Novel multilayered Ti/TiN diffusion barrier for Al metallization

Wen Fa Wu, Kou Chiang Tsai, Chuen Guang Chao, Jen Chung Chen, Keng Liang Ou

Research output: Contribution to journalArticlepeer-review

21 Citations (Scopus)


A novel, multilayered Ti/TiN diffusion barrier is proposed and successfully applied for Al metallization. The multilayered Ti/TiN structure is effective in enhancing the barrier properties since the very thin Ti layer inserted into titanium nitride (TiN) barrier can cause disruption of the TiN columnar growth and reduction of open grain boundaries resulting in retarded interdiffusion between metal and silicon. Multilayered Ti/TiN films are deposited sequentially by sputtering without breaking vacuum. It is found that TiN grain boundaries are discontinuous when a Ti layer is inserted into TiN. Multilayered Ti/TiN has a better barrier performance than single-layer TiN in Al metallization. However, the barrier performance is related to the number and thickness of the inserted Ti layers, because increasing titanium will enhance chemical reactions between Al and barrier layers, and produce more titanium-aluminum compounds. The total thickness of introduced Ti layers should be reduced to improve barrier performance.

Original languageEnglish
Pages (from-to)1150-1156
Number of pages7
JournalJournal of Electronic Materials
Issue number8
Publication statusPublished - Aug 2005


  • Aluminum
  • Diffusion barrier
  • Multilayer
  • Titanium nitride

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry


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