Fully transparent resistive memory employing graphene electrodes for eliminating undesired surface effects

Po Kang Yang, Wen Yuan Chang, Po Yuan Teng, Shuo Fang Jeng, Su Jien Lin, Po Wen Chiu, Jr Hau He

Research output: Contribution to journalArticle

48 Citations (Scopus)


A ZnO-based transparent resistance random access memory (TRRAM) employs atomic layered graphene exhibiting not only excellent transparency (less than 2% absorptance by graphene) but also reversible resistive switching characteristics. The statistical analysis including cycle-to-cycle and cell-to-cell tests for almost 100 cells shows that graphene plays a significant role to suppress the surface effect, giving rise to the notable increase in the switching yield and the insensitivity to the environmental atmosphere. The resistance variation of high-resistance state of ZnO is greatly suppressed by covering graphene as well. The device reliability investigation, such as the endurance more than 102 cycles and the retention time longer than 104 s, reveals the robust passivation of graphene for TRRAM applications. The obtained insights show guidelines not only for TRRAM device design and optimization against the undesired switching parameter variations but also for developing practically useful applications of graphene.

Original languageEnglish
Article number6517461
Pages (from-to)1732-1739
Number of pages8
JournalProceedings of the IEEE
Issue number7
Publication statusPublished - May 27 2013
Externally publishedYes



  • Graphene
  • resistive switching
  • surface effect
  • transparent resistance random access memory (TRRAM)

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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