P16INK4a detection using an ultra-sensitive silicon nanowire field effect transistor

Jia Yang Hung, Yankuba B. Manga, Yu Ju Chen, Haw Ming Huang, Wen Luh Yang, Chi Chang Wu

Research output: Chapter in Book/Report/Conference proceedingChapter

Abstract

In general, if cancer can be earlier detected and treated, the chance of recovery is relatively much higher. Among all advanced molecular diagnostic techniques, silicon nanowire field effect transistor sensors have proven to have extremely high sensitivity and specificity. Through side-wall spacer etch technique which possesses simpler and cheaper process steps to manufacture polycrystalline silicon nanowire field effect transistor sensor. And p16INK4a protein which is related to cervical cancer, is taken as the target of detection. When human is infected with high-risk HPV, p16INK4a protein will be overexpressed. Therefore, we can know the extent of HPV infection by detecting p16INK4a protein, and then assess whether there is the risk of cervical cancer.

Original languageEnglish
Title of host publicationProceedings - 2018 7th International Symposium on Next-Generation Electronics, ISNE 2018
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages1-2
Number of pages2
ISBN (Electronic)9781538614457
ISBN (Print)9781538614457
DOIs
Publication statusPublished - Jun 22 2018
Event7th International Symposium on Next-Generation Electronics, ISNE 2018 - Taipei, Taiwan
Duration: May 7 2018May 9 2018

Publication series

NameProceedings - 2018 7th International Symposium on Next-Generation Electronics, ISNE 2018

Other

Other7th International Symposium on Next-Generation Electronics, ISNE 2018
CountryTaiwan
CityTaipei
Period5/7/185/9/18

    Fingerprint

Keywords

  • Biosensor
  • Early diagnosis
  • p16 protein
  • Poly-SiNW Field Effect Transistor
  • Side-wall spacer

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Instrumentation

Cite this

Hung, J. Y., Manga, Y. B., Chen, Y. J., Huang, H. M., Yang, W. L., & Wu, C. C. (2018). P16INK4a detection using an ultra-sensitive silicon nanowire field effect transistor. In Proceedings - 2018 7th International Symposium on Next-Generation Electronics, ISNE 2018 (pp. 1-2). (Proceedings - 2018 7th International Symposium on Next-Generation Electronics, ISNE 2018). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ISNE.2018.8394715