Impact of electrode surface morphology in ZnO-based resistive random accessmemory fabricated using the Cu chemical displacement technique

Chi Chang Wu, Hsin Chiang You, Yu Hsien Lin, Chia Jung Yang, Yu Ping Hsiao, Tun Po Liao, Wen Luh Yang

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1 Citation (Scopus)


Electrochemical-metallization-type resistive random access memories (ReRAMs) show promising performance as next-generation nonvolatile memory. In this paper, the Cu chemical displacement technique (CDT) is used to form the bottom electrode of ReRAM devices. Compared with conventional deposition methods, the Cu-CDT method has numerous advantages for ReRAM fabrication, including low cost, low temperature fabrication, and the provision of unconsolidated Cu film and large surface roughness. Moreover, the Cu-CDT method is a favorable candidate for overcoming the Cu etching problem and is thus suitable for fabricating ReRAM devices. Using this technique, the surface morphology of a thin Cu film can be easily controlled. The obtained results show that the electric fields during the Forming and SET operations decreased, and the on-state current increased in the RESET operation, as the Cu-CDT displacement time was increased. The Cu-CDT samples exhibited a low operation field, large memory window ( > 106), and excellent endurance switching cycle characteristics. Moreover, this paper proposes a model to explain the electrical characteristics of ReRAM, which are dependent on the surface morphology.

Original languageEnglish
Article number265
Issue number2
Publication statusPublished - Feb 9 2018



  • Chemical displacement
  • Cu-CDT
  • ECM
  • ReRAM
  • Resistive memory

ASJC Scopus subject areas

  • Materials Science(all)

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