Precisely Controlled Ultrastrong Photoinduced Doping at Graphene-Heterostructures Assisted by Trap-State-Mediated Charge Transfer

Po Hsun Ho, Chun Hsiang Chen, Fu Yu Shih, Yih Ren Chang, Shao Sian Li, Wei Hua Wang, Min Chuan Shih, Wei Ting Chen, Ya Ping Chiu, Min Ken Li, Yi Siang Shih, Chun Wei Chen

Research output: Contribution to journalArticle

24 Citations (Scopus)

Abstract

Ultrastrong and precisely controllable n-type photoinduced doping at a graphene/TiOx heterostructure as a result of trap-state-mediated charge transfer is demonstrated, which is much higher than any other reported photodoping techniques. Based on the strong light-matter interactions at the graphene/TiOx heterostructure, precisely controlled photoinduced bandgap opening of a bilayer graphene device is demonstrated.

Original languageEnglish
Pages (from-to)7809-7815
Number of pages7
JournalAdvanced Materials
Volume27
Issue number47
DOIs
Publication statusPublished - Dec 16 2015
Externally publishedYes

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Graphene
Heterojunctions
Charge transfer
Doping (additives)
Energy gap
Graphene devices

Keywords

  • band gap opening
  • charge transfer
  • graphene heterostructures
  • ultrastrong photoinduced doping

ASJC Scopus subject areas

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Precisely Controlled Ultrastrong Photoinduced Doping at Graphene-Heterostructures Assisted by Trap-State-Mediated Charge Transfer. / Ho, Po Hsun; Chen, Chun Hsiang; Shih, Fu Yu; Chang, Yih Ren; Li, Shao Sian; Wang, Wei Hua; Shih, Min Chuan; Chen, Wei Ting; Chiu, Ya Ping; Li, Min Ken; Shih, Yi Siang; Chen, Chun Wei.

In: Advanced Materials, Vol. 27, No. 47, 16.12.2015, p. 7809-7815.

Research output: Contribution to journalArticle

Ho, PH, Chen, CH, Shih, FY, Chang, YR, Li, SS, Wang, WH, Shih, MC, Chen, WT, Chiu, YP, Li, MK, Shih, YS & Chen, CW 2015, 'Precisely Controlled Ultrastrong Photoinduced Doping at Graphene-Heterostructures Assisted by Trap-State-Mediated Charge Transfer', Advanced Materials, vol. 27, no. 47, pp. 7809-7815. https://doi.org/10.1002/adma.201503592
Ho, Po Hsun ; Chen, Chun Hsiang ; Shih, Fu Yu ; Chang, Yih Ren ; Li, Shao Sian ; Wang, Wei Hua ; Shih, Min Chuan ; Chen, Wei Ting ; Chiu, Ya Ping ; Li, Min Ken ; Shih, Yi Siang ; Chen, Chun Wei. / Precisely Controlled Ultrastrong Photoinduced Doping at Graphene-Heterostructures Assisted by Trap-State-Mediated Charge Transfer. In: Advanced Materials. 2015 ; Vol. 27, No. 47. pp. 7809-7815.
@article{a1c48b1d113d4872b8785d3f88910dd8,
title = "Precisely Controlled Ultrastrong Photoinduced Doping at Graphene-Heterostructures Assisted by Trap-State-Mediated Charge Transfer",
abstract = "Ultrastrong and precisely controllable n-type photoinduced doping at a graphene/TiOx heterostructure as a result of trap-state-mediated charge transfer is demonstrated, which is much higher than any other reported photodoping techniques. Based on the strong light-matter interactions at the graphene/TiOx heterostructure, precisely controlled photoinduced bandgap opening of a bilayer graphene device is demonstrated.",
keywords = "band gap opening, charge transfer, graphene heterostructures, ultrastrong photoinduced doping",
author = "Ho, {Po Hsun} and Chen, {Chun Hsiang} and Shih, {Fu Yu} and Chang, {Yih Ren} and Li, {Shao Sian} and Wang, {Wei Hua} and Shih, {Min Chuan} and Chen, {Wei Ting} and Chiu, {Ya Ping} and Li, {Min Ken} and Shih, {Yi Siang} and Chen, {Chun Wei}",
year = "2015",
month = "12",
day = "16",
doi = "10.1002/adma.201503592",
language = "English",
volume = "27",
pages = "7809--7815",
journal = "Advanced Materials",
issn = "0935-9648",
publisher = "Wiley-VCH Verlag",
number = "47",

}

TY - JOUR

T1 - Precisely Controlled Ultrastrong Photoinduced Doping at Graphene-Heterostructures Assisted by Trap-State-Mediated Charge Transfer

AU - Ho, Po Hsun

AU - Chen, Chun Hsiang

AU - Shih, Fu Yu

AU - Chang, Yih Ren

AU - Li, Shao Sian

AU - Wang, Wei Hua

AU - Shih, Min Chuan

AU - Chen, Wei Ting

AU - Chiu, Ya Ping

AU - Li, Min Ken

AU - Shih, Yi Siang

AU - Chen, Chun Wei

PY - 2015/12/16

Y1 - 2015/12/16

N2 - Ultrastrong and precisely controllable n-type photoinduced doping at a graphene/TiOx heterostructure as a result of trap-state-mediated charge transfer is demonstrated, which is much higher than any other reported photodoping techniques. Based on the strong light-matter interactions at the graphene/TiOx heterostructure, precisely controlled photoinduced bandgap opening of a bilayer graphene device is demonstrated.

AB - Ultrastrong and precisely controllable n-type photoinduced doping at a graphene/TiOx heterostructure as a result of trap-state-mediated charge transfer is demonstrated, which is much higher than any other reported photodoping techniques. Based on the strong light-matter interactions at the graphene/TiOx heterostructure, precisely controlled photoinduced bandgap opening of a bilayer graphene device is demonstrated.

KW - band gap opening

KW - charge transfer

KW - graphene heterostructures

KW - ultrastrong photoinduced doping

UR - http://www.scopus.com/inward/record.url?scp=84954357392&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84954357392&partnerID=8YFLogxK

U2 - 10.1002/adma.201503592

DO - 10.1002/adma.201503592

M3 - Article

AN - SCOPUS:84954357392

VL - 27

SP - 7809

EP - 7815

JO - Advanced Materials

JF - Advanced Materials

SN - 0935-9648

IS - 47

ER -