Improving retention properties by thermal imidization for polyimide-based nonvolatile resistive random access memories

Yu Ping Hsiao, Wen Luh Yang, Li Min Lin, Fun Tat Chin, Yu Hsien Lin, Ke Luen Yang, Chi Chang Wu

Research output: Contribution to journalArticlepeer-review

5 Citations (Scopus)

Abstract

In this study, a polyimide (PI) thin film was synthesized as a resistive layer for creating resistive random access memory (ReRAM). The switch between high- and low-resistance states is caused by the formation and dissociation of dipole direction and Schottky barrier. The impact of imidization on memory properties was evaluated in detail by clarifying the transmission mechanism, and reliability properties including retention and endurance were improved using thermal imidization. In addition, the proposed PI-based ReRAM demonstrated superior performance levels compared with those of electrochemical-metallization-based and valence-change-based ReRAMs, including higher RON/ROFF ratio (> 107) and lower operation energy (< 0.16 MV/cm).

Original languageEnglish
Pages (from-to)2188-2197
Number of pages10
JournalMicroelectronics Reliability
Volume55
Issue number11
DOIs
Publication statusPublished - 2015

Keywords

  • Polyimide (PI)
  • Resistive random access memory (ReRAM)
  • Thermal imidization

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Safety, Risk, Reliability and Quality
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

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