High thin film is a candidate material for the charge storage layer of non-volatile flash memory. This material can achieve faster programming speeds and better charge-retention performance. This paper reports the fabrication of a CoxHfySizO high thin film formed by using a sol-gel technique and low-temperature annealing. The proposed fabrication method involves using oxygen plasma treatment to passivate the surface of the high film and maintain low-temperature formation with high quality. The X-ray analysis presented in this study showed that the CoxHfySizO high film formed metal-rich cobalt and hafnium silicate after oxygen plasma treatment, thus improving the performance of the CoxHfySizO high memory by creating more trapping sites. This plasma treatment also improves the memory window from 1.92 to 2.16 V. The retention can decrease to 13% at a 106 s measurement, and the memory narrowing for the plasma-treated CoxHfySizO high memory is 21% after 106 program and erase cycles. The sol-gel method resulting CoxHfySizO highflash memories show that oxygen plasma treatment improves the memory performance in retention and endurance.
|Number of pages||8|
|Journal||International Journal of Electrochemical Science|
|Publication status||Published - 2013|
- Flash memory
- Plasma treatment
ASJC Scopus subject areas