Improving retention properties by thermal imidization for polyimide-based nonvolatile resistive random access memories

Yu Ping Hsiao, Wen Luh Yang, Li Min Lin, Fun Tat Chin, Yu Hsien Lin, Ke Luen Yang, Chi Chang Wu

Research output: Contribution to journalArticlepeer-review

5 Citations (Scopus)

Abstract

In this study, a polyimide (PI) thin film was synthesized as a resistive layer for creating resistive random access memory (ReRAM). The switch between high- and low-resistance states is caused by the formation and dissociation of dipole direction and Schottky barrier. The impact of imidization on memory properties was evaluated in detail by clarifying the transmission mechanism, and reliability properties including retention and endurance were improved using thermal imidization. In addition, the proposed PI-based ReRAM demonstrated superior performance levels compared with those of electrochemical-metallization-based and valence-change-based ReRAMs, including higher RON/ROFF ratio (>107) and lower operation energy (

Original languageEnglish
JournalMicroelectronics Reliability
DOIs
Publication statusAccepted/In press - Nov 19 2014

Keywords

  • Polyimide (PI)
  • Resistive random access memory (ReRAM)
  • Thermal imidization

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Surfaces, Coatings and Films
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Safety, Risk, Reliability and Quality

Fingerprint Dive into the research topics of 'Improving retention properties by thermal imidization for polyimide-based nonvolatile resistive random access memories'. Together they form a unique fingerprint.

Cite this