Deposition of AlGaN films on (111) Si substrates and optimization of GaN growth on Si using intermediate-temperature AlGaN buffer layers

Cheng Liang Wang, Jyh Rong Gong, Wei Tsai Liao, Chung Kwei Lin, Tai Yuan Lin

Research output: Contribution to journalArticle

Abstract

AlxGa1-xN films having various Al-contents were grown on (111) Si substrates over a temperature range of 800∼1000 °C. It was found that crack free AlxGa1-xN films were achieved when the films were grown at 800 °C. High temperature (HT) GaN films were also deposited on (111) Si substrates using 800 °C grown AlxGa 1-xN buffer layers with different thickness and composition combinations. The best HT GaN film was achieved on (111) Si substrate by process optimization with an 800 °C grown 180 nm-thick Al0.58Ga 0.42N buffer layer. Room temperature photoluminescence (PL) spectrum of the HT GaN film shows a strong near band edge emission having a linewidth of 100 meV and a quenched yellow luminescence. It is believed that the use of intermediate temperature AlxGa1-xN buffer layer is beneficial to accommodate the misfit strain between HT GaN film and (111) Si substrate.

Original languageEnglish
Pages (from-to)135-138
Number of pages4
JournalThin Solid Films
Volume493
Issue number1-2
DOIs
Publication statusPublished - Dec 22 2005
Externally publishedYes

Fingerprint

Buffer layers
buffers
optimization
Substrates
Temperature
temperature
aluminum gallium nitride
Linewidth
Luminescence
Photoluminescence
cracks
luminescence
Cracks
photoluminescence
room temperature
Chemical analysis

Keywords

  • 320 Nitrides
  • 345 Optical properties
  • 430 Semiconductors
  • 91 Deposition process

ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Condensed Matter Physics
  • Surfaces and Interfaces

Cite this

Deposition of AlGaN films on (111) Si substrates and optimization of GaN growth on Si using intermediate-temperature AlGaN buffer layers. / Wang, Cheng Liang; Gong, Jyh Rong; Liao, Wei Tsai; Lin, Chung Kwei; Lin, Tai Yuan.

In: Thin Solid Films, Vol. 493, No. 1-2, 22.12.2005, p. 135-138.

Research output: Contribution to journalArticle

Wang, Cheng Liang ; Gong, Jyh Rong ; Liao, Wei Tsai ; Lin, Chung Kwei ; Lin, Tai Yuan. / Deposition of AlGaN films on (111) Si substrates and optimization of GaN growth on Si using intermediate-temperature AlGaN buffer layers. In: Thin Solid Films. 2005 ; Vol. 493, No. 1-2. pp. 135-138.
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AU - Lin, Chung Kwei

AU - Lin, Tai Yuan

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N2 - AlxGa1-xN films having various Al-contents were grown on (111) Si substrates over a temperature range of 800∼1000 °C. It was found that crack free AlxGa1-xN films were achieved when the films were grown at 800 °C. High temperature (HT) GaN films were also deposited on (111) Si substrates using 800 °C grown AlxGa 1-xN buffer layers with different thickness and composition combinations. The best HT GaN film was achieved on (111) Si substrate by process optimization with an 800 °C grown 180 nm-thick Al0.58Ga 0.42N buffer layer. Room temperature photoluminescence (PL) spectrum of the HT GaN film shows a strong near band edge emission having a linewidth of 100 meV and a quenched yellow luminescence. It is believed that the use of intermediate temperature AlxGa1-xN buffer layer is beneficial to accommodate the misfit strain between HT GaN film and (111) Si substrate.

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