Improvement in the characteristics of GaN-based light-emitting diodes by inserting A1GaN-GaN short-period superlattices in GaN underlayers

Cheng Liang Wang, Jyh Rong Gong, Ming Fa Yeh, Bor Jen Wu, Wei Tsai Liao, Tai Yuan Lin, Chung Kwei Lin

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

We report the influence of short-period superlattice (SPSL)-inserted structures in the underlying undoped GaN on the characteristics of GaN-based light-emitting diodes (LEDs). The measurements of current-voltage (I-V) curves indicate that GaN-based LEDs having pseudomorphic Al 0.3Ga 0.7 N(2 nm)-GaN(2 nm) SPSL-inserted structures exhibit improvements in device characteristics with the best LED being inserted with two sets of five-pair Al 0.3Ga 0.7 N(2 nm)-GaN(2 nm) SPSL structure. Based upon the results of etch pit counts, double-crystal X-ray diffraction measurements and transmission electron microscopic observations of the GaN-based LEDs, it was found that the Al 0.3Ga 0.7 N(2 nm)-GaN(2 nm) SPSL-inserted structures tended to serve as threading dislocation filters in the LEDs so that the improved I-V characteristics were achieved.

Original languageEnglish
Pages (from-to)1497-1499
Number of pages3
JournalIEEE Photonics Technology Letters
Volume18
Issue number14
DOIs
Publication statusPublished - Jul 15 2006
Externally publishedYes

Fingerprint

Superlattices
Light emitting diodes
superlattices
light emitting diodes
filters
X ray diffraction
Crystals
Electrons
Electric potential
electric potential
curves
diffraction
crystals
electrons
x rays

Keywords

  • GaN
  • Light-emitting diode (LED)
  • Short-period superlattice (SPSL)

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Atomic and Molecular Physics, and Optics
  • Physics and Astronomy (miscellaneous)

Cite this

Improvement in the characteristics of GaN-based light-emitting diodes by inserting A1GaN-GaN short-period superlattices in GaN underlayers. / Wang, Cheng Liang; Gong, Jyh Rong; Yeh, Ming Fa; Wu, Bor Jen; Liao, Wei Tsai; Lin, Tai Yuan; Lin, Chung Kwei.

In: IEEE Photonics Technology Letters, Vol. 18, No. 14, 15.07.2006, p. 1497-1499.

Research output: Contribution to journalArticle

Wang, Cheng Liang ; Gong, Jyh Rong ; Yeh, Ming Fa ; Wu, Bor Jen ; Liao, Wei Tsai ; Lin, Tai Yuan ; Lin, Chung Kwei. / Improvement in the characteristics of GaN-based light-emitting diodes by inserting A1GaN-GaN short-period superlattices in GaN underlayers. In: IEEE Photonics Technology Letters. 2006 ; Vol. 18, No. 14. pp. 1497-1499.
@article{1a869814da34432ba2ae94bc00bba1a2,
title = "Improvement in the characteristics of GaN-based light-emitting diodes by inserting A1GaN-GaN short-period superlattices in GaN underlayers",
abstract = "We report the influence of short-period superlattice (SPSL)-inserted structures in the underlying undoped GaN on the characteristics of GaN-based light-emitting diodes (LEDs). The measurements of current-voltage (I-V) curves indicate that GaN-based LEDs having pseudomorphic Al 0.3Ga 0.7 N(2 nm)-GaN(2 nm) SPSL-inserted structures exhibit improvements in device characteristics with the best LED being inserted with two sets of five-pair Al 0.3Ga 0.7 N(2 nm)-GaN(2 nm) SPSL structure. Based upon the results of etch pit counts, double-crystal X-ray diffraction measurements and transmission electron microscopic observations of the GaN-based LEDs, it was found that the Al 0.3Ga 0.7 N(2 nm)-GaN(2 nm) SPSL-inserted structures tended to serve as threading dislocation filters in the LEDs so that the improved I-V characteristics were achieved.",
keywords = "GaN, Light-emitting diode (LED), Short-period superlattice (SPSL)",
author = "Wang, {Cheng Liang} and Gong, {Jyh Rong} and Yeh, {Ming Fa} and Wu, {Bor Jen} and Liao, {Wei Tsai} and Lin, {Tai Yuan} and Lin, {Chung Kwei}",
year = "2006",
month = "7",
day = "15",
doi = "10.1109/LPT.2006.877587",
language = "English",
volume = "18",
pages = "1497--1499",
journal = "IEEE Photonics Technology Letters",
issn = "1041-1135",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "14",

}

TY - JOUR

T1 - Improvement in the characteristics of GaN-based light-emitting diodes by inserting A1GaN-GaN short-period superlattices in GaN underlayers

AU - Wang, Cheng Liang

AU - Gong, Jyh Rong

AU - Yeh, Ming Fa

AU - Wu, Bor Jen

AU - Liao, Wei Tsai

AU - Lin, Tai Yuan

AU - Lin, Chung Kwei

PY - 2006/7/15

Y1 - 2006/7/15

N2 - We report the influence of short-period superlattice (SPSL)-inserted structures in the underlying undoped GaN on the characteristics of GaN-based light-emitting diodes (LEDs). The measurements of current-voltage (I-V) curves indicate that GaN-based LEDs having pseudomorphic Al 0.3Ga 0.7 N(2 nm)-GaN(2 nm) SPSL-inserted structures exhibit improvements in device characteristics with the best LED being inserted with two sets of five-pair Al 0.3Ga 0.7 N(2 nm)-GaN(2 nm) SPSL structure. Based upon the results of etch pit counts, double-crystal X-ray diffraction measurements and transmission electron microscopic observations of the GaN-based LEDs, it was found that the Al 0.3Ga 0.7 N(2 nm)-GaN(2 nm) SPSL-inserted structures tended to serve as threading dislocation filters in the LEDs so that the improved I-V characteristics were achieved.

AB - We report the influence of short-period superlattice (SPSL)-inserted structures in the underlying undoped GaN on the characteristics of GaN-based light-emitting diodes (LEDs). The measurements of current-voltage (I-V) curves indicate that GaN-based LEDs having pseudomorphic Al 0.3Ga 0.7 N(2 nm)-GaN(2 nm) SPSL-inserted structures exhibit improvements in device characteristics with the best LED being inserted with two sets of five-pair Al 0.3Ga 0.7 N(2 nm)-GaN(2 nm) SPSL structure. Based upon the results of etch pit counts, double-crystal X-ray diffraction measurements and transmission electron microscopic observations of the GaN-based LEDs, it was found that the Al 0.3Ga 0.7 N(2 nm)-GaN(2 nm) SPSL-inserted structures tended to serve as threading dislocation filters in the LEDs so that the improved I-V characteristics were achieved.

KW - GaN

KW - Light-emitting diode (LED)

KW - Short-period superlattice (SPSL)

UR - http://www.scopus.com/inward/record.url?scp=33745601100&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33745601100&partnerID=8YFLogxK

U2 - 10.1109/LPT.2006.877587

DO - 10.1109/LPT.2006.877587

M3 - Article

VL - 18

SP - 1497

EP - 1499

JO - IEEE Photonics Technology Letters

JF - IEEE Photonics Technology Letters

SN - 1041-1135

IS - 14

ER -