Eliminating surface effects via employing nitrogen doping to significantly improve the stability and reliability of ZnO resistive memory

Teng Han Huang, Po Kang Yang, Wen Yuan Chang, Jui Fen Chien, Chen Fang Kang, Miin Jang Chen, Jr Hau He

Research output: Contribution to journalArticle

35 Citations (Scopus)

Abstract

Metal oxides suffering from oxygen molecule chemisorption display environment-dependent metastability, leading to unstable resistive memory characteristics and performance degradation. To obtain ambient-independent characteristics, we introduced nitrogen into ZnO resistive memory devices, compensating for the native defects and suppressing oxygen chemisorption, giving rise to a significant improvement in switching behavior without undesired surface effects. Moreover, by thermal activation of the nitrogen doping via annealing, an increased yield ratio from 50% to 82%, a reduced current compliance from 15 mA to 5 mA, and more stable cycling endurance are obtained. Our findings give physical insight into designing resistive memory devices.

Original languageEnglish
Pages (from-to)7593-7597
Number of pages5
JournalJournal of Materials Chemistry C
Volume1
Issue number45
DOIs
Publication statusPublished - Dec 7 2013
Externally publishedYes

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ASJC Scopus subject areas

  • Chemistry(all)
  • Materials Chemistry

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