On the characteristics of AlGaN films grown on (111) and (001) Si substrates

Cheng Liang Wang; Jyh Rong Gong; Wei Tsai Liao; Wei L. Wang; Tai Yuan Lin; Chung Kwei Lin

doi:10.1016/j.ssc.2005.10.008

On the characteristics of AlGaN films grown on (111) and (001) Si substrates

Cheng Liang Wang, Jyh Rong Gong, Wei Tsai Liao, Wei L. Wang, Tai Yuan Lin, Chung Kwei Lin

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

High Al-content Al_xGa_1-xN films were deposited on (001) and (111) Si substrates at 1000°C using high temperature AlN buffer layers. Experimental results show that Al_xGa_1-xN films grown on (111) Si substrates exhibit better crystalline quality than that in the films deposited on (001) Si substrates. Cracks were found in the high Al-content Al_xGa_1-xN/(111) Si samples but they were not observed in the Al_xGa_1-xN films grown on (001) Si substrates having the same film thicknesses and Al compositions. Based upon the results of X-ray diffraction (XRD) and transmission electron microscopy (TEM), it appears that mono-crystalline Al_xGa_1-xN films were achieved on (111) Si substrates while columnar structure was observed in the Al_xGa_1-xN/(001) Si samples. According to the depth profiles of Al_xGa_1-xN/Si samples using secondary ion mass spectroscopic (SIMS) analyses, enhanced Al inter-diffusion in the Al _xGa_1-xN/(001) Si samples was identified. Room temperature (RT) photoluminescence (PL) measurements of the Al_xGa_1-xN (x≦0.10)/(111) Si samples exhibit strong near band edge luminescence. The PL emission linewidth was found to decrease with the decrement of Al-content.

Original language	English
Pages (from-to)	63-66
Number of pages	4
Journal	Solid State Communications
Volume	137
Issue number	1-2
DOIs	https://doi.org/10.1016/j.ssc.2005.10.008
Publication status	Published - Jan 2006
Externally published	Yes

Keywords

A. AlGaN/Si
B. OMVPE
D. OM and TEM
D. Photoluminescence

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics

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title = "On the characteristics of AlGaN films grown on (111) and (001) Si substrates",

abstract = "High Al-content AlxGa1-xN films were deposited on (001) and (111) Si substrates at 1000°C using high temperature AlN buffer layers. Experimental results show that AlxGa1-xN films grown on (111) Si substrates exhibit better crystalline quality than that in the films deposited on (001) Si substrates. Cracks were found in the high Al-content AlxGa1-xN/(111) Si samples but they were not observed in the AlxGa1-xN films grown on (001) Si substrates having the same film thicknesses and Al compositions. Based upon the results of X-ray diffraction (XRD) and transmission electron microscopy (TEM), it appears that mono-crystalline AlxGa1-xN films were achieved on (111) Si substrates while columnar structure was observed in the AlxGa1-xN/(001) Si samples. According to the depth profiles of AlxGa1-xN/Si samples using secondary ion mass spectroscopic (SIMS) analyses, enhanced Al inter-diffusion in the Al xGa1-xN/(001) Si samples was identified. Room temperature (RT) photoluminescence (PL) measurements of the AlxGa1-xN (x≦0.10)/(111) Si samples exhibit strong near band edge luminescence. The PL emission linewidth was found to decrease with the decrement of Al-content.",

keywords = "A. AlGaN/Si, B. OMVPE, D. OM and TEM, D. Photoluminescence",

author = "Wang, {Cheng Liang} and Gong, {Jyh Rong} and Liao, {Wei Tsai} and Wang, {Wei L.} and Lin, {Tai Yuan} and Lin, {Chung Kwei}",

year = "2006",

month = jan,

doi = "10.1016/j.ssc.2005.10.008",

language = "English",

volume = "137",

pages = "63--66",

journal = "Solid State Communications",

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number = "1-2",

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T1 - On the characteristics of AlGaN films grown on (111) and (001) Si substrates

AU - Wang, Cheng Liang

AU - Gong, Jyh Rong

AU - Liao, Wei Tsai

AU - Wang, Wei L.

AU - Lin, Tai Yuan

AU - Lin, Chung Kwei

PY - 2006/1

Y1 - 2006/1

N2 - High Al-content AlxGa1-xN films were deposited on (001) and (111) Si substrates at 1000°C using high temperature AlN buffer layers. Experimental results show that AlxGa1-xN films grown on (111) Si substrates exhibit better crystalline quality than that in the films deposited on (001) Si substrates. Cracks were found in the high Al-content AlxGa1-xN/(111) Si samples but they were not observed in the AlxGa1-xN films grown on (001) Si substrates having the same film thicknesses and Al compositions. Based upon the results of X-ray diffraction (XRD) and transmission electron microscopy (TEM), it appears that mono-crystalline AlxGa1-xN films were achieved on (111) Si substrates while columnar structure was observed in the AlxGa1-xN/(001) Si samples. According to the depth profiles of AlxGa1-xN/Si samples using secondary ion mass spectroscopic (SIMS) analyses, enhanced Al inter-diffusion in the Al xGa1-xN/(001) Si samples was identified. Room temperature (RT) photoluminescence (PL) measurements of the AlxGa1-xN (x≦0.10)/(111) Si samples exhibit strong near band edge luminescence. The PL emission linewidth was found to decrease with the decrement of Al-content.

AB - High Al-content AlxGa1-xN films were deposited on (001) and (111) Si substrates at 1000°C using high temperature AlN buffer layers. Experimental results show that AlxGa1-xN films grown on (111) Si substrates exhibit better crystalline quality than that in the films deposited on (001) Si substrates. Cracks were found in the high Al-content AlxGa1-xN/(111) Si samples but they were not observed in the AlxGa1-xN films grown on (001) Si substrates having the same film thicknesses and Al compositions. Based upon the results of X-ray diffraction (XRD) and transmission electron microscopy (TEM), it appears that mono-crystalline AlxGa1-xN films were achieved on (111) Si substrates while columnar structure was observed in the AlxGa1-xN/(001) Si samples. According to the depth profiles of AlxGa1-xN/Si samples using secondary ion mass spectroscopic (SIMS) analyses, enhanced Al inter-diffusion in the Al xGa1-xN/(001) Si samples was identified. Room temperature (RT) photoluminescence (PL) measurements of the AlxGa1-xN (x≦0.10)/(111) Si samples exhibit strong near band edge luminescence. The PL emission linewidth was found to decrease with the decrement of Al-content.

KW - A. AlGaN/Si

KW - B. OMVPE

KW - D. OM and TEM

KW - D. Photoluminescence

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