Abstract
The radio-frequency sputter-deposited textured TiN thin films used as diffusion barriers between copper and silicon were evaluated. The evaluations based on differences in sheet resistance, surface morphology and phase transformation induced by annealing Si/TiN (40 nm)/Cu(200 nm) samples suggested that (111) TiN was better diffusion barrier material for copper than (100) TiN. The crystallographic packing and microstructure of the textured diffusion barrier was found to be responsible for difference in barrier effectiveness.
| Original language | English |
|---|---|
| Pages (from-to) | 479-485 |
| Number of pages | 7 |
| Journal | Journal of Vacuum Science and Technology, Part A: Vacuum, Surfaces and Films |
| Volume | 20 |
| Issue number | 2 |
| DOIs | |
| Publication status | Published - Mar 2002 |
| Externally published | Yes |
ASJC Scopus subject areas
- Surfaces, Coatings and Films
- Surfaces and Interfaces
- Physics and Astronomy (miscellaneous)
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Chen, G. S., Guo, J. J., Lin, C. K., Hsu, C. S., Yang, L. C., & Fang, J. S. (2002). Evaluation of radio-frequency sputter-deposited textured TiN thin films as diffusion barriers between copper and silicon. Journal of Vacuum Science and Technology, Part A: Vacuum, Surfaces and Films, 20(2), 479-485. https://doi.org/10.1116/1.1450580