Improved TaN barrier layer against Cu diffusion by formation of an amorphous layer using plasma treatment

Keng Liang Ou, Wen Fa Wu, Chang Pin Chou, Shi Yung Chiou, Chi Chang Wu

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17 Citations (Scopus)


The effectiveness of tantalum nitride with N2 or O2 plasma treatment as a diffusion barrier between copper and silicon were investigated. As such, an amorphous layer was found to form on the surface of the TaN film after the plasma treatment. The oxygen and nitrogen bonding states were observed for O2 and N2 plasma-treated TaN films. Thus, thermal stabilities of plasma-treated barriers TaN(N)/TaN and TaN(O)/TaN were said to be better than those of untreated barriers TaN(10 nm) and TaN(50 nm).

Original languageEnglish
Pages (from-to)2154-2161
Number of pages8
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Issue number5
Publication statusPublished - Sep 2002
Externally publishedYes


ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Surfaces and Interfaces
  • Physics and Astronomy (miscellaneous)

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