On the characteristics of AlGaN films grown on (111) and (001) Si substrates

Cheng Liang Wang, Jyh Rong Gong, Wei Tsai Liao, Wei L. Wang, Tai Yuan Lin, Chung Kwei Lin

Research output: Contribution to journal › Article

2 Citations (Scopus)

Abstract

High Al-content AlxGa1-xN films were deposited on (001) and (111) Si substrates at 1000°C using high temperature AlN buffer layers. Experimental results show that AlxGa1-xN films grown on (111) Si substrates exhibit better crystalline quality than that in the films deposited on (001) Si substrates. Cracks were found in the high Al-content AlxGa1-xN/(111) Si samples but they were not observed in the AlxGa1-xN films grown on (001) Si substrates having the same film thicknesses and Al compositions. Based upon the results of X-ray diffraction (XRD) and transmission electron microscopy (TEM), it appears that mono-crystalline AlxGa1-xN films were achieved on (111) Si substrates while columnar structure was observed in the AlxGa1-xN/(001) Si samples. According to the depth profiles of AlxGa1-xN/Si samples using secondary ion mass spectroscopic (SIMS) analyses, enhanced Al inter-diffusion in the Al xGa1-xN/(001) Si samples was identified. Room temperature (RT) photoluminescence (PL) measurements of the AlxGa1-xN (x≦0.10)/(111) Si samples exhibit strong near band edge luminescence. The PL emission linewidth was found to decrease with the decrement of Al-content.

Original languageEnglish
Pages (from-to)63-66
Number of pages4
JournalSolid State Communications
Volume137
Issue number1-2
DOIs
Publication statusPublished - Jan 2006
Externally publishedYes

Fingerprint

Substrates
Photoluminescence
Crystalline materials
photoluminescence
Buffer layers
Linewidth
Film thickness
Luminescence
film thickness
cracks
buffers
aluminum gallium nitride
Ions
luminescence
Transmission electron microscopy
Cracks
X ray diffraction
Temperature
transmission electron microscopy
room temperature

Keywords

  • A. AlGaN/Si
  • B. OMVPE
  • D. OM and TEM
  • D. Photoluminescence

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics

Cite this

On the characteristics of AlGaN films grown on (111) and (001) Si substrates. / Wang, Cheng Liang; Gong, Jyh Rong; Liao, Wei Tsai; Wang, Wei L.; Lin, Tai Yuan; Lin, Chung Kwei.

In: Solid State Communications, Vol. 137, No. 1-2, 01.2006, p. 63-66.

Research output: Contribution to journal › Article

Wang, CL, Gong, JR, Liao, WT, Wang, WL, Lin, TY & Lin, CK 2006, 'On the characteristics of AlGaN films grown on (111) and (001) Si substrates', Solid State Communications, vol. 137, no. 1-2, pp. 63-66. https://doi.org/10.1016/j.ssc.2005.10.008
Wang CL, Gong JR, Liao WT, Wang WL, Lin TY, Lin CK. On the characteristics of AlGaN films grown on (111) and (001) Si substrates. Solid State Communications. 2006 Jan;137(1-2):63-66. https://doi.org/10.1016/j.ssc.2005.10.008
Wang, Cheng Liang ; Gong, Jyh Rong ; Liao, Wei Tsai ; Wang, Wei L. ; Lin, Tai Yuan ; Lin, Chung Kwei. / On the characteristics of AlGaN films grown on (111) and (001) Si substrates. In: Solid State Communications. 2006 ; Vol. 137, No. 1-2. pp. 63-66.
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AU - Lin, Tai Yuan

AU - Lin, Chung Kwei

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N2 - High Al-content AlxGa1-xN films were deposited on (001) and (111) Si substrates at 1000°C using high temperature AlN buffer layers. Experimental results show that AlxGa1-xN films grown on (111) Si substrates exhibit better crystalline quality than that in the films deposited on (001) Si substrates. Cracks were found in the high Al-content AlxGa1-xN/(111) Si samples but they were not observed in the AlxGa1-xN films grown on (001) Si substrates having the same film thicknesses and Al compositions. Based upon the results of X-ray diffraction (XRD) and transmission electron microscopy (TEM), it appears that mono-crystalline AlxGa1-xN films were achieved on (111) Si substrates while columnar structure was observed in the AlxGa1-xN/(001) Si samples. According to the depth profiles of AlxGa1-xN/Si samples using secondary ion mass spectroscopic (SIMS) analyses, enhanced Al inter-diffusion in the Al xGa1-xN/(001) Si samples was identified. Room temperature (RT) photoluminescence (PL) measurements of the AlxGa1-xN (x≦0.10)/(111) Si samples exhibit strong near band edge luminescence. The PL emission linewidth was found to decrease with the decrement of Al-content.

AB - High Al-content AlxGa1-xN films were deposited on (001) and (111) Si substrates at 1000°C using high temperature AlN buffer layers. Experimental results show that AlxGa1-xN films grown on (111) Si substrates exhibit better crystalline quality than that in the films deposited on (001) Si substrates. Cracks were found in the high Al-content AlxGa1-xN/(111) Si samples but they were not observed in the AlxGa1-xN films grown on (001) Si substrates having the same film thicknesses and Al compositions. Based upon the results of X-ray diffraction (XRD) and transmission electron microscopy (TEM), it appears that mono-crystalline AlxGa1-xN films were achieved on (111) Si substrates while columnar structure was observed in the AlxGa1-xN/(001) Si samples. According to the depth profiles of AlxGa1-xN/Si samples using secondary ion mass spectroscopic (SIMS) analyses, enhanced Al inter-diffusion in the Al xGa1-xN/(001) Si samples was identified. Room temperature (RT) photoluminescence (PL) measurements of the AlxGa1-xN (x≦0.10)/(111) Si samples exhibit strong near band edge luminescence. The PL emission linewidth was found to decrease with the decrement of Al-content.

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