The phase transition behavior of tungsten thin films deposited using diode and inductively coupled plasma (ICP) magnetron sputtering was studied. The grazing incidence x-ray diffraction (GIXRD), scanning electron microscopy and transition electron microscopy were used to study the effects of various deposition parameters on the transition of the film's phase. It was found that films deposited by diode sputtering were mainly dominated by β-W, which yielded electrical resistivity ranging from ∼50 to ∼190 μω. On the other hand, the ICP sputtering was capable of depositing α-W films with resistivity of only ∼20 μω using adequate substrate bias.
|Number of pages||6|
|Journal||Journal of Vacuum Science and Technology, Part A: Vacuum, Surfaces and Films|
|Publication status||Published - Mar 2004|
ASJC Scopus subject areas
- Surfaces, Coatings and Films
- Surfaces and Interfaces
- Physics and Astronomy (miscellaneous)