Low-temperature fabrication of superconducting FeSe thin films by pulsed laser deposition

Ta Kun Chen, Jiu Yong Luo, Chung Ting Ke, Hsian Hong Chang, Tzu Wen Huang, Kuo Wei Yeh, Chung Chieh Chang, Po Chun Hsu, Chun Te Wu, Ming Jye Wang, Mau Kuen Wu

Research output: Contribution to journalArticle

27 Citations (Scopus)

Abstract

Superconducting FeSe thin films were prepared at a substrate temperature of 320 °C by pulsed laser deposition. X-ray diffraction and transmission electron microscopic analyses showed that highly c-axis-orientated and high-quality films were obtained on various substrate materials, including single-crystal MgO, LaAlO3, SrTiO3 and (100)-Si, and amorphous-SiOx, at such low temperature. From transport measurements all the films showed low-temperature structural phase transition at ∼ 60-90 K and superconducting transition at onset temperature varies from ∼ 7 K to < 2 K, depending on the substrate used. The transport property of FeSe film on Si was found most different from all the others, in spite of their similarity in structural analysis. Chemical analysis demonstrated that Fe and Se homogeneously distributed in the film and the stoichiometry of FeSe and the bonding states of Fe and Se are as well uniform along the film growth direction.

Original languageEnglish
Pages (from-to)1540-1545
Number of pages6
JournalThin Solid Films
Volume519
Issue number5
DOIs
Publication statusPublished - Dec 30 2010
Externally publishedYes

Fingerprint

Superconducting films
Pulsed laser deposition
pulsed laser deposition
Fabrication
fabrication
thin films
Substrates
Temperature
Film growth
Structural analysis
Stoichiometry
Transport properties
chemical analysis
structural analysis
Phase transitions
Single crystals
stoichiometry
X ray diffraction
transport properties
Electrons

Keywords

  • Epitaxial growth
  • FeSe
  • Interfacial stress
  • Pulsed laser deposition
  • Superconducting film

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry
  • Metals and Alloys
  • Surfaces, Coatings and Films
  • Surfaces and Interfaces

Cite this

Chen, T. K., Luo, J. Y., Ke, C. T., Chang, H. H., Huang, T. W., Yeh, K. W., ... Wu, M. K. (2010). Low-temperature fabrication of superconducting FeSe thin films by pulsed laser deposition. Thin Solid Films, 519(5), 1540-1545. https://doi.org/10.1016/j.tsf.2010.06.002

Low-temperature fabrication of superconducting FeSe thin films by pulsed laser deposition. / Chen, Ta Kun; Luo, Jiu Yong; Ke, Chung Ting; Chang, Hsian Hong; Huang, Tzu Wen; Yeh, Kuo Wei; Chang, Chung Chieh; Hsu, Po Chun; Wu, Chun Te; Wang, Ming Jye; Wu, Mau Kuen.

In: Thin Solid Films, Vol. 519, No. 5, 30.12.2010, p. 1540-1545.

Research output: Contribution to journalArticle

Chen, TK, Luo, JY, Ke, CT, Chang, HH, Huang, TW, Yeh, KW, Chang, CC, Hsu, PC, Wu, CT, Wang, MJ & Wu, MK 2010, 'Low-temperature fabrication of superconducting FeSe thin films by pulsed laser deposition', Thin Solid Films, vol. 519, no. 5, pp. 1540-1545. https://doi.org/10.1016/j.tsf.2010.06.002
Chen, Ta Kun ; Luo, Jiu Yong ; Ke, Chung Ting ; Chang, Hsian Hong ; Huang, Tzu Wen ; Yeh, Kuo Wei ; Chang, Chung Chieh ; Hsu, Po Chun ; Wu, Chun Te ; Wang, Ming Jye ; Wu, Mau Kuen. / Low-temperature fabrication of superconducting FeSe thin films by pulsed laser deposition. In: Thin Solid Films. 2010 ; Vol. 519, No. 5. pp. 1540-1545.
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AU - Yeh, Kuo Wei

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AB - Superconducting FeSe thin films were prepared at a substrate temperature of 320 °C by pulsed laser deposition. X-ray diffraction and transmission electron microscopic analyses showed that highly c-axis-orientated and high-quality films were obtained on various substrate materials, including single-crystal MgO, LaAlO3, SrTiO3 and (100)-Si, and amorphous-SiOx, at such low temperature. From transport measurements all the films showed low-temperature structural phase transition at ∼ 60-90 K and superconducting transition at onset temperature varies from ∼ 7 K to < 2 K, depending on the substrate used. The transport property of FeSe film on Si was found most different from all the others, in spite of their similarity in structural analysis. Chemical analysis demonstrated that Fe and Se homogeneously distributed in the film and the stoichiometry of FeSe and the bonding states of Fe and Se are as well uniform along the film growth direction.

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