Abstract
High Al-content AlxGa1-xN films were deposited on (001) and (111) Si substrates at 1000°C using high temperature AlN buffer layers. Experimental results show that AlxGa1-xN films grown on (111) Si substrates exhibit better crystalline quality than that in the films deposited on (001) Si substrates. Cracks were found in the high Al-content AlxGa1-xN/(111) Si samples but they were not observed in the AlxGa1-xN films grown on (001) Si substrates having the same film thicknesses and Al compositions. Based upon the results of X-ray diffraction (XRD) and transmission electron microscopy (TEM), it appears that mono-crystalline AlxGa1-xN films were achieved on (111) Si substrates while columnar structure was observed in the AlxGa1-xN/(001) Si samples. According to the depth profiles of AlxGa1-xN/Si samples using secondary ion mass spectroscopic (SIMS) analyses, enhanced Al inter-diffusion in the Al xGa1-xN/(001) Si samples was identified. Room temperature (RT) photoluminescence (PL) measurements of the AlxGa1-xN (x≦0.10)/(111) Si samples exhibit strong near band edge luminescence. The PL emission linewidth was found to decrease with the decrement of Al-content.
Original language | English |
---|---|
Pages (from-to) | 63-66 |
Number of pages | 4 |
Journal | Solid State Communications |
Volume | 137 |
Issue number | 1-2 |
DOIs | |
Publication status | Published - Jan 2006 |
Externally published | Yes |
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Keywords
- A. AlGaN/Si
- B. OMVPE
- D. OM and TEM
- D. Photoluminescence
ASJC Scopus subject areas
- Materials Science(all)
- Condensed Matter Physics
Cite this
On the characteristics of AlGaN films grown on (111) and (001) Si substrates. / Wang, Cheng Liang; Gong, Jyh Rong; Liao, Wei Tsai; Wang, Wei L.; Lin, Tai Yuan; Lin, Chung Kwei.
In: Solid State Communications, Vol. 137, No. 1-2, 01.2006, p. 63-66.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - On the characteristics of AlGaN films grown on (111) and (001) Si substrates
AU - Wang, Cheng Liang
AU - Gong, Jyh Rong
AU - Liao, Wei Tsai
AU - Wang, Wei L.
AU - Lin, Tai Yuan
AU - Lin, Chung Kwei
PY - 2006/1
Y1 - 2006/1
N2 - High Al-content AlxGa1-xN films were deposited on (001) and (111) Si substrates at 1000°C using high temperature AlN buffer layers. Experimental results show that AlxGa1-xN films grown on (111) Si substrates exhibit better crystalline quality than that in the films deposited on (001) Si substrates. Cracks were found in the high Al-content AlxGa1-xN/(111) Si samples but they were not observed in the AlxGa1-xN films grown on (001) Si substrates having the same film thicknesses and Al compositions. Based upon the results of X-ray diffraction (XRD) and transmission electron microscopy (TEM), it appears that mono-crystalline AlxGa1-xN films were achieved on (111) Si substrates while columnar structure was observed in the AlxGa1-xN/(001) Si samples. According to the depth profiles of AlxGa1-xN/Si samples using secondary ion mass spectroscopic (SIMS) analyses, enhanced Al inter-diffusion in the Al xGa1-xN/(001) Si samples was identified. Room temperature (RT) photoluminescence (PL) measurements of the AlxGa1-xN (x≦0.10)/(111) Si samples exhibit strong near band edge luminescence. The PL emission linewidth was found to decrease with the decrement of Al-content.
AB - High Al-content AlxGa1-xN films were deposited on (001) and (111) Si substrates at 1000°C using high temperature AlN buffer layers. Experimental results show that AlxGa1-xN films grown on (111) Si substrates exhibit better crystalline quality than that in the films deposited on (001) Si substrates. Cracks were found in the high Al-content AlxGa1-xN/(111) Si samples but they were not observed in the AlxGa1-xN films grown on (001) Si substrates having the same film thicknesses and Al compositions. Based upon the results of X-ray diffraction (XRD) and transmission electron microscopy (TEM), it appears that mono-crystalline AlxGa1-xN films were achieved on (111) Si substrates while columnar structure was observed in the AlxGa1-xN/(001) Si samples. According to the depth profiles of AlxGa1-xN/Si samples using secondary ion mass spectroscopic (SIMS) analyses, enhanced Al inter-diffusion in the Al xGa1-xN/(001) Si samples was identified. Room temperature (RT) photoluminescence (PL) measurements of the AlxGa1-xN (x≦0.10)/(111) Si samples exhibit strong near band edge luminescence. The PL emission linewidth was found to decrease with the decrement of Al-content.
KW - A. AlGaN/Si
KW - B. OMVPE
KW - D. OM and TEM
KW - D. Photoluminescence
UR - http://www.scopus.com/inward/record.url?scp=28844475158&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=28844475158&partnerID=8YFLogxK
U2 - 10.1016/j.ssc.2005.10.008
DO - 10.1016/j.ssc.2005.10.008
M3 - Article
AN - SCOPUS:28844475158
VL - 137
SP - 63
EP - 66
JO - Solid State Communications
JF - Solid State Communications
SN - 0038-1098
IS - 1-2
ER -