Phase transformation of tungsten films deposited by diode and inductively coupled plasma magnetron sputtering

G. S. Chen, H. S. Tian, C. K. Lin, Gin Shiang Chen, H. Y. Lee

Research output: Contribution to journalArticle

13 Citations (Scopus)

Abstract

The phase transition behavior of tungsten thin films deposited using diode and inductively coupled plasma (ICP) magnetron sputtering was studied. The grazing incidence x-ray diffraction (GIXRD), scanning electron microscopy and transition electron microscopy were used to study the effects of various deposition parameters on the transition of the film's phase. It was found that films deposited by diode sputtering were mainly dominated by β-W, which yielded electrical resistivity ranging from ∼50 to ∼190 μω. On the other hand, the ICP sputtering was capable of depositing α-W films with resistivity of only ∼20 μω using adequate substrate bias.

Original languageEnglish
Pages (from-to)281-286
Number of pages6
JournalJournal of Vacuum Science and Technology, Part A: Vacuum, Surfaces and Films
Volume22
Issue number2
DOIs
Publication statusPublished - Mar 2004
Externally publishedYes

    Fingerprint

ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Surfaces and Interfaces
  • Physics and Astronomy (miscellaneous)

Cite this