Integrated Multi-Level CMOS Electrostatic Discharge (MLC-ESD) Protection Medical Ultrasound Chip System

Jian Chiun Liou, Wen De Lin

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

This paper describes the advantages of integrating a common Power Clamp with the ability to withstand voltage and save on wafer area. The system chip does not require a power clamp for each input source. It is as long as the system core circuit by electrostatic protection. It can reach normal operation and save as much chip area as possible. The structure of this paper has three main features: (1) electrostatic protection (ESD) circuit common Power Clamp combination (2) T025 process high and low voltage ESD (3) The experiment and results within ESD system. The results of ESD sensitivity passed is-6250V~+6200V for type HBM mode. It is-375V~+375V for type MM mode.

Original languageEnglish
Title of host publicationProceedings - 3rd International Conference on Green Technology and Sustainable Development, GTSD 2016
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages78-81
Number of pages4
ISBN (Electronic)9781509036387
DOIs
Publication statusPublished - Dec 22 2016
Externally publishedYes
Event3rd International Conference on Green Technology and Sustainable Development, GTSD 2016 - Kaohsiung, Taiwan
Duration: Nov 24 2016Nov 25 2016

Conference

Conference3rd International Conference on Green Technology and Sustainable Development, GTSD 2016
CountryTaiwan
CityKaohsiung
Period11/24/1611/25/16

Keywords

  • CMOS
  • ESD

ASJC Scopus subject areas

  • Environmental Science (miscellaneous)
  • Environmental Engineering

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  • Cite this

    Liou, J. C., & Lin, W. D. (2016). Integrated Multi-Level CMOS Electrostatic Discharge (MLC-ESD) Protection Medical Ultrasound Chip System. In Proceedings - 3rd International Conference on Green Technology and Sustainable Development, GTSD 2016 (pp. 78-81). [7796623] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/GTSD.2016.28