Abstract
A promising charge trapping film with crystal embedded material is proposed for future electronic devices. Instead of conventional high-vacuum and expensive tool, this technique adopts very cheaper process of sol-gel spin-coating for fabrication of thin film material in the charge trapping flash memory (CTFM). The crystal from spinodal phase separation is observed for sol-gel thin film at 900 C annealing, and is strongly related to the thickness of the spin-coated thin film. The morphology of the crystal from the ethanol solvent system is in the isolated form, while from 2-propanol solvent is in the interconnected structure. The sol-gel-derived CTFM from ethanol exhibits the better memory performance of retention times for
Original language | English |
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Pages (from-to) | 423-430 |
Number of pages | 8 |
Journal | Journal of materials science. Materials in medicine |
Volume | 24 |
Issue number | 1 |
DOIs | |
Publication status | Published - Jan 2013 |
ASJC Scopus subject areas
- Condensed Matter Physics
- Atomic and Molecular Physics, and Optics
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering