Enhanced OLED performance upon photolithographic patterning by using an atomic-layer-deposited buffer layer

Chih Yu Chang, Feng Yu Tsai, Syue Jhao Jhuo, Miin Jang Chen

Research output: Contribution to journalArticle

39 Citations (Scopus)

Abstract

This study addresses the problem of patterning-induced degradations to organic light-emitting diodes (OLEDs) by using a thin (10 Å) atomic-layer-deposited (ALD) Al2O3 film as both an electron-injection layer and a protecting layer for the electroluminescent material, poly[1-methoxy-4-(2′-ethyl-hexyloxy)-2,5-phenylene vinylene] (MEH-PPV). With the ALD Al2O3 film, the OLEDs not only withstood an aggressive photolithographic patterning process without any degradation but unprecedentedly showed increased luminous efficiency (by 100%) and lowered turn-on voltage (by 19%) afterward. Although the ALD precursor, trimethylaluminum (TMA), was found to damage the MEH-PPV layer through electrophilic addition to the vinylene groups of MEH-PPV during the deposition of the Al2O3 film, its damaging effect was eliminated by pre-treating the MEH-PPV surface with isopropyl alcohol (IPA), whose hydroxyl groups scavenged TMA throughout the ALD process. The performance of the photo-patterned OLEDs was further improved by using a high-conductivity hole-injection layer, which increased accumulation of holes at the EL-buffer interface to enhance electron injection. The method reported herein improves the applicability of photolithography to OLED fabrication, promising to resolve the issue of patterning that has in part impeded OLED's commercialization.

Original languageEnglish
Pages (from-to)667-672
Number of pages6
JournalOrganic Electronics: physics, materials, applications
Volume9
Issue number5
DOIs
Publication statusPublished - Oct 1 2008
Externally publishedYes

Fingerprint

Organic light emitting diodes (OLED)
Buffer layers
light emitting diodes
buffers
Electron injection
injection
Degradation
2-Propanol
Photolithography
Hydroxyl Radical
degradation
Buffers
Alcohols
isopropyl alcohol
commercialization
photolithography
Fabrication
poly(2-methoxy-5-(2'-ethylhexyloxy)-p-phenylenevinylene)
Electric potential
electrons

Keywords

  • Atomic layer deposition
  • Conjugated polymer
  • Electroluminescence
  • Photolithography

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces, Coatings and Films
  • Condensed Matter Physics
  • Surfaces and Interfaces

Cite this

Enhanced OLED performance upon photolithographic patterning by using an atomic-layer-deposited buffer layer. / Chang, Chih Yu; Tsai, Feng Yu; Jhuo, Syue Jhao; Chen, Miin Jang.

In: Organic Electronics: physics, materials, applications, Vol. 9, No. 5, 01.10.2008, p. 667-672.

Research output: Contribution to journalArticle

@article{dc0b400b1a34473da1b56da4161c4bc8,
title = "Enhanced OLED performance upon photolithographic patterning by using an atomic-layer-deposited buffer layer",
abstract = "This study addresses the problem of patterning-induced degradations to organic light-emitting diodes (OLEDs) by using a thin (10 {\AA}) atomic-layer-deposited (ALD) Al2O3 film as both an electron-injection layer and a protecting layer for the electroluminescent material, poly[1-methoxy-4-(2′-ethyl-hexyloxy)-2,5-phenylene vinylene] (MEH-PPV). With the ALD Al2O3 film, the OLEDs not only withstood an aggressive photolithographic patterning process without any degradation but unprecedentedly showed increased luminous efficiency (by 100{\%}) and lowered turn-on voltage (by 19{\%}) afterward. Although the ALD precursor, trimethylaluminum (TMA), was found to damage the MEH-PPV layer through electrophilic addition to the vinylene groups of MEH-PPV during the deposition of the Al2O3 film, its damaging effect was eliminated by pre-treating the MEH-PPV surface with isopropyl alcohol (IPA), whose hydroxyl groups scavenged TMA throughout the ALD process. The performance of the photo-patterned OLEDs was further improved by using a high-conductivity hole-injection layer, which increased accumulation of holes at the EL-buffer interface to enhance electron injection. The method reported herein improves the applicability of photolithography to OLED fabrication, promising to resolve the issue of patterning that has in part impeded OLED's commercialization.",
keywords = "Atomic layer deposition, Conjugated polymer, Electroluminescence, Photolithography",
author = "Chang, {Chih Yu} and Tsai, {Feng Yu} and Jhuo, {Syue Jhao} and Chen, {Miin Jang}",
year = "2008",
month = "10",
day = "1",
doi = "10.1016/j.orgel.2008.04.009",
language = "English",
volume = "9",
pages = "667--672",
journal = "Organic Electronics",
issn = "1566-1199",
publisher = "Elsevier",
number = "5",

}

TY - JOUR

T1 - Enhanced OLED performance upon photolithographic patterning by using an atomic-layer-deposited buffer layer

AU - Chang, Chih Yu

AU - Tsai, Feng Yu

AU - Jhuo, Syue Jhao

AU - Chen, Miin Jang

PY - 2008/10/1

Y1 - 2008/10/1

N2 - This study addresses the problem of patterning-induced degradations to organic light-emitting diodes (OLEDs) by using a thin (10 Å) atomic-layer-deposited (ALD) Al2O3 film as both an electron-injection layer and a protecting layer for the electroluminescent material, poly[1-methoxy-4-(2′-ethyl-hexyloxy)-2,5-phenylene vinylene] (MEH-PPV). With the ALD Al2O3 film, the OLEDs not only withstood an aggressive photolithographic patterning process without any degradation but unprecedentedly showed increased luminous efficiency (by 100%) and lowered turn-on voltage (by 19%) afterward. Although the ALD precursor, trimethylaluminum (TMA), was found to damage the MEH-PPV layer through electrophilic addition to the vinylene groups of MEH-PPV during the deposition of the Al2O3 film, its damaging effect was eliminated by pre-treating the MEH-PPV surface with isopropyl alcohol (IPA), whose hydroxyl groups scavenged TMA throughout the ALD process. The performance of the photo-patterned OLEDs was further improved by using a high-conductivity hole-injection layer, which increased accumulation of holes at the EL-buffer interface to enhance electron injection. The method reported herein improves the applicability of photolithography to OLED fabrication, promising to resolve the issue of patterning that has in part impeded OLED's commercialization.

AB - This study addresses the problem of patterning-induced degradations to organic light-emitting diodes (OLEDs) by using a thin (10 Å) atomic-layer-deposited (ALD) Al2O3 film as both an electron-injection layer and a protecting layer for the electroluminescent material, poly[1-methoxy-4-(2′-ethyl-hexyloxy)-2,5-phenylene vinylene] (MEH-PPV). With the ALD Al2O3 film, the OLEDs not only withstood an aggressive photolithographic patterning process without any degradation but unprecedentedly showed increased luminous efficiency (by 100%) and lowered turn-on voltage (by 19%) afterward. Although the ALD precursor, trimethylaluminum (TMA), was found to damage the MEH-PPV layer through electrophilic addition to the vinylene groups of MEH-PPV during the deposition of the Al2O3 film, its damaging effect was eliminated by pre-treating the MEH-PPV surface with isopropyl alcohol (IPA), whose hydroxyl groups scavenged TMA throughout the ALD process. The performance of the photo-patterned OLEDs was further improved by using a high-conductivity hole-injection layer, which increased accumulation of holes at the EL-buffer interface to enhance electron injection. The method reported herein improves the applicability of photolithography to OLED fabrication, promising to resolve the issue of patterning that has in part impeded OLED's commercialization.

KW - Atomic layer deposition

KW - Conjugated polymer

KW - Electroluminescence

KW - Photolithography

UR - http://www.scopus.com/inward/record.url?scp=49049100430&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=49049100430&partnerID=8YFLogxK

U2 - 10.1016/j.orgel.2008.04.009

DO - 10.1016/j.orgel.2008.04.009

M3 - Article

AN - SCOPUS:49049100430

VL - 9

SP - 667

EP - 672

JO - Organic Electronics

JF - Organic Electronics

SN - 1566-1199

IS - 5

ER -