Improved efficiency of a large-area Cu(In,Ga)Se 2 solar cell by a nontoxic hydrogen-assisted solid Se vapor selenization process

Tsung Ta Wu, Fan Hu, Jyun Hong Huang, Chia Ho Chang, Chih Chung Lai, Yu Ting Yen, Hou Ying Huang, Hwen Fen Hong, Zhiming M. Wang, Chang Hong Shen, Jia Min Shieh, Yu Lun Chueh

Research output: Contribution to journalArticle

17 Citations (Scopus)

Abstract

A nontoxic hydrogen-assisted solid Se vapor selenization process (HASVS) technique to achieve a large-area (40 × 30 cm 2 ) Cu(In,Ga)Se 2 (CIGS) solar panel with enhanced efficiencies from 7.1 to 10.8% (12.0% for active area) was demonstrated. The remarkable improvement of efficiency and fill factor comes from improved open circuit voltage (V oc ) and reduced dark current due to (1) decreased interface recombination raised from the formation of a widened buried homojunction with n-type Cd Cu participation and (2) enhanced separation of electron and hole carriers resulting from the accumulation of Na atoms on the surface of the CIGS film. The effects of microstructural, compositional, and electrical characteristics with hydrogen-assisted Se vapor selenization, including interdiffusion of atoms and formation of buried homojunction, were examined in detail. This methodology can be also applied to CIS (CuInSe 2 ) thin film solar cells with enhanced efficiencies from 5.3% to 8.5% (9.4% for active area) and provides a facile approach to improve quality of CIGS and stimulate the nontoxic progress in the large scale CIGS PV industry.

Original languageEnglish
Pages (from-to)4842-4849
Number of pages8
JournalACS Applied Materials and Interfaces
Volume6
Issue number7
DOIs
Publication statusPublished - Apr 9 2014
Externally publishedYes

Fingerprint

Hydrogen
Solar cells
Vapors
Atoms
Dark currents
Open circuit voltage
Electrons
Industry
Thin film solar cells

Keywords

  • buried homojunction
  • hydrogen-assisted selenization
  • Na diffusion

ASJC Scopus subject areas

  • Materials Science(all)

Cite this

Improved efficiency of a large-area Cu(In,Ga)Se 2 solar cell by a nontoxic hydrogen-assisted solid Se vapor selenization process. / Wu, Tsung Ta; Hu, Fan; Huang, Jyun Hong; Chang, Chia Ho; Lai, Chih Chung; Yen, Yu Ting; Huang, Hou Ying; Hong, Hwen Fen; Wang, Zhiming M.; Shen, Chang Hong; Shieh, Jia Min; Chueh, Yu Lun.

In: ACS Applied Materials and Interfaces, Vol. 6, No. 7, 09.04.2014, p. 4842-4849.

Research output: Contribution to journalArticle

Wu, TT, Hu, F, Huang, JH, Chang, CH, Lai, CC, Yen, YT, Huang, HY, Hong, HF, Wang, ZM, Shen, CH, Shieh, JM & Chueh, YL 2014, 'Improved efficiency of a large-area Cu(In,Ga)Se 2 solar cell by a nontoxic hydrogen-assisted solid Se vapor selenization process', ACS Applied Materials and Interfaces, vol. 6, no. 7, pp. 4842-4849. https://doi.org/10.1021/am405780z
Wu, Tsung Ta ; Hu, Fan ; Huang, Jyun Hong ; Chang, Chia Ho ; Lai, Chih Chung ; Yen, Yu Ting ; Huang, Hou Ying ; Hong, Hwen Fen ; Wang, Zhiming M. ; Shen, Chang Hong ; Shieh, Jia Min ; Chueh, Yu Lun. / Improved efficiency of a large-area Cu(In,Ga)Se 2 solar cell by a nontoxic hydrogen-assisted solid Se vapor selenization process. In: ACS Applied Materials and Interfaces. 2014 ; Vol. 6, No. 7. pp. 4842-4849.
@article{4bc4b54c1a2649ebbfe30d2ee08855e1,
title = "Improved efficiency of a large-area Cu(In,Ga)Se 2 solar cell by a nontoxic hydrogen-assisted solid Se vapor selenization process",
abstract = "A nontoxic hydrogen-assisted solid Se vapor selenization process (HASVS) technique to achieve a large-area (40 × 30 cm 2 ) Cu(In,Ga)Se 2 (CIGS) solar panel with enhanced efficiencies from 7.1 to 10.8{\%} (12.0{\%} for active area) was demonstrated. The remarkable improvement of efficiency and fill factor comes from improved open circuit voltage (V oc ) and reduced dark current due to (1) decreased interface recombination raised from the formation of a widened buried homojunction with n-type Cd Cu participation and (2) enhanced separation of electron and hole carriers resulting from the accumulation of Na atoms on the surface of the CIGS film. The effects of microstructural, compositional, and electrical characteristics with hydrogen-assisted Se vapor selenization, including interdiffusion of atoms and formation of buried homojunction, were examined in detail. This methodology can be also applied to CIS (CuInSe 2 ) thin film solar cells with enhanced efficiencies from 5.3{\%} to 8.5{\%} (9.4{\%} for active area) and provides a facile approach to improve quality of CIGS and stimulate the nontoxic progress in the large scale CIGS PV industry.",
keywords = "buried homojunction, hydrogen-assisted selenization, Na diffusion",
author = "Wu, {Tsung Ta} and Fan Hu and Huang, {Jyun Hong} and Chang, {Chia Ho} and Lai, {Chih Chung} and Yen, {Yu Ting} and Huang, {Hou Ying} and Hong, {Hwen Fen} and Wang, {Zhiming M.} and Shen, {Chang Hong} and Shieh, {Jia Min} and Chueh, {Yu Lun}",
year = "2014",
month = "4",
day = "9",
doi = "10.1021/am405780z",
language = "English",
volume = "6",
pages = "4842--4849",
journal = "ACS applied materials & interfaces",
issn = "1944-8244",
publisher = "American Chemical Society",
number = "7",

}

TY - JOUR

T1 - Improved efficiency of a large-area Cu(In,Ga)Se 2 solar cell by a nontoxic hydrogen-assisted solid Se vapor selenization process

AU - Wu, Tsung Ta

AU - Hu, Fan

AU - Huang, Jyun Hong

AU - Chang, Chia Ho

AU - Lai, Chih Chung

AU - Yen, Yu Ting

AU - Huang, Hou Ying

AU - Hong, Hwen Fen

AU - Wang, Zhiming M.

AU - Shen, Chang Hong

AU - Shieh, Jia Min

AU - Chueh, Yu Lun

PY - 2014/4/9

Y1 - 2014/4/9

N2 - A nontoxic hydrogen-assisted solid Se vapor selenization process (HASVS) technique to achieve a large-area (40 × 30 cm 2 ) Cu(In,Ga)Se 2 (CIGS) solar panel with enhanced efficiencies from 7.1 to 10.8% (12.0% for active area) was demonstrated. The remarkable improvement of efficiency and fill factor comes from improved open circuit voltage (V oc ) and reduced dark current due to (1) decreased interface recombination raised from the formation of a widened buried homojunction with n-type Cd Cu participation and (2) enhanced separation of electron and hole carriers resulting from the accumulation of Na atoms on the surface of the CIGS film. The effects of microstructural, compositional, and electrical characteristics with hydrogen-assisted Se vapor selenization, including interdiffusion of atoms and formation of buried homojunction, were examined in detail. This methodology can be also applied to CIS (CuInSe 2 ) thin film solar cells with enhanced efficiencies from 5.3% to 8.5% (9.4% for active area) and provides a facile approach to improve quality of CIGS and stimulate the nontoxic progress in the large scale CIGS PV industry.

AB - A nontoxic hydrogen-assisted solid Se vapor selenization process (HASVS) technique to achieve a large-area (40 × 30 cm 2 ) Cu(In,Ga)Se 2 (CIGS) solar panel with enhanced efficiencies from 7.1 to 10.8% (12.0% for active area) was demonstrated. The remarkable improvement of efficiency and fill factor comes from improved open circuit voltage (V oc ) and reduced dark current due to (1) decreased interface recombination raised from the formation of a widened buried homojunction with n-type Cd Cu participation and (2) enhanced separation of electron and hole carriers resulting from the accumulation of Na atoms on the surface of the CIGS film. The effects of microstructural, compositional, and electrical characteristics with hydrogen-assisted Se vapor selenization, including interdiffusion of atoms and formation of buried homojunction, were examined in detail. This methodology can be also applied to CIS (CuInSe 2 ) thin film solar cells with enhanced efficiencies from 5.3% to 8.5% (9.4% for active area) and provides a facile approach to improve quality of CIGS and stimulate the nontoxic progress in the large scale CIGS PV industry.

KW - buried homojunction

KW - hydrogen-assisted selenization

KW - Na diffusion

UR - http://www.scopus.com/inward/record.url?scp=84898437835&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84898437835&partnerID=8YFLogxK

U2 - 10.1021/am405780z

DO - 10.1021/am405780z

M3 - Article

VL - 6

SP - 4842

EP - 4849

JO - ACS applied materials & interfaces

JF - ACS applied materials & interfaces

SN - 1944-8244

IS - 7

ER -