Low-resistivity C54-TiSi2 as a sidewall-confinement nanoscale electrode for three-dimensional vertical resistive memory

José Ramón Durán Retamal, Chen Fang Kang, Po Kang Yang, Chuan Pei Lee, Der Hsien Lien, Chih Hsiang Ho, Jr Hau He

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A three-dimensional (3D) double-layer HfO2-based vertical-resistive random access memory (VRRAM) with low-resistivity C54-TiSi2 as horizontal electrodes is demonstrated using complementary metal-oxide semiconductor processing. The electrical measurements show bipolar resistive switching by using C54-TiSi2 as electrodes for resistive switching (RS) applications. The statistical analysis exhibits cycle-to-cycle and cell-to-cell stable non-volatile properties with robust endurance (100 cycles) and long term data retention (104s), suggesting that the ultrathin sidewall of C54-TiSi2 nanoscale electrodes serve to confine and stabilize the random nature of the conducting nanofilaments. The superior RS characteristics demonstrated here highlight the applicability of C54-TiSi2 sidewall-confinement nanoscale electrodes to VRRAM.

Original languageEnglish
Article number182101
JournalApplied Physics Letters
Issue number18
Publication statusPublished - Nov 3 2014
Externally publishedYes


ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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