TY - JOUR
T1 - Design and fabrication of micro-LED array with application-specific integrated circuits (ASICs) light emitting display
AU - Liou, Jian Chiun
AU - Yang, Cheng Fu
N1 - Funding Information:
Acknowledgements This work was supported by Industrial Technology Research Institute Electronics and Opto-Electronics Research Laboratories, Ming-Hsien Wu, Yi-Chen Lin, Chia-Hsin Chao, and Yen-Hsiang Fang. And the authors acknowledge of MOST 105-2221-E-151-065-.
Funding Information:
This work was supported by Industrial Technology Research Institute Electronics and Opto-Electronics Research Laboratories, Ming-Hsien Wu, Yi-Chen Lin, Chia-Hsin Chao, and Yen-Hsiang Fang. And the authors acknowledge of MOST 105-2221-E-151-065-. The authors declare no conflict of interest.
Publisher Copyright:
© 2017, Springer-Verlag GmbH Germany, part of Springer Nature.
PY - 2018/10/1
Y1 - 2018/10/1
N2 - An optimized array process of micro light-emitting diode (LED) display is descripted as follows. Silicon nitride (SiNx) is the main component of dielectric protective layer as a mask layer in the fine-grain etching process of LED pixel platform. GaN-based material is etched by the etching mask layer. The size of 12 × 12 μm micro-die LED array is used as the test pattern, and an approximate thickness of SiNx film is 2.63 μm during LED epitaxial growth. An etch mask of SiNx dielectric protection layer and the inductively coupled plasma etching equipment are utilized for etching the pattern and transferring to GaN LED epitaxial film. The etch depth is about 6.4 μm, and the final pattern size is about 11.06 μm. The ultimate etched sidewall angle of micro-grain GaN LED is close to vertical. During the dip-coating process, the etching shift on top of the fine crystal GaN LED platform becomes narrower because of the larger size of the dielectric protection layer. The metal contact electrodes are fabricated on micro LED die platform. The results of this research are valuable for driving the micro-LED display with application-specific integrated circuits (ASICs) system. The shift register, the counter, and the decoder module are combined in ASIC system as a novel technique. Three-dimensional multi-data processing chip can control the drive of 128 × 40 matrix and a total of 5120 LED number, and driving the entire panel takes only 20.5 ms.
AB - An optimized array process of micro light-emitting diode (LED) display is descripted as follows. Silicon nitride (SiNx) is the main component of dielectric protective layer as a mask layer in the fine-grain etching process of LED pixel platform. GaN-based material is etched by the etching mask layer. The size of 12 × 12 μm micro-die LED array is used as the test pattern, and an approximate thickness of SiNx film is 2.63 μm during LED epitaxial growth. An etch mask of SiNx dielectric protection layer and the inductively coupled plasma etching equipment are utilized for etching the pattern and transferring to GaN LED epitaxial film. The etch depth is about 6.4 μm, and the final pattern size is about 11.06 μm. The ultimate etched sidewall angle of micro-grain GaN LED is close to vertical. During the dip-coating process, the etching shift on top of the fine crystal GaN LED platform becomes narrower because of the larger size of the dielectric protection layer. The metal contact electrodes are fabricated on micro LED die platform. The results of this research are valuable for driving the micro-LED display with application-specific integrated circuits (ASICs) system. The shift register, the counter, and the decoder module are combined in ASIC system as a novel technique. Three-dimensional multi-data processing chip can control the drive of 128 × 40 matrix and a total of 5120 LED number, and driving the entire panel takes only 20.5 ms.
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U2 - 10.1007/s00542-017-3640-1
DO - 10.1007/s00542-017-3640-1
M3 - Article
AN - SCOPUS:85034578613
SN - 0946-7076
VL - 24
SP - 4089
EP - 4099
JO - Microsystem Technologies
JF - Microsystem Technologies
IS - 10
ER -