High Cu diffusion resistance in ultrathin multiquasi-amorphous CVD-Ti/TiNx films

Keng Liang Ou, Shi Yung Chiou, Ming Hong Lin

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

Titanium thin films are used as diffusion barriers between a copper interconnect layer and a silicon substrate. Plasma treatment, by modifying the film microstructure, can improve the film properties and its electrical conductivity. To clarify the correlation, the microstructure of a series of Ti thin films deposited using a metal-chemical vapor deposition (CVD) technique have been analyzed by sheet resistance, X-ray diffraction, and transmission electron microscopy (TEM). TEM analysis results show that films are made of quasi-amorphous thin films, and no texture is observed as no plasma is applied. The titanium films with plasma treatment are actually a multilayer structure. The chlorine content in the film is reduced with plasma treatments. Copper barrier performances of ultrathin 10 run film of plasma enhanced CVD-Ti, Ti/TiNx, Ti/Ti(H), Ti/Ti(N), and physical vapor deposited-Ti have been investigated. Thermal stability tests, including Rs measurement and XR TEM observation, showed comparable performance between the 10 nm Ti/Ti(H) and Ti/Ti(N), whereas the thermal stability of 10 nm Ti/TiNx barrier was superior to any other barrier films. It also reveals that hydrogen radicals can reduce the chlorine concentration, and nitrogen radicals and ions are attributed to nitridation formation. It is believed that hydrogen plays an important role in the decrease of chlorine concentration and the nitridation effect promotes thermal stability against copper diffusion.

Original languageEnglish
JournalJournal of the Electrochemical Society
Volume151
Issue number11
DOIs
Publication statusPublished - 2004

Fingerprint

Chemical vapor deposition
vapor deposition
Chlorine
chlorine
Plasmas
Copper
Thermodynamic stability
thermal stability
Nitridation
Transmission electron microscopy
Titanium
Thin films
copper
transmission electron microscopy
Hydrogen
thin films
titanium
stability tests
microstructure
Microstructure

ASJC Scopus subject areas

  • Electrochemistry
  • Surfaces, Coatings and Films
  • Surfaces and Interfaces

Cite this

High Cu diffusion resistance in ultrathin multiquasi-amorphous CVD-Ti/TiNx films. / Ou, Keng Liang; Chiou, Shi Yung; Lin, Ming Hong.

In: Journal of the Electrochemical Society, Vol. 151, No. 11, 2004.

Research output: Contribution to journalArticle

Ou, Keng Liang ; Chiou, Shi Yung ; Lin, Ming Hong. / High Cu diffusion resistance in ultrathin multiquasi-amorphous CVD-Ti/TiNx films. In: Journal of the Electrochemical Society. 2004 ; Vol. 151, No. 11.
@article{b65b9b0470f34396b5209b43e0e8eec6,
title = "High Cu diffusion resistance in ultrathin multiquasi-amorphous CVD-Ti/TiNx films",
abstract = "Titanium thin films are used as diffusion barriers between a copper interconnect layer and a silicon substrate. Plasma treatment, by modifying the film microstructure, can improve the film properties and its electrical conductivity. To clarify the correlation, the microstructure of a series of Ti thin films deposited using a metal-chemical vapor deposition (CVD) technique have been analyzed by sheet resistance, X-ray diffraction, and transmission electron microscopy (TEM). TEM analysis results show that films are made of quasi-amorphous thin films, and no texture is observed as no plasma is applied. The titanium films with plasma treatment are actually a multilayer structure. The chlorine content in the film is reduced with plasma treatments. Copper barrier performances of ultrathin 10 run film of plasma enhanced CVD-Ti, Ti/TiNx, Ti/Ti(H), Ti/Ti(N), and physical vapor deposited-Ti have been investigated. Thermal stability tests, including Rs measurement and XR TEM observation, showed comparable performance between the 10 nm Ti/Ti(H) and Ti/Ti(N), whereas the thermal stability of 10 nm Ti/TiNx barrier was superior to any other barrier films. It also reveals that hydrogen radicals can reduce the chlorine concentration, and nitrogen radicals and ions are attributed to nitridation formation. It is believed that hydrogen plays an important role in the decrease of chlorine concentration and the nitridation effect promotes thermal stability against copper diffusion.",
author = "Ou, {Keng Liang} and Chiou, {Shi Yung} and Lin, {Ming Hong}",
year = "2004",
doi = "10.1149/1.1801393",
language = "English",
volume = "151",
journal = "Journal of the Electrochemical Society",
issn = "0013-4651",
publisher = "Electrochemical Society, Inc.",
number = "11",

}

TY - JOUR

T1 - High Cu diffusion resistance in ultrathin multiquasi-amorphous CVD-Ti/TiNx films

AU - Ou, Keng Liang

AU - Chiou, Shi Yung

AU - Lin, Ming Hong

PY - 2004

Y1 - 2004

N2 - Titanium thin films are used as diffusion barriers between a copper interconnect layer and a silicon substrate. Plasma treatment, by modifying the film microstructure, can improve the film properties and its electrical conductivity. To clarify the correlation, the microstructure of a series of Ti thin films deposited using a metal-chemical vapor deposition (CVD) technique have been analyzed by sheet resistance, X-ray diffraction, and transmission electron microscopy (TEM). TEM analysis results show that films are made of quasi-amorphous thin films, and no texture is observed as no plasma is applied. The titanium films with plasma treatment are actually a multilayer structure. The chlorine content in the film is reduced with plasma treatments. Copper barrier performances of ultrathin 10 run film of plasma enhanced CVD-Ti, Ti/TiNx, Ti/Ti(H), Ti/Ti(N), and physical vapor deposited-Ti have been investigated. Thermal stability tests, including Rs measurement and XR TEM observation, showed comparable performance between the 10 nm Ti/Ti(H) and Ti/Ti(N), whereas the thermal stability of 10 nm Ti/TiNx barrier was superior to any other barrier films. It also reveals that hydrogen radicals can reduce the chlorine concentration, and nitrogen radicals and ions are attributed to nitridation formation. It is believed that hydrogen plays an important role in the decrease of chlorine concentration and the nitridation effect promotes thermal stability against copper diffusion.

AB - Titanium thin films are used as diffusion barriers between a copper interconnect layer and a silicon substrate. Plasma treatment, by modifying the film microstructure, can improve the film properties and its electrical conductivity. To clarify the correlation, the microstructure of a series of Ti thin films deposited using a metal-chemical vapor deposition (CVD) technique have been analyzed by sheet resistance, X-ray diffraction, and transmission electron microscopy (TEM). TEM analysis results show that films are made of quasi-amorphous thin films, and no texture is observed as no plasma is applied. The titanium films with plasma treatment are actually a multilayer structure. The chlorine content in the film is reduced with plasma treatments. Copper barrier performances of ultrathin 10 run film of plasma enhanced CVD-Ti, Ti/TiNx, Ti/Ti(H), Ti/Ti(N), and physical vapor deposited-Ti have been investigated. Thermal stability tests, including Rs measurement and XR TEM observation, showed comparable performance between the 10 nm Ti/Ti(H) and Ti/Ti(N), whereas the thermal stability of 10 nm Ti/TiNx barrier was superior to any other barrier films. It also reveals that hydrogen radicals can reduce the chlorine concentration, and nitrogen radicals and ions are attributed to nitridation formation. It is believed that hydrogen plays an important role in the decrease of chlorine concentration and the nitridation effect promotes thermal stability against copper diffusion.

UR - http://www.scopus.com/inward/record.url?scp=10944230958&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=10944230958&partnerID=8YFLogxK

U2 - 10.1149/1.1801393

DO - 10.1149/1.1801393

M3 - Article

AN - SCOPUS:10944230958

VL - 151

JO - Journal of the Electrochemical Society

JF - Journal of the Electrochemical Society

SN - 0013-4651

IS - 11

ER -