Facile sol-gel preparation of nanocrystal embedded thin film material for memory device

Chi Chang Wu; Yi Jen Tsai; Pin Lin Liu; Wen Luh Yang; Fu Hsiang Ko

doi:10.1007/s10854-012-0773-y

Facile sol-gel preparation of nanocrystal embedded thin film material for memory device

Chi Chang Wu, Yi Jen Tsai, Pin Lin Liu, Wen Luh Yang, Fu Hsiang Ko

Research output: Contribution to journal › Article

4 Citations (Scopus)

Abstract

A promising charge trapping film with crystal embedded material is proposed for future electronic devices. Instead of conventional high-vacuum and expensive tool, this technique adopts very cheaper process of sol-gel spin-coating for fabrication of thin film material in the charge trapping flash memory (CTFM). The crystal from spinodal phase separation is observed for sol-gel thin film at 900 C annealing, and is strongly related to the thickness of the spin-coated thin film. The morphology of the crystal from the ethanol solvent system is in the isolated form, while from 2-propanol solvent is in the interconnected structure. The sol-gel-derived CTFM from ethanol exhibits the better memory performance of retention times for

Original language	English
Pages (from-to)	423-430
Number of pages	8
Journal	Journal of materials science. Materials in medicine
Volume	24
Issue number	1
DOIs	https://doi.org/10.1007/s10854-012-0773-y
Publication status	Published - Jan 2013

ASJC Scopus subject areas

Condensed Matter Physics
Atomic and Molecular Physics, and Optics
Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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Wu, C. C., Tsai, Y. J., Liu, P. L., Yang, W. L., & Ko, F. H. (2013). Facile sol-gel preparation of nanocrystal embedded thin film material for memory device. Journal of materials science. Materials in medicine, 24(1), 423-430. https://doi.org/10.1007/s10854-012-0773-y

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