Novel IrOx/SiO2/W cross-point memory for lysyl-oxidase-like-2 (LOXL2) breast cancer biomarker detection

S. Jana; S. Samanta; S. Roy; J. T. Qiu; S. Maikap

doi:10.1109/VLSI-TSA.2018.8403860

Novel IrO_x/SiO₂/W cross-point memory for lysyl-oxidase-like-2 (LOXL2) breast cancer biomarker detection

S. Jana, S. Samanta, S. Roy, J. T. Qiu, S. Maikap

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Novel IrO_x/SiO₂/W 10x10 μm² cross-point structure has been introduced for high-density resistive memory as well as urea/LOXL2 sensing for the first time. The Ir⁰/Ir³⁺/Ir⁴⁺ oxidation states are confirmed by X-ray photo-electron spectroscopy (XPS) analysis. A dc endurance of > 1000 cycles at low current compliance (CC) of 200 nA and long program/erase (P/E) endurance of >10¹⁰ cycles with a small pulse width of 100 ns are obtained. Super-nernstian pH sensitivity of 140 mV/pH with 99.45% linearity, and LOXL2 with a low concentration of 1 pM through porous IrO_x membrane are obtained.

Original language	English
Title of host publication	2018 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2018
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	1-2
Number of pages	2
ISBN (Electronic)	9781538648254
DOIs	https://doi.org/10.1109/VLSI-TSA.2018.8403860
Publication status	Published - Jul 3 2018
Externally published	Yes
Event	2018 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2018 - Hsinchu, Taiwan Duration: Apr 16 2018 → Apr 19 2018

Publication series

Name	2018 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2018

Conference

Conference	2018 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2018
Country/Territory	Taiwan
City	Hsinchu
Period	4/16/18 → 4/19/18

ASJC Scopus subject areas

Electrical and Electronic Engineering
Instrumentation
Electronic, Optical and Magnetic Materials

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Access to Document

10.1109/VLSI-TSA.2018.8403860

Cite this

Jana, S., Samanta, S., Roy, S., Qiu, J. T., & Maikap, S. (2018). Novel IrO_x/SiO₂/W cross-point memory for lysyl-oxidase-like-2 (LOXL2) breast cancer biomarker detection. In 2018 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2018 (pp. 1-2). (2018 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2018). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/VLSI-TSA.2018.8403860

Novel IrO_x/SiO₂/W cross-point memory for lysyl-oxidase-like-2 (LOXL2) breast cancer biomarker detection. / Jana, S.; Samanta, S.; Roy, S.; Qiu, J. T.; Maikap, S.

2018 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2018. Institute of Electrical and Electronics Engineers Inc., 2018. p. 1-2 (2018 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2018).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Jana, S, Samanta, S, Roy, S, Qiu, JT & Maikap, S 2018, Novel IrO_x/SiO₂/W cross-point memory for lysyl-oxidase-like-2 (LOXL2) breast cancer biomarker detection. in 2018 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2018. 2018 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2018, Institute of Electrical and Electronics Engineers Inc., pp. 1-2, 2018 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2018, Hsinchu, Taiwan, 4/16/18. https://doi.org/10.1109/VLSI-TSA.2018.8403860

Jana S, Samanta S, Roy S, Qiu JT, Maikap S. Novel IrO_x/SiO₂/W cross-point memory for lysyl-oxidase-like-2 (LOXL2) breast cancer biomarker detection. In 2018 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2018. Institute of Electrical and Electronics Engineers Inc. 2018. p. 1-2. (2018 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2018). https://doi.org/10.1109/VLSI-TSA.2018.8403860

Jana, S. ; Samanta, S. ; Roy, S. ; Qiu, J. T. ; Maikap, S. / Novel IrO_x/SiO₂/W cross-point memory for lysyl-oxidase-like-2 (LOXL2) breast cancer biomarker detection. 2018 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2018. Institute of Electrical and Electronics Engineers Inc., 2018. pp. 1-2 (2018 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2018).

@inproceedings{b993ee81d1834b48b62d960da5955470,

title = "Novel IrOx/SiO2/W cross-point memory for lysyl-oxidase-like-2 (LOXL2) breast cancer biomarker detection",

abstract = "Novel IrOx/SiO2/W 10x10 μm2 cross-point structure has been introduced for high-density resistive memory as well as urea/LOXL2 sensing for the first time. The Ir0/Ir3+/Ir4+ oxidation states are confirmed by X-ray photo-electron spectroscopy (XPS) analysis. A dc endurance of > 1000 cycles at low current compliance (CC) of 200 nA and long program/erase (P/E) endurance of >1010 cycles with a small pulse width of 100 ns are obtained. Super-nernstian pH sensitivity of 140 mV/pH with 99.45% linearity, and LOXL2 with a low concentration of 1 pM through porous IrOx membrane are obtained.",

author = "S. Jana and S. Samanta and S. Roy and Qiu, {J. T.} and S. Maikap",

note = "Funding Information: ACKNOWLEDGEMENT This work was supported by Ministry of Science and Technology (MOST) under contract number: MOST-104-2221-E-182-075. Publisher Copyright: {\textcopyright} 2018 IEEE.; 2018 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2018 ; Conference date: 16-04-2018 Through 19-04-2018",

year = "2018",

month = jul,

day = "3",

doi = "10.1109/VLSI-TSA.2018.8403860",

language = "English",

series = "2018 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2018",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "1--2",

booktitle = "2018 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2018",

address = "United States",

}

TY - GEN

T1 - Novel IrOx/SiO2/W cross-point memory for lysyl-oxidase-like-2 (LOXL2) breast cancer biomarker detection

AU - Jana, S.

AU - Samanta, S.

AU - Roy, S.

AU - Qiu, J. T.

AU - Maikap, S.

PY - 2018/7/3

Y1 - 2018/7/3

N2 - Novel IrOx/SiO2/W 10x10 μm2 cross-point structure has been introduced for high-density resistive memory as well as urea/LOXL2 sensing for the first time. The Ir0/Ir3+/Ir4+ oxidation states are confirmed by X-ray photo-electron spectroscopy (XPS) analysis. A dc endurance of > 1000 cycles at low current compliance (CC) of 200 nA and long program/erase (P/E) endurance of >1010 cycles with a small pulse width of 100 ns are obtained. Super-nernstian pH sensitivity of 140 mV/pH with 99.45% linearity, and LOXL2 with a low concentration of 1 pM through porous IrOx membrane are obtained.

AB - Novel IrOx/SiO2/W 10x10 μm2 cross-point structure has been introduced for high-density resistive memory as well as urea/LOXL2 sensing for the first time. The Ir0/Ir3+/Ir4+ oxidation states are confirmed by X-ray photo-electron spectroscopy (XPS) analysis. A dc endurance of > 1000 cycles at low current compliance (CC) of 200 nA and long program/erase (P/E) endurance of >1010 cycles with a small pulse width of 100 ns are obtained. Super-nernstian pH sensitivity of 140 mV/pH with 99.45% linearity, and LOXL2 with a low concentration of 1 pM through porous IrOx membrane are obtained.

UR - http://www.scopus.com/inward/record.url?scp=85050480515&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85050480515&partnerID=8YFLogxK

U2 - 10.1109/VLSI-TSA.2018.8403860

DO - 10.1109/VLSI-TSA.2018.8403860

M3 - Conference contribution

AN - SCOPUS:85050480515

T3 - 2018 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2018

SP - 1

EP - 2

BT - 2018 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2018

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2018 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2018

Y2 - 16 April 2018 through 19 April 2018

ER -