Abstract
The radio-frequency sputter-deposited textured TiN thin films used as diffusion barriers between copper and silicon were evaluated. The evaluations based on differences in sheet resistance, surface morphology and phase transformation induced by annealing Si/TiN (40 nm)/Cu(200 nm) samples suggested that (111) TiN was better diffusion barrier material for copper than (100) TiN. The crystallographic packing and microstructure of the textured diffusion barrier was found to be responsible for difference in barrier effectiveness.
| Original language | English |
|---|---|
| Pages (from-to) | 479-485 |
| Number of pages | 7 |
| Journal | Journal of Vacuum Science and Technology, Part A: Vacuum, Surfaces and Films |
| Volume | 20 |
| Issue number | 2 |
| DOIs | |
| Publication status | Published - Mar 2002 |
| Externally published | Yes |
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ASJC Scopus subject areas
- Surfaces, Coatings and Films
- Surfaces and Interfaces
- Physics and Astronomy (miscellaneous)
Cite this
Evaluation of radio-frequency sputter-deposited textured TiN thin films as diffusion barriers between copper and silicon. / Chen, G. S.; Guo, J. J.; Lin, C. K.; Hsu, Chen Sheng; Yang, L. C.; Fang, J. S.
In: Journal of Vacuum Science and Technology, Part A: Vacuum, Surfaces and Films, Vol. 20, No. 2, 03.2002, p. 479-485.Research output: Contribution to journal › Article
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TY - JOUR
T1 - Evaluation of radio-frequency sputter-deposited textured TiN thin films as diffusion barriers between copper and silicon
AU - Chen, G. S.
AU - Guo, J. J.
AU - Lin, C. K.
AU - Hsu, Chen Sheng
AU - Yang, L. C.
AU - Fang, J. S.
PY - 2002/3
Y1 - 2002/3
N2 - The radio-frequency sputter-deposited textured TiN thin films used as diffusion barriers between copper and silicon were evaluated. The evaluations based on differences in sheet resistance, surface morphology and phase transformation induced by annealing Si/TiN (40 nm)/Cu(200 nm) samples suggested that (111) TiN was better diffusion barrier material for copper than (100) TiN. The crystallographic packing and microstructure of the textured diffusion barrier was found to be responsible for difference in barrier effectiveness.
AB - The radio-frequency sputter-deposited textured TiN thin films used as diffusion barriers between copper and silicon were evaluated. The evaluations based on differences in sheet resistance, surface morphology and phase transformation induced by annealing Si/TiN (40 nm)/Cu(200 nm) samples suggested that (111) TiN was better diffusion barrier material for copper than (100) TiN. The crystallographic packing and microstructure of the textured diffusion barrier was found to be responsible for difference in barrier effectiveness.
UR - http://www.scopus.com/inward/record.url?scp=0036494099&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0036494099&partnerID=8YFLogxK
U2 - 10.1116/1.1450580
DO - 10.1116/1.1450580
M3 - Article
AN - SCOPUS:0036494099
VL - 20
SP - 479
EP - 485
JO - Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
JF - Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
SN - 0734-2101
IS - 2
ER -