Investigated Raman Spectroscopy of Graphene material properties

Jian Chiun Liou, Yi Tsung Chang, Kuan Wen Fang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Raman spectrum of a graphene edge, showing the main raman features, the D band(∼1350 cm-1), G band(∼1580 cm-1) and 2D band (∼2700 cm-1) taken with a laser excitation energy of 2.41 eV. D band is not easy to be found in the good structure of the graphite, generally D band and G band integral intensity ratio ID/IG, to determine whether the carbon material defects and the crystallization of the pros and cons, but D band is usually also the incident light wavelength with the impact of the incident area. The insert voltage conditions with H2SO4 and KOH is demo in the study. The D band and G band integral intensity ratio ID/IG is equal 1.08, and FWHM(cm-1) is equal 97.6 value.

Original languageEnglish
Title of host publicationEDSSC 2017 - 13th IEEE International Conference on Electron Devices and Solid-State Circuits
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages1-2
Number of pages2
Volume2017-January
ISBN (Electronic)9781538629079
DOIs
Publication statusPublished - Dec 1 2017
Externally publishedYes
Event13th IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2017 - Hsinchu, Taiwan
Duration: Oct 18 2017Oct 20 2017

Conference

Conference13th IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2017
CountryTaiwan
CityHsinchu
Period10/18/1710/20/17

Fingerprint

Laser excitation
Graphite
Excitation energy
Full width at half maximum
Graphene
Raman spectroscopy
Raman scattering
Materials properties
Crystallization
Wavelength
Defects
Carbon
Electric potential

Keywords

  • Graphene
  • KOH
  • Raman spectrum

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Hardware and Architecture
  • Electrical and Electronic Engineering

Cite this

Liou, J. C., Chang, Y. T., & Fang, K. W. (2017). Investigated Raman Spectroscopy of Graphene material properties. In EDSSC 2017 - 13th IEEE International Conference on Electron Devices and Solid-State Circuits (Vol. 2017-January, pp. 1-2). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/EDSSC.2017.8333243

Investigated Raman Spectroscopy of Graphene material properties. / Liou, Jian Chiun; Chang, Yi Tsung; Fang, Kuan Wen.

EDSSC 2017 - 13th IEEE International Conference on Electron Devices and Solid-State Circuits. Vol. 2017-January Institute of Electrical and Electronics Engineers Inc., 2017. p. 1-2.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Liou, JC, Chang, YT & Fang, KW 2017, Investigated Raman Spectroscopy of Graphene material properties. in EDSSC 2017 - 13th IEEE International Conference on Electron Devices and Solid-State Circuits. vol. 2017-January, Institute of Electrical and Electronics Engineers Inc., pp. 1-2, 13th IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2017, Hsinchu, Taiwan, 10/18/17. https://doi.org/10.1109/EDSSC.2017.8333243
Liou JC, Chang YT, Fang KW. Investigated Raman Spectroscopy of Graphene material properties. In EDSSC 2017 - 13th IEEE International Conference on Electron Devices and Solid-State Circuits. Vol. 2017-January. Institute of Electrical and Electronics Engineers Inc. 2017. p. 1-2 https://doi.org/10.1109/EDSSC.2017.8333243
Liou, Jian Chiun ; Chang, Yi Tsung ; Fang, Kuan Wen. / Investigated Raman Spectroscopy of Graphene material properties. EDSSC 2017 - 13th IEEE International Conference on Electron Devices and Solid-State Circuits. Vol. 2017-January Institute of Electrical and Electronics Engineers Inc., 2017. pp. 1-2
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