Performance of low resistivity electrode prepared by electroless plated for amorphous silicon thin-film transistors

Chien Yie Tsay, Chung Kwei Lin, Hong Ming Lin, Shih Chieh Chang, Bor Chuan Chung

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

The TFTs array fabrication process for large-area TFT-LCD has been continuously developed for simplifying processing steps, improving performance and reducing cost in the process of mass production. In this study, the hydrogenated amorphous silicon (a-Si:H) TFTs with low resistivity electrodes, silver thin films, were prepared by using the selective deposition method that combined lift-off and electroless plated processes. This developed process can direct pattern the electrode of transistor devices without the etching process and provide ease processing steps. The as-deposited Ag films were annealed at 200 ° for 10 minutes under N2 atmosphere. The results shows that the adhesion properties can be enhanced and the resistivity has been improved from 6.0 μΩ-cm, significantly decrease by 35%, of as-deposited Ag films by annealed. The thickness of Ag thin film is about 100 nm and the r. m. s roughness value is 1.54 nm. The a-Si:H TFT with Ag thin films as source and drain electrodes had a field effect mobility of 0.18 cm2/Vs, a threshold voltage of 2.65 V, and an on/off ratio of 3×104.

Original languageEnglish
Pages (from-to)1165-1168
Number of pages4
JournalMaterials Science Forum
Volume561-565
Issue numberPART 2
Publication statusPublished - 2007
Externally publishedYes
Event6th Pacific Rim International Conference on Advanced Materials and Processing, PRICM 6 - Jeju, Korea, Republic of
Duration: Nov 5 2007Nov 9 2007

Fingerprint

Thin film transistors
Amorphous silicon
amorphous silicon
transistors
Thin films
Electrodes
electrical resistivity
electrodes
thin films
Processing
Liquid crystal displays
Threshold voltage
Silver
threshold voltage
Etching
Transistors
adhesion
roughness
Adhesion
Surface roughness

Keywords

  • Electroless plated
  • Silver electrode
  • Thin-film transistors

ASJC Scopus subject areas

  • Materials Science(all)

Cite this

Performance of low resistivity electrode prepared by electroless plated for amorphous silicon thin-film transistors. / Tsay, Chien Yie; Lin, Chung Kwei; Lin, Hong Ming; Chang, Shih Chieh; Chung, Bor Chuan.

In: Materials Science Forum, Vol. 561-565, No. PART 2, 2007, p. 1165-1168.

Research output: Contribution to journalArticle

Tsay, Chien Yie ; Lin, Chung Kwei ; Lin, Hong Ming ; Chang, Shih Chieh ; Chung, Bor Chuan. / Performance of low resistivity electrode prepared by electroless plated for amorphous silicon thin-film transistors. In: Materials Science Forum. 2007 ; Vol. 561-565, No. PART 2. pp. 1165-1168.
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