Novel IrOx/SiO2/W cross-point memory for lysyl-oxidase-like-2 (LOXL2) breast cancer biomarker detection

S. Jana; S. Samanta; S. Roy; J. T. Qiu; S. Maikap

doi:10.1109/VLSI-TSA.2018.8403860

Novel IrO_x/SiO₂/W cross-point memory for lysyl-oxidase-like-2 (LOXL2) breast cancer biomarker detection

S. Jana, S. Samanta, S. Roy, J. T. Qiu, S. Maikap

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Novel IrO_x/SiO₂/W 10x10 μm² cross-point structure has been introduced for high-density resistive memory as well as urea/LOXL2 sensing for the first time. The Ir⁰/Ir³⁺/Ir⁴⁺ oxidation states are confirmed by X-ray photo-electron spectroscopy (XPS) analysis. A dc endurance of > 1000 cycles at low current compliance (CC) of 200 nA and long program/erase (P/E) endurance of >10¹⁰ cycles with a small pulse width of 100 ns are obtained. Super-nernstian pH sensitivity of 140 mV/pH with 99.45% linearity, and LOXL2 with a low concentration of 1 pM through porous IrO_x membrane are obtained.

Original language	English
Title of host publication	2018 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2018
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	1-2
Number of pages	2
ISBN (Electronic)	9781538648254
DOIs	https://doi.org/10.1109/VLSI-TSA.2018.8403860
Publication status	Published - Jul 3 2018
Externally published	Yes
Event	2018 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2018 - Hsinchu, Taiwan Duration: Apr 16 2018 → Apr 19 2018

Publication series

Name	2018 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2018

Conference

Conference	2018 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2018
Country	Taiwan
City	Hsinchu
Period	4/16/18 → 4/19/18

ASJC Scopus subject areas

Electrical and Electronic Engineering
Instrumentation
Electronic, Optical and Magnetic Materials

UN SDGs

This output contributes to the following Sustainable Development Goal(s)

Access to Document

10.1109/VLSI-TSA.2018.8403860

Fingerprint Dive into the research topics of 'Novel IrO<sub>x</sub>/SiO<sub>2</sub>/W cross-point memory for lysyl-oxidase-like-2 (LOXL2) breast cancer biomarker detection'. Together they form a unique fingerprint.

Cite this

Jana, S., Samanta, S., Roy, S., Qiu, J. T., & Maikap, S. (2018). Novel IrO_x/SiO₂/W cross-point memory for lysyl-oxidase-like-2 (LOXL2) breast cancer biomarker detection. In 2018 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2018 (pp. 1-2). (2018 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2018). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/VLSI-TSA.2018.8403860

Novel IrO_x/SiO₂/W cross-point memory for lysyl-oxidase-like-2 (LOXL2) breast cancer biomarker detection. / Jana, S.; Samanta, S.; Roy, S.; Qiu, J. T.; Maikap, S.

2018 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2018. Institute of Electrical and Electronics Engineers Inc., 2018. p. 1-2 (2018 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2018).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Jana, S, Samanta, S, Roy, S, Qiu, JT & Maikap, S 2018, Novel IrO_x/SiO₂/W cross-point memory for lysyl-oxidase-like-2 (LOXL2) breast cancer biomarker detection. in 2018 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2018. 2018 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2018, Institute of Electrical and Electronics Engineers Inc., pp. 1-2, 2018 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2018, Hsinchu, Taiwan, 4/16/18. https://doi.org/10.1109/VLSI-TSA.2018.8403860

Jana S, Samanta S, Roy S, Qiu JT, Maikap S. Novel IrO_x/SiO₂/W cross-point memory for lysyl-oxidase-like-2 (LOXL2) breast cancer biomarker detection. In 2018 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2018. Institute of Electrical and Electronics Engineers Inc. 2018. p. 1-2. (2018 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2018). https://doi.org/10.1109/VLSI-TSA.2018.8403860

Jana, S. ; Samanta, S. ; Roy, S. ; Qiu, J. T. ; Maikap, S. / Novel IrO_x/SiO₂/W cross-point memory for lysyl-oxidase-like-2 (LOXL2) breast cancer biomarker detection. 2018 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2018. Institute of Electrical and Electronics Engineers Inc., 2018. pp. 1-2 (2018 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2018).

@inproceedings{b993ee81d1834b48b62d960da5955470,

title = "Novel IrOx/SiO2/W cross-point memory for lysyl-oxidase-like-2 (LOXL2) breast cancer biomarker detection",

abstract = "Novel IrOx/SiO2/W 10x10 μm2 cross-point structure has been introduced for high-density resistive memory as well as urea/LOXL2 sensing for the first time. The Ir0/Ir3+/Ir4+ oxidation states are confirmed by X-ray photo-electron spectroscopy (XPS) analysis. A dc endurance of > 1000 cycles at low current compliance (CC) of 200 nA and long program/erase (P/E) endurance of >1010 cycles with a small pulse width of 100 ns are obtained. Super-nernstian pH sensitivity of 140 mV/pH with 99.45% linearity, and LOXL2 with a low concentration of 1 pM through porous IrOx membrane are obtained.",

author = "S. Jana and S. Samanta and S. Roy and Qiu, {J. T.} and S. Maikap",

note = "Funding Information: ACKNOWLEDGEMENT This work was supported by Ministry of Science and Technology (MOST) under contract number: MOST-104-2221-E-182-075.; 2018 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2018 ; Conference date: 16-04-2018 Through 19-04-2018",

year = "2018",

month = jul,

day = "3",

doi = "10.1109/VLSI-TSA.2018.8403860",

language = "English",

series = "2018 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2018",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "1--2",

booktitle = "2018 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2018",

address = "United States",

}

TY - GEN

T1 - Novel IrOx/SiO2/W cross-point memory for lysyl-oxidase-like-2 (LOXL2) breast cancer biomarker detection

AU - Jana, S.

AU - Samanta, S.

AU - Roy, S.

AU - Qiu, J. T.

AU - Maikap, S.

N1 - Funding Information: ACKNOWLEDGEMENT This work was supported by Ministry of Science and Technology (MOST) under contract number: MOST-104-2221-E-182-075.

PY - 2018/7/3

Y1 - 2018/7/3

N2 - Novel IrOx/SiO2/W 10x10 μm2 cross-point structure has been introduced for high-density resistive memory as well as urea/LOXL2 sensing for the first time. The Ir0/Ir3+/Ir4+ oxidation states are confirmed by X-ray photo-electron spectroscopy (XPS) analysis. A dc endurance of > 1000 cycles at low current compliance (CC) of 200 nA and long program/erase (P/E) endurance of >1010 cycles with a small pulse width of 100 ns are obtained. Super-nernstian pH sensitivity of 140 mV/pH with 99.45% linearity, and LOXL2 with a low concentration of 1 pM through porous IrOx membrane are obtained.

AB - Novel IrOx/SiO2/W 10x10 μm2 cross-point structure has been introduced for high-density resistive memory as well as urea/LOXL2 sensing for the first time. The Ir0/Ir3+/Ir4+ oxidation states are confirmed by X-ray photo-electron spectroscopy (XPS) analysis. A dc endurance of > 1000 cycles at low current compliance (CC) of 200 nA and long program/erase (P/E) endurance of >1010 cycles with a small pulse width of 100 ns are obtained. Super-nernstian pH sensitivity of 140 mV/pH with 99.45% linearity, and LOXL2 with a low concentration of 1 pM through porous IrOx membrane are obtained.

UR - http://www.scopus.com/inward/record.url?scp=85050480515&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85050480515&partnerID=8YFLogxK

U2 - 10.1109/VLSI-TSA.2018.8403860

DO - 10.1109/VLSI-TSA.2018.8403860

M3 - Conference contribution

AN - SCOPUS:85050480515

T3 - 2018 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2018

SP - 1

EP - 2

BT - 2018 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2018

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2018 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2018

Y2 - 16 April 2018 through 19 April 2018

ER -