Effect of the Bulk Charge on the Thermal Noise in Mental-Oxide-Silicon Field-Effect Transistors

C. T. Sah, F. H. Hielscher, S. Y. Wu

Research output: Contribution to journalArticle

1 Citation (Scopus)
Original languageEnglish
Pages (from-to)509-510
Number of pages2
JournalIEEE Transactions on Electron Devices
Volume12
Issue number9
DOIs
Publication statusPublished - Jan 1 1965
Externally publishedYes

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Thermal noise
Silicon oxides
Field effect transistors

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Effect of the Bulk Charge on the Thermal Noise in Mental-Oxide-Silicon Field-Effect Transistors. / Sah, C. T.; Hielscher, F. H.; Wu, S. Y.

In: IEEE Transactions on Electron Devices, Vol. 12, No. 9, 01.01.1965, p. 509-510.

Research output: Contribution to journalArticle

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