Improving electrical characteristics of Ta Ta2 O5 Ta capacitors using low-temperature inductively coupled N2 O plasma annealing

Kou Chiang Tsai, Wen Fa Wu, Chuen Guang Chao, Chi Chang Wu

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

The electrical characteristics of Ta Ta2 O5 Ta capacitors are improved by treatments with inductively coupled N2 O plasma. A low-temperature (250°C) and short (5 min) process was used to reduce the leakage current and improve the reliability. A low leakage current density (4.0× 10-10 A cm2 under 1 MVcm), high breakdown field (4.2 MVcm at 10-6 A cm2), and lifetime of over 10 years at 1.61 MVcm is obtained for the Ta Ta2 O5 Ta capacitor with the inductively coupled N2 O plasma treatment. The conduction mechanism of the leakage current in the Ta Ta2 O5 Ta capacitor is discussed using current-voltage analyses and shows that the leakage current of the Ta Ta2 O5 Ta capacitor is dominated by Schottky emission. N2 O plasma treatment can effectively reduce oxygen vacancies and the surface roughness of the Ta2 O5 film, inhibiting the conduction of the leakage current.

Original languageEnglish
JournalJournal of the Electrochemical Society
Volume154
Issue number6
DOIs
Publication statusPublished - 2007
Externally publishedYes

ASJC Scopus subject areas

  • Electrochemistry
  • Surfaces, Coatings and Films
  • Surfaces and Interfaces

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