Novel sol-gel derived SONOS-type nanocrystal memory

Chi Chang Wu, Hsin Chiang You, Fu Hsiang Ko, Wen Luh Yang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A nanocrystal (NC) memory by sol-gel spin-coating method was demonstrated. The high-density and isolated NC was formed by depositing a mixed solution of nickel tetrachloride, zirconium tetrachloride, silicon tetrachloride, and germanium tetrachloride with a post-rapid thermal annealing process. The electrical properties in terms of memory window, charge retention, program/erase speed, and endurance were demonstrated. The memory window of the NC memory can be up to 2.8 V; the retention times were extrapolated up to 106 sec for about 5% and 10% charge loss at 25 and 85 °C measurement, respectively. The voltage shift after 104 program/erase cycles is less than 1V. The good electrical performance was attributed to the effects of the high-density isolated NCs.

Original languageEnglish
Title of host publicationINEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings
Pages1228-1229
Number of pages2
DOIs
Publication statusPublished - 2010
Externally publishedYes
Event2010 3rd International Nanoelectronics Conference, INEC 2010 - Hongkong, China
Duration: Jan 3 2010Jan 8 2010

Other

Other2010 3rd International Nanoelectronics Conference, INEC 2010
CountryChina
CityHongkong
Period1/3/101/8/10

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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    Wu, C. C., You, H. C., Ko, F. H., & Yang, W. L. (2010). Novel sol-gel derived SONOS-type nanocrystal memory. In INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings (pp. 1228-1229). [5424933] https://doi.org/10.1109/INEC.2010.5424933