Evaluation of radio-frequency sputter-deposited textured TiN thin films as diffusion barriers between copper and silicon

G. S. Chen, J. J. Guo, C. K. Lin, Chen Sheng Hsu, L. C. Yang, J. S. Fang

Research output: Contribution to journalArticle

46 Citations (Scopus)

Abstract

The radio-frequency sputter-deposited textured TiN thin films used as diffusion barriers between copper and silicon were evaluated. The evaluations based on differences in sheet resistance, surface morphology and phase transformation induced by annealing Si/TiN (40 nm)/Cu(200 nm) samples suggested that (111) TiN was better diffusion barrier material for copper than (100) TiN. The crystallographic packing and microstructure of the textured diffusion barrier was found to be responsible for difference in barrier effectiveness.

Original languageEnglish
Pages (from-to)479-485
Number of pages7
JournalJournal of Vacuum Science and Technology, Part A: Vacuum, Surfaces and Films
Volume20
Issue number2
DOIs
Publication statusPublished - Mar 2002
Externally publishedYes

Fingerprint

Diffusion barriers
Silicon
Copper
radio frequencies
Thin films
copper
evaluation
silicon
thin films
Sheet resistance
Surface morphology
Phase transitions
Annealing
phase transformations
Microstructure
microstructure
annealing

ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Surfaces and Interfaces
  • Physics and Astronomy (miscellaneous)

Cite this

Evaluation of radio-frequency sputter-deposited textured TiN thin films as diffusion barriers between copper and silicon. / Chen, G. S.; Guo, J. J.; Lin, C. K.; Hsu, Chen Sheng; Yang, L. C.; Fang, J. S.

In: Journal of Vacuum Science and Technology, Part A: Vacuum, Surfaces and Films, Vol. 20, No. 2, 03.2002, p. 479-485.

Research output: Contribution to journalArticle

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