Improved TaN barrier layer against Cu diffusion by formation of an amorphous layer using plasma treatment

Keng Liang Ou, Wen Fa Wu, Chang Pin Chou, Shi Yung Chiou, Chi Chang Wu

Research output: Contribution to journalArticle

15 Citations (Scopus)

Abstract

The effectiveness of tantalum nitride with N2 or O2 plasma treatment as a diffusion barrier between copper and silicon were investigated. As such, an amorphous layer was found to form on the surface of the TaN film after the plasma treatment. The oxygen and nitrogen bonding states were observed for O2 and N2 plasma-treated TaN films. Thus, thermal stabilities of plasma-treated barriers TaN(N)/TaN and TaN(O)/TaN were said to be better than those of untreated barriers TaN(10 nm) and TaN(50 nm).

Original languageEnglish
Pages (from-to)2154-2161
Number of pages8
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume20
Issue number5
DOIs
Publication statusPublished - Sep 2002
Externally publishedYes

Fingerprint

plasma layers
barrier layers
Plasmas
tantalum nitrides
Diffusion barriers
Tantalum
Nitrides
Thermodynamic stability
thermal stability
Nitrogen
Copper
nitrogen
copper
Silicon
Oxygen
silicon
oxygen

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Surfaces and Interfaces
  • Physics and Astronomy (miscellaneous)

Cite this

Improved TaN barrier layer against Cu diffusion by formation of an amorphous layer using plasma treatment. / Ou, Keng Liang; Wu, Wen Fa; Chou, Chang Pin; Chiou, Shi Yung; Wu, Chi Chang.

In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 20, No. 5, 09.2002, p. 2154-2161.

Research output: Contribution to journalArticle

Ou, Keng Liang ; Wu, Wen Fa ; Chou, Chang Pin ; Chiou, Shi Yung ; Wu, Chi Chang. / Improved TaN barrier layer against Cu diffusion by formation of an amorphous layer using plasma treatment. In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 2002 ; Vol. 20, No. 5. pp. 2154-2161.
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