Microstructural and optical properties of Ga-doped ZnO semiconductor thin films prepared by sol-gel process

Chien Yie Tsay, Chun Wei Wu, Chien Ming Lei, Fan Shiong Chen, Chung Kwei Lin

Research output: Contribution to journalArticle

90 Citations (Scopus)

Abstract

Transparent thin films of Ga-doped ZnO (GZO), with Ga dopant levels that varied from 0 to 7 at.%, were deposited onto alkali-free glass substrates by a sol-gel process. Each spin-coated film was preheated at 300 °C for 10 min, and then annealed at 500 °C for 1 h under air ambiance. The effects of Ga dopant concentrations on crystallinity levels, microstructures, optical properties, and electrical resistivities of these ZnO thin films were systematically investigated. Photoluminescence spectra of GZO thin films were examined at room temperature. XRD results revealed that the undoped ZnO thin films exhibited a preferred orientation along the (002) plane and that the ZnO thin films doped with Ga showed degraded crystallinity. Experimental results also showed that Ga doping of ZnO thin films could markedly decrease surface roughness, improve transparency in the visible range, and produce finer microstructures than those of undoped ZnO thin films. The most promising films for transparent thin film transistor (TTFT) application produced in this study, were the 3 and 5 at.% Ga-doped ZnO thin films, both of which exhibited an average transmittance of 90.6% and an RMS roughness value of about 2.0 nm.

Original languageEnglish
Pages (from-to)1516-1520
Number of pages5
JournalThin Solid Films
Volume519
Issue number5
DOIs
Publication statusPublished - Dec 30 2010
Externally publishedYes

Fingerprint

sol-gel processes
Sol-gel process
Optical properties
Semiconductor materials
optical properties
Thin films
thin films
Doping (additives)
Surface roughness
crystallinity
Microstructure
ambience
microstructure
Alkalies
Thin film transistors
Transparency
Photoluminescence
alkalies
transmittance
surface roughness

Keywords

  • Ga-doped ZnO
  • Photoluminescence
  • Sol-gel process
  • Transparent oxide semiconductor

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry
  • Metals and Alloys
  • Surfaces, Coatings and Films
  • Surfaces and Interfaces

Cite this

Microstructural and optical properties of Ga-doped ZnO semiconductor thin films prepared by sol-gel process. / Tsay, Chien Yie; Wu, Chun Wei; Lei, Chien Ming; Chen, Fan Shiong; Lin, Chung Kwei.

In: Thin Solid Films, Vol. 519, No. 5, 30.12.2010, p. 1516-1520.

Research output: Contribution to journalArticle

Tsay, Chien Yie ; Wu, Chun Wei ; Lei, Chien Ming ; Chen, Fan Shiong ; Lin, Chung Kwei. / Microstructural and optical properties of Ga-doped ZnO semiconductor thin films prepared by sol-gel process. In: Thin Solid Films. 2010 ; Vol. 519, No. 5. pp. 1516-1520.
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