Eliminating surface effects via employing nitrogen doping to significantly improve the stability and reliability of ZnO resistive memory

Teng Han Huang, Po Kang Yang, Wen Yuan Chang, Jui Fen Chien, Chen Fang Kang, Miin Jang Chen, Jr Hau He

Research output: Contribution to journalArticle

34 Citations (Scopus)

Abstract

Metal oxides suffering from oxygen molecule chemisorption display environment-dependent metastability, leading to unstable resistive memory characteristics and performance degradation. To obtain ambient-independent characteristics, we introduced nitrogen into ZnO resistive memory devices, compensating for the native defects and suppressing oxygen chemisorption, giving rise to a significant improvement in switching behavior without undesired surface effects. Moreover, by thermal activation of the nitrogen doping via annealing, an increased yield ratio from 50% to 82%, a reduced current compliance from 15 mA to 5 mA, and more stable cycling endurance are obtained. Our findings give physical insight into designing resistive memory devices.

Original languageEnglish
Pages (from-to)7593-7597
Number of pages5
JournalJournal of Materials Chemistry C
Volume1
Issue number45
DOIs
Publication statusPublished - Dec 7 2013
Externally publishedYes

Fingerprint

Nitrogen
Doping (additives)
Chemisorption
Data storage equipment
Oxygen
Oxides
Durability
Metals
Chemical activation
Annealing
Degradation
Defects
Molecules
Compliance
Hot Temperature

ASJC Scopus subject areas

  • Chemistry(all)
  • Materials Chemistry

Cite this

Eliminating surface effects via employing nitrogen doping to significantly improve the stability and reliability of ZnO resistive memory. / Huang, Teng Han; Yang, Po Kang; Chang, Wen Yuan; Chien, Jui Fen; Kang, Chen Fang; Chen, Miin Jang; He, Jr Hau.

In: Journal of Materials Chemistry C, Vol. 1, No. 45, 07.12.2013, p. 7593-7597.

Research output: Contribution to journalArticle

Huang, Teng Han ; Yang, Po Kang ; Chang, Wen Yuan ; Chien, Jui Fen ; Kang, Chen Fang ; Chen, Miin Jang ; He, Jr Hau. / Eliminating surface effects via employing nitrogen doping to significantly improve the stability and reliability of ZnO resistive memory. In: Journal of Materials Chemistry C. 2013 ; Vol. 1, No. 45. pp. 7593-7597.
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