Deposition of AlGaN films on (111) Si substrates and optimization of GaN growth on Si using intermediate-temperature AlGaN buffer layers

Cheng Liang Wang, Jyh Rong Gong, Wei Tsai Liao, Chung Kwei Lin, Tai Yuan Lin

Research output: Contribution to journalArticle


AlxGa1-xN films having various Al-contents were grown on (111) Si substrates over a temperature range of 800∼1000 °C. It was found that crack free AlxGa1-xN films were achieved when the films were grown at 800 °C. High temperature (HT) GaN films were also deposited on (111) Si substrates using 800 °C grown AlxGa 1-xN buffer layers with different thickness and composition combinations. The best HT GaN film was achieved on (111) Si substrate by process optimization with an 800 °C grown 180 nm-thick Al0.58Ga 0.42N buffer layer. Room temperature photoluminescence (PL) spectrum of the HT GaN film shows a strong near band edge emission having a linewidth of 100 meV and a quenched yellow luminescence. It is believed that the use of intermediate temperature AlxGa1-xN buffer layer is beneficial to accommodate the misfit strain between HT GaN film and (111) Si substrate.

Original languageEnglish
Pages (from-to)135-138
Number of pages4
JournalThin Solid Films
Issue number1-2
Publication statusPublished - Dec 22 2005
Externally publishedYes



  • 320 Nitrides
  • 345 Optical properties
  • 430 Semiconductors
  • 91 Deposition process

ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Condensed Matter Physics
  • Surfaces and Interfaces

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