Facile sol-gel preparation of nanocrystal embedded thin film material for memory device

Chi Chang Wu; Yi Jen Tsai; Pin Lin Liu; Wen Luh Yang; Fu Hsiang Ko

doi:10.1007/s10854-012-0773-y

Facile sol-gel preparation of nanocrystal embedded thin film material for memory device

Chi Chang Wu, Yi Jen Tsai, Pin Lin Liu, Wen Luh Yang, Fu Hsiang Ko

Research output: Contribution to journal › Article

4 Citations (Scopus)

Abstract

A promising charge trapping film with crystal embedded material is proposed for future electronic devices. Instead of conventional high-vacuum and expensive tool, this technique adopts very cheaper process of sol-gel spin-coating for fabrication of thin film material in the charge trapping flash memory (CTFM). The crystal from spinodal phase separation is observed for sol-gel thin film at 900 C annealing, and is strongly related to the thickness of the spin-coated thin film. The morphology of the crystal from the ethanol solvent system is in the isolated form, while from 2-propanol solvent is in the interconnected structure. The sol-gel-derived CTFM from ethanol exhibits the better memory performance of retention times for

Original language	English
Pages (from-to)	423-430
Number of pages	8
Journal	Journal of materials science. Materials in medicine
Volume	24
Issue number	1
DOIs	https://doi.org/10.1007/s10854-012-0773-y
Publication status	Published - Jan 2013

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ASJC Scopus subject areas

Condensed Matter Physics
Atomic and Molecular Physics, and Optics
Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Cite this

Wu, C. C., Tsai, Y. J., Liu, P. L., Yang, W. L., & Ko, F. H. (2013). Facile sol-gel preparation of nanocrystal embedded thin film material for memory device. Journal of materials science. Materials in medicine, 24(1), 423-430. https://doi.org/10.1007/s10854-012-0773-y

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10.1007/s10854-012-0773-y