Improvement in the characteristics of GaN-based light-emitting diodes by inserting A1GaN-GaN short-period superlattices in GaN underlayers

Cheng Liang Wang, Jyh Rong Gong, Ming Fa Yeh, Bor Jen Wu, Wei Tsai Liao, Tai Yuan Lin, Chung Kwei Lin

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

We report the influence of short-period superlattice (SPSL)-inserted structures in the underlying undoped GaN on the characteristics of GaN-based light-emitting diodes (LEDs). The measurements of current-voltage (I-V) curves indicate that GaN-based LEDs having pseudomorphic Al 0.3Ga 0.7 N(2 nm)-GaN(2 nm) SPSL-inserted structures exhibit improvements in device characteristics with the best LED being inserted with two sets of five-pair Al 0.3Ga 0.7 N(2 nm)-GaN(2 nm) SPSL structure. Based upon the results of etch pit counts, double-crystal X-ray diffraction measurements and transmission electron microscopic observations of the GaN-based LEDs, it was found that the Al 0.3Ga 0.7 N(2 nm)-GaN(2 nm) SPSL-inserted structures tended to serve as threading dislocation filters in the LEDs so that the improved I-V characteristics were achieved.

Original languageEnglish
Pages (from-to)1497-1499
Number of pages3
JournalIEEE Photonics Technology Letters
Volume18
Issue number14
DOIs
Publication statusPublished - Jul 15 2006
Externally publishedYes

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Keywords

  • GaN
  • Light-emitting diode (LED)
  • Short-period superlattice (SPSL)

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Atomic and Molecular Physics, and Optics
  • Physics and Astronomy (miscellaneous)

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