Improving the leakage current of polyimide-based resistive memory by tuning the molecular chain stack of the polyimide film

Chi Chang Wu, Yu Ping Hsiao, Hsin Chiang You, Guan Wei Lin, Min Fang Kao, Yankuba B. Manga, Wen Luh Yang

Research output: Contribution to journalArticle

Abstract

We have developed an organic-based resistive random access memory (ReRAM) by using spin-coated polyimide (PI) as the resistive layer. In this study, the chain distance and number of chain stacks of PI molecules are investigated. We employed different solid contents of polyamic acid (PAA) to synthesize various PI films, which served as the resistive layer of ReRAM, the electrical performance of which was evaluated. By tuning the PAA solid content, the intermolecular interaction energy of the PI films is changed without altering the molecular structure. Our results show that the leakage current in the high-resistance state and the memory window of the PI-based ReRAM can be substantially improved using this technique. The superior properties of the PI-based ReRAM are ascribed to fewer molecular chain stacks in the PI films when the PAA solid content is decreased, hence suppressing the leakage current. In addition, a device retention time of more than 107 s can be achieved using this technique. Finally, the conduction mechanism in the PI-based ReRAM was analyzed using hopping and conduction models.

Original languageEnglish
Article number02CA02
JournalJapanese Journal of Applied Physics
Volume57
Issue number2
DOIs
Publication statusPublished - Feb 1 2018

Fingerprint

molecular chains
polyimides
Polyimides
Leakage currents
leakage
Tuning
tuning
random access memory
Data storage equipment
acids
Acids
conduction
high resistance
Molecular structure
molecular structure
Molecules

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Improving the leakage current of polyimide-based resistive memory by tuning the molecular chain stack of the polyimide film. / Wu, Chi Chang; Hsiao, Yu Ping; You, Hsin Chiang; Lin, Guan Wei; Kao, Min Fang; Manga, Yankuba B.; Yang, Wen Luh.

In: Japanese Journal of Applied Physics, Vol. 57, No. 2, 02CA02, 01.02.2018.

Research output: Contribution to journalArticle

Wu, Chi Chang ; Hsiao, Yu Ping ; You, Hsin Chiang ; Lin, Guan Wei ; Kao, Min Fang ; Manga, Yankuba B. ; Yang, Wen Luh. / Improving the leakage current of polyimide-based resistive memory by tuning the molecular chain stack of the polyimide film. In: Japanese Journal of Applied Physics. 2018 ; Vol. 57, No. 2.
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