Abstract
A promising charge trapping film with crystal embedded material is proposed for future electronic devices. Instead of conventional high-vacuum and expensive tool, this technique adopts very cheaper process of sol-gel spin-coating for fabrication of thin film material in the charge trapping flash memory (CTFM). The crystal from spinodal phase separation is observed for sol-gel thin film at 900 C annealing, and is strongly related to the thickness of the spin-coated thin film. The morphology of the crystal from the ethanol solvent system is in the isolated form, while from 2-propanol solvent is in the interconnected structure. The sol-gel-derived CTFM from ethanol exhibits the better memory performance of retention times for
| Original language | English |
|---|---|
| Pages (from-to) | 423-430 |
| Number of pages | 8 |
| Journal | Journal of materials science. Materials in medicine |
| Volume | 24 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - Jan 2013 |
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ASJC Scopus subject areas
- Condensed Matter Physics
- Atomic and Molecular Physics, and Optics
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering
Cite this
Facile sol-gel preparation of nanocrystal embedded thin film material for memory device. / Wu, Chi Chang; Tsai, Yi Jen; Liu, Pin Lin; Yang, Wen Luh; Ko, Fu Hsiang.
In: Journal of materials science. Materials in medicine, Vol. 24, No. 1, 01.2013, p. 423-430.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Facile sol-gel preparation of nanocrystal embedded thin film material for memory device
AU - Wu, Chi Chang
AU - Tsai, Yi Jen
AU - Liu, Pin Lin
AU - Yang, Wen Luh
AU - Ko, Fu Hsiang
PY - 2013/1
Y1 - 2013/1
N2 - A promising charge trapping film with crystal embedded material is proposed for future electronic devices. Instead of conventional high-vacuum and expensive tool, this technique adopts very cheaper process of sol-gel spin-coating for fabrication of thin film material in the charge trapping flash memory (CTFM). The crystal from spinodal phase separation is observed for sol-gel thin film at 900 C annealing, and is strongly related to the thickness of the spin-coated thin film. The morphology of the crystal from the ethanol solvent system is in the isolated form, while from 2-propanol solvent is in the interconnected structure. The sol-gel-derived CTFM from ethanol exhibits the better memory performance of retention times for
AB - A promising charge trapping film with crystal embedded material is proposed for future electronic devices. Instead of conventional high-vacuum and expensive tool, this technique adopts very cheaper process of sol-gel spin-coating for fabrication of thin film material in the charge trapping flash memory (CTFM). The crystal from spinodal phase separation is observed for sol-gel thin film at 900 C annealing, and is strongly related to the thickness of the spin-coated thin film. The morphology of the crystal from the ethanol solvent system is in the isolated form, while from 2-propanol solvent is in the interconnected structure. The sol-gel-derived CTFM from ethanol exhibits the better memory performance of retention times for
UR - http://www.scopus.com/inward/record.url?scp=84871958328&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84871958328&partnerID=8YFLogxK
U2 - 10.1007/s10854-012-0773-y
DO - 10.1007/s10854-012-0773-y
M3 - Article
AN - SCOPUS:84871958328
VL - 24
SP - 423
EP - 430
JO - Journal of Materials Science: Materials in Medicine
JF - Journal of Materials Science: Materials in Medicine
SN - 0957-4522
IS - 1
ER -