Emission-tunable CuInS2/ZnS quantum dots: Structure, optical properties, and application in white light-emitting diodes with high color rendering index

Po Hsiang Chuang, Chun Che Lin, Ru Shi Liu

Research output: Contribution to journalArticle

156 Citations (Scopus)

Abstract

Synthesis and application of CuInS2/ZnS core/shell quantum dots (QDs) with varying [Cu]/[In] ratios were conducted using a stepwise solvothermal route. CuInS2(CIS) core QDs with varying [Cu]/[In] ratios exhibited deep-red emissions result from donor-acceptor pair recombination. The absorption and emission band gap of the CuInS2QDs increased with the decrease in Cu content. The emission bands of the CuInS2/ZnS were tuned from 550 to 616 nm by controlling the [Cu]/[In] ratio after coating ZnS layer. The CIS QDs model was developed to elucidate the synthesized crystal structure and photoluminescence of the QDs with various [Cu]/[In] ratios. Temperature-dependent photoluminescence spectra of the CIS/ZnS QDs were also investigated. The temperature dependency of the photoluminescence energy and intensity for various CIS/ZnS QDs were studied from 25 to 200 °C. Efficient white light-emitting diodes with high color rendering index values (Ra = 90) were fabricated using CIS/ZnS QDs as color converters in combination with green light-emitting Ba2SiO4:Eu2+phosphors and blue light-emitting diodes.

Original languageEnglish
Pages (from-to)15379-15387
Number of pages9
JournalACS Applied Materials and Interfaces
Volume6
Issue number17
DOIs
Publication statusPublished - Jan 1 2014
Externally publishedYes

Keywords

  • color rendering index
  • CuInS
  • donor-acceptor pair
  • light-emitting diodes
  • quantum dots
  • temperature-dependent photoluminescence

ASJC Scopus subject areas

  • Materials Science(all)

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