Novel sol-gel derived SONOS-type nanocrystal memory

Chi Chang Wu, Hsin Chiang You, Fu Hsiang Ko, Wen Luh Yang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A nanocrystal (NC) memory by sol-gel spin-coating method was demonstrated. The high-density and isolated NC was formed by depositing a mixed solution of nickel tetrachloride, zirconium tetrachloride, silicon tetrachloride, and germanium tetrachloride with a post-rapid thermal annealing process. The electrical properties in terms of memory window, charge retention, program/erase speed, and endurance were demonstrated. The memory window of the NC memory can be up to 2.8 V; the retention times were extrapolated up to 106 sec for about 5% and 10% charge loss at 25 and 85 °C measurement, respectively. The voltage shift after 104 program/erase cycles is less than 1V. The good electrical performance was attributed to the effects of the high-density isolated NCs.

Original languageEnglish
Title of host publicationINEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings
Pages1228-1229
Number of pages2
DOIs
Publication statusPublished - 2010
Externally publishedYes
Event2010 3rd International Nanoelectronics Conference, INEC 2010 - Hongkong, China
Duration: Jan 3 2010Jan 8 2010

Other

Other2010 3rd International Nanoelectronics Conference, INEC 2010
CountryChina
CityHongkong
Period1/3/101/8/10

Fingerprint

Nanocrystals
Sol-gels
Data storage equipment
Rapid thermal annealing
Spin coating
Germanium
Zirconium
Electric properties
Durability
Nickel
Silicon
Electric potential

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Wu, C. C., You, H. C., Ko, F. H., & Yang, W. L. (2010). Novel sol-gel derived SONOS-type nanocrystal memory. In INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings (pp. 1228-1229). [5424933] https://doi.org/10.1109/INEC.2010.5424933

Novel sol-gel derived SONOS-type nanocrystal memory. / Wu, Chi Chang; You, Hsin Chiang; Ko, Fu Hsiang; Yang, Wen Luh.

INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings. 2010. p. 1228-1229 5424933.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Wu, CC, You, HC, Ko, FH & Yang, WL 2010, Novel sol-gel derived SONOS-type nanocrystal memory. in INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings., 5424933, pp. 1228-1229, 2010 3rd International Nanoelectronics Conference, INEC 2010, Hongkong, China, 1/3/10. https://doi.org/10.1109/INEC.2010.5424933
Wu CC, You HC, Ko FH, Yang WL. Novel sol-gel derived SONOS-type nanocrystal memory. In INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings. 2010. p. 1228-1229. 5424933 https://doi.org/10.1109/INEC.2010.5424933
Wu, Chi Chang ; You, Hsin Chiang ; Ko, Fu Hsiang ; Yang, Wen Luh. / Novel sol-gel derived SONOS-type nanocrystal memory. INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings. 2010. pp. 1228-1229
@inproceedings{cb3773a829d04363acfda072364eea36,
title = "Novel sol-gel derived SONOS-type nanocrystal memory",
abstract = "A nanocrystal (NC) memory by sol-gel spin-coating method was demonstrated. The high-density and isolated NC was formed by depositing a mixed solution of nickel tetrachloride, zirconium tetrachloride, silicon tetrachloride, and germanium tetrachloride with a post-rapid thermal annealing process. The electrical properties in terms of memory window, charge retention, program/erase speed, and endurance were demonstrated. The memory window of the NC memory can be up to 2.8 V; the retention times were extrapolated up to 106 sec for about 5{\%} and 10{\%} charge loss at 25 and 85 °C measurement, respectively. The voltage shift after 104 program/erase cycles is less than 1V. The good electrical performance was attributed to the effects of the high-density isolated NCs.",
author = "Wu, {Chi Chang} and You, {Hsin Chiang} and Ko, {Fu Hsiang} and Yang, {Wen Luh}",
year = "2010",
doi = "10.1109/INEC.2010.5424933",
language = "English",
isbn = "9781424435449",
pages = "1228--1229",
booktitle = "INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings",

}

TY - GEN

T1 - Novel sol-gel derived SONOS-type nanocrystal memory

AU - Wu, Chi Chang

AU - You, Hsin Chiang

AU - Ko, Fu Hsiang

AU - Yang, Wen Luh

PY - 2010

Y1 - 2010

N2 - A nanocrystal (NC) memory by sol-gel spin-coating method was demonstrated. The high-density and isolated NC was formed by depositing a mixed solution of nickel tetrachloride, zirconium tetrachloride, silicon tetrachloride, and germanium tetrachloride with a post-rapid thermal annealing process. The electrical properties in terms of memory window, charge retention, program/erase speed, and endurance were demonstrated. The memory window of the NC memory can be up to 2.8 V; the retention times were extrapolated up to 106 sec for about 5% and 10% charge loss at 25 and 85 °C measurement, respectively. The voltage shift after 104 program/erase cycles is less than 1V. The good electrical performance was attributed to the effects of the high-density isolated NCs.

AB - A nanocrystal (NC) memory by sol-gel spin-coating method was demonstrated. The high-density and isolated NC was formed by depositing a mixed solution of nickel tetrachloride, zirconium tetrachloride, silicon tetrachloride, and germanium tetrachloride with a post-rapid thermal annealing process. The electrical properties in terms of memory window, charge retention, program/erase speed, and endurance were demonstrated. The memory window of the NC memory can be up to 2.8 V; the retention times were extrapolated up to 106 sec for about 5% and 10% charge loss at 25 and 85 °C measurement, respectively. The voltage shift after 104 program/erase cycles is less than 1V. The good electrical performance was attributed to the effects of the high-density isolated NCs.

UR - http://www.scopus.com/inward/record.url?scp=77951655417&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=77951655417&partnerID=8YFLogxK

U2 - 10.1109/INEC.2010.5424933

DO - 10.1109/INEC.2010.5424933

M3 - Conference contribution

SN - 9781424435449

SP - 1228

EP - 1229

BT - INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings

ER -