Impact of electrode surface morphology in ZnO-based resistive random accessmemory fabricated using the Cu chemical displacement technique

Chi Chang Wu, Hsin Chiang You, Yu Hsien Lin, Chia Jung Yang, Yu Ping Hsiao, Tun Po Liao, Wen Luh Yang

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

Electrochemical-metallization-type resistive random access memories (ReRAMs) show promising performance as next-generation nonvolatile memory. In this paper, the Cu chemical displacement technique (CDT) is used to form the bottom electrode of ReRAM devices. Compared with conventional deposition methods, the Cu-CDT method has numerous advantages for ReRAM fabrication, including low cost, low temperature fabrication, and the provision of unconsolidated Cu film and large surface roughness. Moreover, the Cu-CDT method is a favorable candidate for overcoming the Cu etching problem and is thus suitable for fabricating ReRAM devices. Using this technique, the surface morphology of a thin Cu film can be easily controlled. The obtained results show that the electric fields during the Forming and SET operations decreased, and the on-state current increased in the RESET operation, as the Cu-CDT displacement time was increased. The Cu-CDT samples exhibited a low operation field, large memory window ( > 106), and excellent endurance switching cycle characteristics. Moreover, this paper proposes a model to explain the electrical characteristics of ReRAM, which are dependent on the surface morphology.

Original languageEnglish
Article number265
JournalMaterials
Volume11
Issue number2
DOIs
Publication statusPublished - Feb 9 2018

Fingerprint

Surface morphology
Data storage equipment
Electrodes
Fabrication
Metallizing
Etching
Durability
Surface roughness
Electric fields
Costs

Keywords

  • Chemical displacement
  • Cu-CDT
  • ECM
  • ReRAM
  • Resistive memory

ASJC Scopus subject areas

  • Materials Science(all)

Cite this

Impact of electrode surface morphology in ZnO-based resistive random accessmemory fabricated using the Cu chemical displacement technique. / Wu, Chi Chang; You, Hsin Chiang; Lin, Yu Hsien; Yang, Chia Jung; Hsiao, Yu Ping; Liao, Tun Po; Yang, Wen Luh.

In: Materials, Vol. 11, No. 2, 265, 09.02.2018.

Research output: Contribution to journalArticle

Wu, Chi Chang ; You, Hsin Chiang ; Lin, Yu Hsien ; Yang, Chia Jung ; Hsiao, Yu Ping ; Liao, Tun Po ; Yang, Wen Luh. / Impact of electrode surface morphology in ZnO-based resistive random accessmemory fabricated using the Cu chemical displacement technique. In: Materials. 2018 ; Vol. 11, No. 2.
@article{4b6aee6f2520425b86906c8ea7a0a8b5,
title = "Impact of electrode surface morphology in ZnO-based resistive random accessmemory fabricated using the Cu chemical displacement technique",
abstract = "Electrochemical-metallization-type resistive random access memories (ReRAMs) show promising performance as next-generation nonvolatile memory. In this paper, the Cu chemical displacement technique (CDT) is used to form the bottom electrode of ReRAM devices. Compared with conventional deposition methods, the Cu-CDT method has numerous advantages for ReRAM fabrication, including low cost, low temperature fabrication, and the provision of unconsolidated Cu film and large surface roughness. Moreover, the Cu-CDT method is a favorable candidate for overcoming the Cu etching problem and is thus suitable for fabricating ReRAM devices. Using this technique, the surface morphology of a thin Cu film can be easily controlled. The obtained results show that the electric fields during the Forming and SET operations decreased, and the on-state current increased in the RESET operation, as the Cu-CDT displacement time was increased. The Cu-CDT samples exhibited a low operation field, large memory window ( > 106), and excellent endurance switching cycle characteristics. Moreover, this paper proposes a model to explain the electrical characteristics of ReRAM, which are dependent on the surface morphology.",
keywords = "Chemical displacement, Cu-CDT, ECM, ReRAM, Resistive memory",
author = "Wu, {Chi Chang} and You, {Hsin Chiang} and Lin, {Yu Hsien} and Yang, {Chia Jung} and Hsiao, {Yu Ping} and Liao, {Tun Po} and Yang, {Wen Luh}",
year = "2018",
month = "2",
day = "9",
doi = "10.3390/ma11020265",
language = "English",
volume = "11",
journal = "Materials",
issn = "1996-1944",
publisher = "MDPI AG",
number = "2",

}

TY - JOUR

T1 - Impact of electrode surface morphology in ZnO-based resistive random accessmemory fabricated using the Cu chemical displacement technique

AU - Wu, Chi Chang

AU - You, Hsin Chiang

AU - Lin, Yu Hsien

AU - Yang, Chia Jung

AU - Hsiao, Yu Ping

AU - Liao, Tun Po

AU - Yang, Wen Luh

PY - 2018/2/9

Y1 - 2018/2/9

N2 - Electrochemical-metallization-type resistive random access memories (ReRAMs) show promising performance as next-generation nonvolatile memory. In this paper, the Cu chemical displacement technique (CDT) is used to form the bottom electrode of ReRAM devices. Compared with conventional deposition methods, the Cu-CDT method has numerous advantages for ReRAM fabrication, including low cost, low temperature fabrication, and the provision of unconsolidated Cu film and large surface roughness. Moreover, the Cu-CDT method is a favorable candidate for overcoming the Cu etching problem and is thus suitable for fabricating ReRAM devices. Using this technique, the surface morphology of a thin Cu film can be easily controlled. The obtained results show that the electric fields during the Forming and SET operations decreased, and the on-state current increased in the RESET operation, as the Cu-CDT displacement time was increased. The Cu-CDT samples exhibited a low operation field, large memory window ( > 106), and excellent endurance switching cycle characteristics. Moreover, this paper proposes a model to explain the electrical characteristics of ReRAM, which are dependent on the surface morphology.

AB - Electrochemical-metallization-type resistive random access memories (ReRAMs) show promising performance as next-generation nonvolatile memory. In this paper, the Cu chemical displacement technique (CDT) is used to form the bottom electrode of ReRAM devices. Compared with conventional deposition methods, the Cu-CDT method has numerous advantages for ReRAM fabrication, including low cost, low temperature fabrication, and the provision of unconsolidated Cu film and large surface roughness. Moreover, the Cu-CDT method is a favorable candidate for overcoming the Cu etching problem and is thus suitable for fabricating ReRAM devices. Using this technique, the surface morphology of a thin Cu film can be easily controlled. The obtained results show that the electric fields during the Forming and SET operations decreased, and the on-state current increased in the RESET operation, as the Cu-CDT displacement time was increased. The Cu-CDT samples exhibited a low operation field, large memory window ( > 106), and excellent endurance switching cycle characteristics. Moreover, this paper proposes a model to explain the electrical characteristics of ReRAM, which are dependent on the surface morphology.

KW - Chemical displacement

KW - Cu-CDT

KW - ECM

KW - ReRAM

KW - Resistive memory

UR - http://www.scopus.com/inward/record.url?scp=85041741628&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85041741628&partnerID=8YFLogxK

U2 - 10.3390/ma11020265

DO - 10.3390/ma11020265

M3 - Article

AN - SCOPUS:85041741628

VL - 11

JO - Materials

JF - Materials

SN - 1996-1944

IS - 2

M1 - 265

ER -