Efficient and Stable Vacuum-Free-Processed Perovskite Solar Cells Enabled by a Robust Solution-Processed Hole Transport Layer

Chih Yu Chang, Bo Chou Tsai, Yu Cheng Hsiao

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

Here, efficient and stable vacuum-free processed perovskite solar cells (PSCs) are demonstrated by employing solutionprocessed molybdenum tris-[1-(trifluoroethanoyl)-2-(trifluoromethyl)ethane-1,2-dithiolene] (Mo(tfd-COCF3)3)-doped poly(3,4-ethylenedioxythiophene) (PEDOT) film as hole transport layer (HTL). Our results indicate that the incorporation of Mo(tfd-COCF3)3 dopant can induce p-doping through charge transfer from the highest occupied molecular orbital (HOMO) level of the PEDOT host to the electron affinity of Mo(tfd-COCF3)3, leading to an increase in conductivity by more than three orders of magnitude. With this newly developed p-doped film as HTL in planar heterojunction PSCs, a high power conversion efficiency (PCE) up to 18.47 % can be achieved, which exceeds that of the device with commonly used HTL 2,2′,7,7′-tetrakis(N,N-di-p-methoxyphenyl-amine)9,9′-spirobifluorene (spiro-OMeTAD). Taking the advantage of the high conductivity of this doped film, a prominent PCE as high as 15.58 % is also demonstrated even when a large HTL thickness of 220 nm is used. Importantly, the high quality film of this HTL is capable of acting as an effective passivation layer to keep the underlying perovskite layer intact during solution-processed Ag-nanoparticles layer deposition. The resulting vacuum-free PSCs deliver an impressive PCE of 14.81 %, which represents the highest performance ever reported for vacuum-free PSCs. Furthermore, the resulting devices show good ambient stability without encapsulation.

Original languageEnglish
Pages (from-to)1981-1988
Number of pages8
JournalChemSusChem
Volume10
Issue number9
DOIs
Publication statusPublished - Jan 1 2017
Externally publishedYes

Fingerprint

perovskite
Vacuum
Conversion efficiency
Doping (additives)
Electron affinity
Ethane
Molybdenum
Molecular orbitals
Encapsulation
Passivation
Perovskite
Amines
Heterojunctions
Charge transfer
conductivity
Nanoparticles
encapsulation
Perovskite solar cells
solar cell
ethane

Keywords

  • doping
  • hole transport layer
  • interface
  • perovskite solar cells
  • power conversion efficiency

ASJC Scopus subject areas

  • Environmental Chemistry
  • Chemical Engineering(all)
  • Materials Science(all)
  • Energy(all)

Cite this

Efficient and Stable Vacuum-Free-Processed Perovskite Solar Cells Enabled by a Robust Solution-Processed Hole Transport Layer. / Chang, Chih Yu; Tsai, Bo Chou; Hsiao, Yu Cheng.

In: ChemSusChem, Vol. 10, No. 9, 01.01.2017, p. 1981-1988.

Research output: Contribution to journalArticle

@article{ba4072020dcf461c94fb4bb01582f509,
title = "Efficient and Stable Vacuum-Free-Processed Perovskite Solar Cells Enabled by a Robust Solution-Processed Hole Transport Layer",
abstract = "Here, efficient and stable vacuum-free processed perovskite solar cells (PSCs) are demonstrated by employing solutionprocessed molybdenum tris-[1-(trifluoroethanoyl)-2-(trifluoromethyl)ethane-1,2-dithiolene] (Mo(tfd-COCF3)3)-doped poly(3,4-ethylenedioxythiophene) (PEDOT) film as hole transport layer (HTL). Our results indicate that the incorporation of Mo(tfd-COCF3)3 dopant can induce p-doping through charge transfer from the highest occupied molecular orbital (HOMO) level of the PEDOT host to the electron affinity of Mo(tfd-COCF3)3, leading to an increase in conductivity by more than three orders of magnitude. With this newly developed p-doped film as HTL in planar heterojunction PSCs, a high power conversion efficiency (PCE) up to 18.47 {\%} can be achieved, which exceeds that of the device with commonly used HTL 2,2′,7,7′-tetrakis(N,N-di-p-methoxyphenyl-amine)9,9′-spirobifluorene (spiro-OMeTAD). Taking the advantage of the high conductivity of this doped film, a prominent PCE as high as 15.58 {\%} is also demonstrated even when a large HTL thickness of 220 nm is used. Importantly, the high quality film of this HTL is capable of acting as an effective passivation layer to keep the underlying perovskite layer intact during solution-processed Ag-nanoparticles layer deposition. The resulting vacuum-free PSCs deliver an impressive PCE of 14.81 {\%}, which represents the highest performance ever reported for vacuum-free PSCs. Furthermore, the resulting devices show good ambient stability without encapsulation.",
keywords = "doping, hole transport layer, interface, perovskite solar cells, power conversion efficiency",
author = "Chang, {Chih Yu} and Tsai, {Bo Chou} and Hsiao, {Yu Cheng}",
year = "2017",
month = "1",
day = "1",
doi = "10.1002/cssc.201700340",
language = "English",
volume = "10",
pages = "1981--1988",
journal = "ChemSusChem",
issn = "1864-5631",
publisher = "Wiley-VCH Verlag",
number = "9",

}

TY - JOUR

T1 - Efficient and Stable Vacuum-Free-Processed Perovskite Solar Cells Enabled by a Robust Solution-Processed Hole Transport Layer

AU - Chang, Chih Yu

AU - Tsai, Bo Chou

AU - Hsiao, Yu Cheng

PY - 2017/1/1

Y1 - 2017/1/1

N2 - Here, efficient and stable vacuum-free processed perovskite solar cells (PSCs) are demonstrated by employing solutionprocessed molybdenum tris-[1-(trifluoroethanoyl)-2-(trifluoromethyl)ethane-1,2-dithiolene] (Mo(tfd-COCF3)3)-doped poly(3,4-ethylenedioxythiophene) (PEDOT) film as hole transport layer (HTL). Our results indicate that the incorporation of Mo(tfd-COCF3)3 dopant can induce p-doping through charge transfer from the highest occupied molecular orbital (HOMO) level of the PEDOT host to the electron affinity of Mo(tfd-COCF3)3, leading to an increase in conductivity by more than three orders of magnitude. With this newly developed p-doped film as HTL in planar heterojunction PSCs, a high power conversion efficiency (PCE) up to 18.47 % can be achieved, which exceeds that of the device with commonly used HTL 2,2′,7,7′-tetrakis(N,N-di-p-methoxyphenyl-amine)9,9′-spirobifluorene (spiro-OMeTAD). Taking the advantage of the high conductivity of this doped film, a prominent PCE as high as 15.58 % is also demonstrated even when a large HTL thickness of 220 nm is used. Importantly, the high quality film of this HTL is capable of acting as an effective passivation layer to keep the underlying perovskite layer intact during solution-processed Ag-nanoparticles layer deposition. The resulting vacuum-free PSCs deliver an impressive PCE of 14.81 %, which represents the highest performance ever reported for vacuum-free PSCs. Furthermore, the resulting devices show good ambient stability without encapsulation.

AB - Here, efficient and stable vacuum-free processed perovskite solar cells (PSCs) are demonstrated by employing solutionprocessed molybdenum tris-[1-(trifluoroethanoyl)-2-(trifluoromethyl)ethane-1,2-dithiolene] (Mo(tfd-COCF3)3)-doped poly(3,4-ethylenedioxythiophene) (PEDOT) film as hole transport layer (HTL). Our results indicate that the incorporation of Mo(tfd-COCF3)3 dopant can induce p-doping through charge transfer from the highest occupied molecular orbital (HOMO) level of the PEDOT host to the electron affinity of Mo(tfd-COCF3)3, leading to an increase in conductivity by more than three orders of magnitude. With this newly developed p-doped film as HTL in planar heterojunction PSCs, a high power conversion efficiency (PCE) up to 18.47 % can be achieved, which exceeds that of the device with commonly used HTL 2,2′,7,7′-tetrakis(N,N-di-p-methoxyphenyl-amine)9,9′-spirobifluorene (spiro-OMeTAD). Taking the advantage of the high conductivity of this doped film, a prominent PCE as high as 15.58 % is also demonstrated even when a large HTL thickness of 220 nm is used. Importantly, the high quality film of this HTL is capable of acting as an effective passivation layer to keep the underlying perovskite layer intact during solution-processed Ag-nanoparticles layer deposition. The resulting vacuum-free PSCs deliver an impressive PCE of 14.81 %, which represents the highest performance ever reported for vacuum-free PSCs. Furthermore, the resulting devices show good ambient stability without encapsulation.

KW - doping

KW - hole transport layer

KW - interface

KW - perovskite solar cells

KW - power conversion efficiency

UR - http://www.scopus.com/inward/record.url?scp=85017626017&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85017626017&partnerID=8YFLogxK

U2 - 10.1002/cssc.201700340

DO - 10.1002/cssc.201700340

M3 - Article

C2 - 28334500

AN - SCOPUS:85017626017

VL - 10

SP - 1981

EP - 1988

JO - ChemSusChem

JF - ChemSusChem

SN - 1864-5631

IS - 9

ER -