1 Citation (Scopus)

Abstract

This study investigated the formation of quaternary NiZrSiGe nanocrystal (NC) flash memory by using the sol-gel spin-coating method. A solution of nickel dichloride, zirconium tetrachloride, silicon tetrachloride, and germanium tetrachloride was used as a precursor to form the sol-gel thin film. Unlike the NiZrSi control sample that exhibited a continuous and smooth film after anneal, the NiZrSiGe transformed into NCs after undergoing thermal annealing in an O2 ambient. Based on TEM analysis, the size of the nanocrystals was 2-4 nm. Compare to the NiZrSi control sample, the NiZrSiGe memory exhibits improved electrical performance in memory windows, program/erase speed, and device reliability. The memory window of the quaternary NiZrSiGe nanocrystal memory was approximately 3.84 V. The retention characteristics of the memory can be up to 106 s at room temperature measurement with an approximately 8% charge loss, or an approximately 10% charge loss at 85°C measurement. The Vt shift of the program and erase states after 104 cycles was approximately 1 V. These results show that quaternary NiZrSiGe nanocrystal devices exhibit excellent memory performance.

Original languageEnglish
Pages (from-to)6500-6508
Number of pages9
JournalInternational Journal of Electrochemical Science
Volume10
Issue number8
Publication statusPublished - 2015

Fingerprint

Nanocrystals
Data storage equipment
Temperature
Sol-gels
Germanium
Flash memory
Spin coating
Nickel
Zirconium
Temperature measurement
Annealing
Transmission electron microscopy
Thin films
Silicon

Keywords

  • Flash memory
  • Nanocrystal
  • Non-volatile
  • SONOS

ASJC Scopus subject areas

  • Electrochemistry

Cite this

Low-temperature formed quaternary NiZrSiGe nanocrystal memory. / Wu, Chia Yu; Huang, Huei Yu; Wu, Chi Chang.

In: International Journal of Electrochemical Science, Vol. 10, No. 8, 2015, p. 6500-6508.

Research output: Contribution to journalArticle

@article{df7ff1108c964dd2b93a9004bc88518d,
title = "Low-temperature formed quaternary NiZrSiGe nanocrystal memory",
abstract = "This study investigated the formation of quaternary NiZrSiGe nanocrystal (NC) flash memory by using the sol-gel spin-coating method. A solution of nickel dichloride, zirconium tetrachloride, silicon tetrachloride, and germanium tetrachloride was used as a precursor to form the sol-gel thin film. Unlike the NiZrSi control sample that exhibited a continuous and smooth film after anneal, the NiZrSiGe transformed into NCs after undergoing thermal annealing in an O2 ambient. Based on TEM analysis, the size of the nanocrystals was 2-4 nm. Compare to the NiZrSi control sample, the NiZrSiGe memory exhibits improved electrical performance in memory windows, program/erase speed, and device reliability. The memory window of the quaternary NiZrSiGe nanocrystal memory was approximately 3.84 V. The retention characteristics of the memory can be up to 106 s at room temperature measurement with an approximately 8{\%} charge loss, or an approximately 10{\%} charge loss at 85°C measurement. The Vt shift of the program and erase states after 104 cycles was approximately 1 V. These results show that quaternary NiZrSiGe nanocrystal devices exhibit excellent memory performance.",
keywords = "Flash memory, Nanocrystal, Non-volatile, SONOS",
author = "Wu, {Chia Yu} and Huang, {Huei Yu} and Wu, {Chi Chang}",
year = "2015",
language = "English",
volume = "10",
pages = "6500--6508",
journal = "International Journal of Electrochemical Science",
issn = "1452-3981",
publisher = "Electrochemical Science Group",
number = "8",

}

TY - JOUR

T1 - Low-temperature formed quaternary NiZrSiGe nanocrystal memory

AU - Wu, Chia Yu

AU - Huang, Huei Yu

AU - Wu, Chi Chang

PY - 2015

Y1 - 2015

N2 - This study investigated the formation of quaternary NiZrSiGe nanocrystal (NC) flash memory by using the sol-gel spin-coating method. A solution of nickel dichloride, zirconium tetrachloride, silicon tetrachloride, and germanium tetrachloride was used as a precursor to form the sol-gel thin film. Unlike the NiZrSi control sample that exhibited a continuous and smooth film after anneal, the NiZrSiGe transformed into NCs after undergoing thermal annealing in an O2 ambient. Based on TEM analysis, the size of the nanocrystals was 2-4 nm. Compare to the NiZrSi control sample, the NiZrSiGe memory exhibits improved electrical performance in memory windows, program/erase speed, and device reliability. The memory window of the quaternary NiZrSiGe nanocrystal memory was approximately 3.84 V. The retention characteristics of the memory can be up to 106 s at room temperature measurement with an approximately 8% charge loss, or an approximately 10% charge loss at 85°C measurement. The Vt shift of the program and erase states after 104 cycles was approximately 1 V. These results show that quaternary NiZrSiGe nanocrystal devices exhibit excellent memory performance.

AB - This study investigated the formation of quaternary NiZrSiGe nanocrystal (NC) flash memory by using the sol-gel spin-coating method. A solution of nickel dichloride, zirconium tetrachloride, silicon tetrachloride, and germanium tetrachloride was used as a precursor to form the sol-gel thin film. Unlike the NiZrSi control sample that exhibited a continuous and smooth film after anneal, the NiZrSiGe transformed into NCs after undergoing thermal annealing in an O2 ambient. Based on TEM analysis, the size of the nanocrystals was 2-4 nm. Compare to the NiZrSi control sample, the NiZrSiGe memory exhibits improved electrical performance in memory windows, program/erase speed, and device reliability. The memory window of the quaternary NiZrSiGe nanocrystal memory was approximately 3.84 V. The retention characteristics of the memory can be up to 106 s at room temperature measurement with an approximately 8% charge loss, or an approximately 10% charge loss at 85°C measurement. The Vt shift of the program and erase states after 104 cycles was approximately 1 V. These results show that quaternary NiZrSiGe nanocrystal devices exhibit excellent memory performance.

KW - Flash memory

KW - Nanocrystal

KW - Non-volatile

KW - SONOS

UR - http://www.scopus.com/inward/record.url?scp=84941312989&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84941312989&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:84941312989

VL - 10

SP - 6500

EP - 6508

JO - International Journal of Electrochemical Science

JF - International Journal of Electrochemical Science

SN - 1452-3981

IS - 8

ER -