Correction: Low-temperature formed quaternary NiZrSiGe nanocrystal memory [Int. J. Electrochem. Sci., 10 (2015) (6500-6508)]

Chia-Yu Wu, Huei Yu Huang, Chi Chang Wu

Research output: Contribution to journalComment/debate

Abstract

This was not noticed at the time by the authors and it is corrected by this correction now, and we apologize for any inconvenience this may cause.

Original languageEnglish
Pages (from-to)6156
Number of pages1
JournalInternational Journal of Electrochemical Science
Volume13
Issue number6
DOIs
Publication statusPublished - Jun 1 2018

Fingerprint

Nanocrystals
Data storage equipment
Temperature

ASJC Scopus subject areas

  • Electrochemistry

Cite this

Correction : Low-temperature formed quaternary NiZrSiGe nanocrystal memory [Int. J. Electrochem. Sci., 10 (2015) (6500-6508)]. / Wu, Chia-Yu; Huang, Huei Yu; Wu, Chi Chang.

In: International Journal of Electrochemical Science, Vol. 13, No. 6, 01.06.2018, p. 6156.

Research output: Contribution to journalComment/debate

@article{85b94b49ac204c74b615fb2777ffe70e,
title = "Correction: Low-temperature formed quaternary NiZrSiGe nanocrystal memory [Int. J. Electrochem. Sci., 10 (2015) (6500-6508)]",
abstract = "This was not noticed at the time by the authors and it is corrected by this correction now, and we apologize for any inconvenience this may cause.",
author = "Chia-Yu Wu and Huang, {Huei Yu} and Wu, {Chi Chang}",
year = "2018",
month = "6",
day = "1",
doi = "10.20964/2018.06.300",
language = "English",
volume = "13",
pages = "6156",
journal = "International Journal of Electrochemical Science",
issn = "1452-3981",
publisher = "Electrochemical Science Group",
number = "6",

}

TY - JOUR

T1 - Correction

T2 - Low-temperature formed quaternary NiZrSiGe nanocrystal memory [Int. J. Electrochem. Sci., 10 (2015) (6500-6508)]

AU - Wu, Chia-Yu

AU - Huang, Huei Yu

AU - Wu, Chi Chang

PY - 2018/6/1

Y1 - 2018/6/1

N2 - This was not noticed at the time by the authors and it is corrected by this correction now, and we apologize for any inconvenience this may cause.

AB - This was not noticed at the time by the authors and it is corrected by this correction now, and we apologize for any inconvenience this may cause.

UR - http://www.scopus.com/inward/record.url?scp=85048269415&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85048269415&partnerID=8YFLogxK

U2 - 10.20964/2018.06.300

DO - 10.20964/2018.06.300

M3 - Comment/debate

AN - SCOPUS:85048269415

VL - 13

SP - 6156

JO - International Journal of Electrochemical Science

JF - International Journal of Electrochemical Science

SN - 1452-3981

IS - 6

ER -