstrated, which is much higher than any other reported photodoping techniques. Based on the strong light-matter interactions at the graphene/TiOx heterostructure, precisely controlled photoinduced bandgap opening of a bilayer graphene device is demonstrated.

Original languageEnglish
Pages (from-to)7809-7815
Number of pages7
JournalAdvanced Materials
Volume27
Issue number47
DOIs
Publication statusPublished - Dec 16 2015
Externally publishedYes

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Keywords

  • band gap opening
  • charge transfer
  • graphene heterostructures
  • ultrastrong photoinduced doping

ASJC Scopus subject areas

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Ho, P. H., Chen, C. H., Shih, F. Y., Chang, Y. R., Li, S. S., Wang, W. H., Shih, M. C., Chen, W. T., Chiu, Y. P., Li, M. K., Shih, Y. S., & Chen, C. W. (2015). Precisely Controlled Ultrastrong Photoinduced Doping at Graphene-Heterostructures Assisted by Trap-State-Mediated Charge Transfer. Advanced Materials, 27(47), 7809-7815. https://doi.org/10.1002/adma.201503592