Enhanced efficiency in InGaN-based photovoltaic devices combined with nanocrystalline Bi2O3/P3HT heterojunction structures

Chun Feng Lai, Chung-Chieh Chang, Min Hsueh Wen, Chung Kwei Lin, Mau Kuen Wu

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

This study experimentally investigates the ability of Bi2O 3/P3HT heterojunction thin films to improve the power-conversion efficiency of InGaN-based photovoltaic (PV) devices. InGaN-based PV devices combined with Bi2O3/P3HT heterojunctions were prepared using the pulsed laser deposition method. The Bi2O3/P3HT heterojunction creates carriers that combine with excitons through the light-absorbance process, which enhances the power-conversion efficiency of InGaN PV devices by approximately 36%. Thus, these Bi2O 3/P3HT heterojunctions can provide an efficiency improvement in InGaN PV devices and other related solar-cell applications.

Original languageEnglish
Pages (from-to)1133-1136
Number of pages4
JournalPhysica Status Solidi (A) Applications and Materials Science
Volume210
Issue number6
DOIs
Publication statusPublished - Jun 2013

Fingerprint

Heterojunctions
heterojunctions
Conversion efficiency
Pulsed laser deposition
Excitons
pulsed laser deposition
Solar cells
solar cells
excitons
Thin films
thin films

Keywords

  • BiO
  • heterojunctions
  • InGaN
  • P3HT
  • photovoltaic effects

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry
  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

Cite this

Enhanced efficiency in InGaN-based photovoltaic devices combined with nanocrystalline Bi2O3/P3HT heterojunction structures. / Lai, Chun Feng; Chang, Chung-Chieh; Wen, Min Hsueh; Lin, Chung Kwei; Wu, Mau Kuen.

In: Physica Status Solidi (A) Applications and Materials Science, Vol. 210, No. 6, 06.2013, p. 1133-1136.

Research output: Contribution to journalArticle

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AU - Lin, Chung Kwei

AU - Wu, Mau Kuen

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AB - This study experimentally investigates the ability of Bi2O 3/P3HT heterojunction thin films to improve the power-conversion efficiency of InGaN-based photovoltaic (PV) devices. InGaN-based PV devices combined with Bi2O3/P3HT heterojunctions were prepared using the pulsed laser deposition method. The Bi2O3/P3HT heterojunction creates carriers that combine with excitons through the light-absorbance process, which enhances the power-conversion efficiency of InGaN PV devices by approximately 36%. Thus, these Bi2O 3/P3HT heterojunctions can provide an efficiency improvement in InGaN PV devices and other related solar-cell applications.

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