Effects of capping layers on the electrical characteristics of nickel silicided junctions

Chi Chang Wu, Wen Fa Wu, P. Y. Su, L. J. Chen, Fu Hsiang Ko

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13 Citations (Scopus)

Abstract

In this paper, effects of capping layers on formation and electrical properties of Ni-silicided junctions have been investigated. Nickel silicide films using the Ti or TiN-capped layer process are used to compare to those by the uncapped process. The uncapped (Ni single layer) and TiN-capped samples are shown to exhibit better thermal stability than the Ti-capped samples. For the silicided junctions, samples using Ti capping layer processes exhibit larger leakage current densities. A high-resistivity NixTiySiz compound layer is formed on the surface during silicidation for the Ti-capped sample, while the uncapped and TiN-capped samples are not. In addition, it is found that the thickness of NiSi layer, as well as the NixTiySiz layer, increases with increasing the Ti capping layer thickness. The formation of NixTiySiz layer not only increases the contact resistance, but also deepens the silicide thickness.

Original languageEnglish
Pages (from-to)1801-1805
Number of pages5
JournalMicroelectronic Engineering
Volume84
Issue number5-8
DOIs
Publication statusPublished - May 2007
Externally publishedYes

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Keywords

  • Capping layer
  • Junction diode
  • Nickel silicide

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Surfaces, Coatings and Films
  • Atomic and Molecular Physics, and Optics

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