Performance of sol-gel deposited Zn1 - xMgxO films used as active channel layer for thin-film transistors

Chien Yie Tsay, Hua Chi Cheng, Min Chi Wang, Pee Yew Lee, Chia Fu Chen, Chung Kwei Lin

Research output: Contribution to journalArticle

33 Citations (Scopus)

Abstract

ZnO thin-film transistors (TFTs) have attracted considerable R&D interest due to their high transparency and low photosensitivity compared with typical a-Si:H TFTs. The electrical characteristics of ZnO thin films may be controlled by doping with ternary element, for instance Al, Ga, In, Mg, Zr, etc. In this study, Zn1 - xMgxO (x = 0 to 0.36) thin films were deposited on glass substrates by spin coating. The as-deposited films were baked at 300 °C for 10 min and then annealed at 500 °C for 1 h in air. The results show that, addition of Mg-species in ZnO films markedly enhanced the uniformity of film thickness and improved optical properties. The Zn0.8Mg0.2O film exhibited the best transparency of 92%, an increase of ∼ 15% over a pure ZnO film, and the rms roughness value decreased to 1.63. The Zn1 - xMgxO TFTs were demonstrated to have n-type enhancement behavior. The optimum device with Zn0.8Mg0.2O channel layer had a field-effect mobility of 0.1 cm2/V s, a threshold voltage of 6.0 V, and an on/off ratio more than 107.

Original languageEnglish
Pages (from-to)1323-1328
Number of pages6
JournalSurface and Coatings Technology
Volume202
Issue number4-7
DOIs
Publication statusPublished - Dec 15 2007
Externally publishedYes

Fingerprint

Thin film transistors
Sol-gels
transistors
gels
thin films
Transparency
Thin films
Photosensitivity
Spin coating
Threshold voltage
Chemical elements
photosensitivity
Film thickness
Optical properties
Surface roughness
threshold voltage
Doping (additives)
coating
film thickness
Glass

Keywords

  • Sol-gel method
  • Thin-film transistors
  • ZnMgO films

ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Condensed Matter Physics
  • Surfaces and Interfaces

Cite this

Performance of sol-gel deposited Zn1 - xMgxO films used as active channel layer for thin-film transistors. / Tsay, Chien Yie; Cheng, Hua Chi; Wang, Min Chi; Lee, Pee Yew; Chen, Chia Fu; Lin, Chung Kwei.

In: Surface and Coatings Technology, Vol. 202, No. 4-7, 15.12.2007, p. 1323-1328.

Research output: Contribution to journalArticle

Tsay, Chien Yie ; Cheng, Hua Chi ; Wang, Min Chi ; Lee, Pee Yew ; Chen, Chia Fu ; Lin, Chung Kwei. / Performance of sol-gel deposited Zn1 - xMgxO films used as active channel layer for thin-film transistors. In: Surface and Coatings Technology. 2007 ; Vol. 202, No. 4-7. pp. 1323-1328.
@article{da7cd02f1e6a4daa9f013ee64bbb24be,
title = "Performance of sol-gel deposited Zn1 - xMgxO films used as active channel layer for thin-film transistors",
abstract = "ZnO thin-film transistors (TFTs) have attracted considerable R&D interest due to their high transparency and low photosensitivity compared with typical a-Si:H TFTs. The electrical characteristics of ZnO thin films may be controlled by doping with ternary element, for instance Al, Ga, In, Mg, Zr, etc. In this study, Zn1 - xMgxO (x = 0 to 0.36) thin films were deposited on glass substrates by spin coating. The as-deposited films were baked at 300 °C for 10 min and then annealed at 500 °C for 1 h in air. The results show that, addition of Mg-species in ZnO films markedly enhanced the uniformity of film thickness and improved optical properties. The Zn0.8Mg0.2O film exhibited the best transparency of 92{\%}, an increase of ∼ 15{\%} over a pure ZnO film, and the rms roughness value decreased to 1.63. The Zn1 - xMgxO TFTs were demonstrated to have n-type enhancement behavior. The optimum device with Zn0.8Mg0.2O channel layer had a field-effect mobility of 0.1 cm2/V s, a threshold voltage of 6.0 V, and an on/off ratio more than 107.",
keywords = "Sol-gel method, Thin-film transistors, ZnMgO films",
author = "Tsay, {Chien Yie} and Cheng, {Hua Chi} and Wang, {Min Chi} and Lee, {Pee Yew} and Chen, {Chia Fu} and Lin, {Chung Kwei}",
year = "2007",
month = "12",
day = "15",
doi = "10.1016/j.surfcoat.2007.07.080",
language = "English",
volume = "202",
pages = "1323--1328",
journal = "Surface and Coatings Technology",
issn = "0257-8972",
publisher = "Elsevier",
number = "4-7",

}

TY - JOUR

T1 - Performance of sol-gel deposited Zn1 - xMgxO films used as active channel layer for thin-film transistors

AU - Tsay, Chien Yie

AU - Cheng, Hua Chi

AU - Wang, Min Chi

AU - Lee, Pee Yew

AU - Chen, Chia Fu

AU - Lin, Chung Kwei

PY - 2007/12/15

Y1 - 2007/12/15

N2 - ZnO thin-film transistors (TFTs) have attracted considerable R&D interest due to their high transparency and low photosensitivity compared with typical a-Si:H TFTs. The electrical characteristics of ZnO thin films may be controlled by doping with ternary element, for instance Al, Ga, In, Mg, Zr, etc. In this study, Zn1 - xMgxO (x = 0 to 0.36) thin films were deposited on glass substrates by spin coating. The as-deposited films were baked at 300 °C for 10 min and then annealed at 500 °C for 1 h in air. The results show that, addition of Mg-species in ZnO films markedly enhanced the uniformity of film thickness and improved optical properties. The Zn0.8Mg0.2O film exhibited the best transparency of 92%, an increase of ∼ 15% over a pure ZnO film, and the rms roughness value decreased to 1.63. The Zn1 - xMgxO TFTs were demonstrated to have n-type enhancement behavior. The optimum device with Zn0.8Mg0.2O channel layer had a field-effect mobility of 0.1 cm2/V s, a threshold voltage of 6.0 V, and an on/off ratio more than 107.

AB - ZnO thin-film transistors (TFTs) have attracted considerable R&D interest due to their high transparency and low photosensitivity compared with typical a-Si:H TFTs. The electrical characteristics of ZnO thin films may be controlled by doping with ternary element, for instance Al, Ga, In, Mg, Zr, etc. In this study, Zn1 - xMgxO (x = 0 to 0.36) thin films were deposited on glass substrates by spin coating. The as-deposited films were baked at 300 °C for 10 min and then annealed at 500 °C for 1 h in air. The results show that, addition of Mg-species in ZnO films markedly enhanced the uniformity of film thickness and improved optical properties. The Zn0.8Mg0.2O film exhibited the best transparency of 92%, an increase of ∼ 15% over a pure ZnO film, and the rms roughness value decreased to 1.63. The Zn1 - xMgxO TFTs were demonstrated to have n-type enhancement behavior. The optimum device with Zn0.8Mg0.2O channel layer had a field-effect mobility of 0.1 cm2/V s, a threshold voltage of 6.0 V, and an on/off ratio more than 107.

KW - Sol-gel method

KW - Thin-film transistors

KW - ZnMgO films

UR - http://www.scopus.com/inward/record.url?scp=36049003065&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=36049003065&partnerID=8YFLogxK

U2 - 10.1016/j.surfcoat.2007.07.080

DO - 10.1016/j.surfcoat.2007.07.080

M3 - Article

AN - SCOPUS:36049003065

VL - 202

SP - 1323

EP - 1328

JO - Surface and Coatings Technology

JF - Surface and Coatings Technology

SN - 0257-8972

IS - 4-7

ER -