Correction: Low-temperature formed quaternary NiZrSiGe nanocrystal memory [Int. J. Electrochem. Sci., 10 (2015) (6500-6508)]

Chia-Yu Wu, Huei Yu Huang, Chi Chang Wu

Research output: Contribution to journalComment/debatepeer-review

Abstract

This was not noticed at the time by the authors and it is corrected by this correction now, and we apologize for any inconvenience this may cause.

Original languageEnglish
Pages (from-to)6156
Number of pages1
JournalInternational Journal of Electrochemical Science
Volume13
Issue number6
DOIs
Publication statusPublished - Jun 1 2018

ASJC Scopus subject areas

  • Electrochemistry

Fingerprint Dive into the research topics of 'Correction: Low-temperature formed quaternary NiZrSiGe nanocrystal memory [Int. J. Electrochem. Sci., 10 (2015) (6500-6508)]'. Together they form a unique fingerprint.

Cite this