Effects of capping layers on the electrical characteristics of nickel silicided junctions

Chi Chang Wu, Wen Fa Wu, P. Y. Su, L. J. Chen, Fu Hsiang Ko

Research output: Contribution to journalArticle

13 Citations (Scopus)

Abstract

In this paper, effects of capping layers on formation and electrical properties of Ni-silicided junctions have been investigated. Nickel silicide films using the Ti or TiN-capped layer process are used to compare to those by the uncapped process. The uncapped (Ni single layer) and TiN-capped samples are shown to exhibit better thermal stability than the Ti-capped samples. For the silicided junctions, samples using Ti capping layer processes exhibit larger leakage current densities. A high-resistivity NixTiySiz compound layer is formed on the surface during silicidation for the Ti-capped sample, while the uncapped and TiN-capped samples are not. In addition, it is found that the thickness of NiSi layer, as well as the NixTiySiz layer, increases with increasing the Ti capping layer thickness. The formation of NixTiySiz layer not only increases the contact resistance, but also deepens the silicide thickness.

Original languageEnglish
Pages (from-to)1801-1805
Number of pages5
JournalMicroelectronic Engineering
Volume84
Issue number5-8
DOIs
Publication statusPublished - May 2007
Externally publishedYes

Fingerprint

Contact resistance
Nickel
Leakage currents
Electric properties
Thermodynamic stability
Current density
nickel
nickel silicide
contact resistance
leakage
thermal stability
electrical properties
current density
electrical resistivity

Keywords

  • Capping layer
  • Junction diode
  • Nickel silicide

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Surfaces, Coatings and Films
  • Atomic and Molecular Physics, and Optics

Cite this

Effects of capping layers on the electrical characteristics of nickel silicided junctions. / Wu, Chi Chang; Wu, Wen Fa; Su, P. Y.; Chen, L. J.; Ko, Fu Hsiang.

In: Microelectronic Engineering, Vol. 84, No. 5-8, 05.2007, p. 1801-1805.

Research output: Contribution to journalArticle

Wu, Chi Chang ; Wu, Wen Fa ; Su, P. Y. ; Chen, L. J. ; Ko, Fu Hsiang. / Effects of capping layers on the electrical characteristics of nickel silicided junctions. In: Microelectronic Engineering. 2007 ; Vol. 84, No. 5-8. pp. 1801-1805.
@article{ff72aef1d92c419da3a897123ed8b6d6,
title = "Effects of capping layers on the electrical characteristics of nickel silicided junctions",
abstract = "In this paper, effects of capping layers on formation and electrical properties of Ni-silicided junctions have been investigated. Nickel silicide films using the Ti or TiN-capped layer process are used to compare to those by the uncapped process. The uncapped (Ni single layer) and TiN-capped samples are shown to exhibit better thermal stability than the Ti-capped samples. For the silicided junctions, samples using Ti capping layer processes exhibit larger leakage current densities. A high-resistivity NixTiySiz compound layer is formed on the surface during silicidation for the Ti-capped sample, while the uncapped and TiN-capped samples are not. In addition, it is found that the thickness of NiSi layer, as well as the NixTiySiz layer, increases with increasing the Ti capping layer thickness. The formation of NixTiySiz layer not only increases the contact resistance, but also deepens the silicide thickness.",
keywords = "Capping layer, Junction diode, Nickel silicide",
author = "Wu, {Chi Chang} and Wu, {Wen Fa} and Su, {P. Y.} and Chen, {L. J.} and Ko, {Fu Hsiang}",
year = "2007",
month = "5",
doi = "10.1016/j.mee.2007.01.198",
language = "English",
volume = "84",
pages = "1801--1805",
journal = "Microelectronic Engineering",
issn = "0167-9317",
publisher = "Elsevier",
number = "5-8",

}

TY - JOUR

T1 - Effects of capping layers on the electrical characteristics of nickel silicided junctions

AU - Wu, Chi Chang

AU - Wu, Wen Fa

AU - Su, P. Y.

AU - Chen, L. J.

AU - Ko, Fu Hsiang

PY - 2007/5

Y1 - 2007/5

N2 - In this paper, effects of capping layers on formation and electrical properties of Ni-silicided junctions have been investigated. Nickel silicide films using the Ti or TiN-capped layer process are used to compare to those by the uncapped process. The uncapped (Ni single layer) and TiN-capped samples are shown to exhibit better thermal stability than the Ti-capped samples. For the silicided junctions, samples using Ti capping layer processes exhibit larger leakage current densities. A high-resistivity NixTiySiz compound layer is formed on the surface during silicidation for the Ti-capped sample, while the uncapped and TiN-capped samples are not. In addition, it is found that the thickness of NiSi layer, as well as the NixTiySiz layer, increases with increasing the Ti capping layer thickness. The formation of NixTiySiz layer not only increases the contact resistance, but also deepens the silicide thickness.

AB - In this paper, effects of capping layers on formation and electrical properties of Ni-silicided junctions have been investigated. Nickel silicide films using the Ti or TiN-capped layer process are used to compare to those by the uncapped process. The uncapped (Ni single layer) and TiN-capped samples are shown to exhibit better thermal stability than the Ti-capped samples. For the silicided junctions, samples using Ti capping layer processes exhibit larger leakage current densities. A high-resistivity NixTiySiz compound layer is formed on the surface during silicidation for the Ti-capped sample, while the uncapped and TiN-capped samples are not. In addition, it is found that the thickness of NiSi layer, as well as the NixTiySiz layer, increases with increasing the Ti capping layer thickness. The formation of NixTiySiz layer not only increases the contact resistance, but also deepens the silicide thickness.

KW - Capping layer

KW - Junction diode

KW - Nickel silicide

UR - http://www.scopus.com/inward/record.url?scp=34247571929&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=34247571929&partnerID=8YFLogxK

U2 - 10.1016/j.mee.2007.01.198

DO - 10.1016/j.mee.2007.01.198

M3 - Article

AN - SCOPUS:34247571929

VL - 84

SP - 1801

EP - 1805

JO - Microelectronic Engineering

JF - Microelectronic Engineering

SN - 0167-9317

IS - 5-8

ER -