Comparative study of polycrystalline Ti, amorphous Ti, and multiamorphous Ti as a barrier film for Cu interconnect

Keng Liang Ou, Ming Sun Yu, Ray Quen Hsu, Ming Hong Lin

Research output: Contribution to journal › Article

8 Citations (Scopus)

Abstract

Ultrathin (10 nm) Ti films with various structures were deposited by physical vapor deposition (PVD) and chemical vapor deposition (CVD) processes. CVD-Ti films with low-temperature (

Original languageEnglish
Pages (from-to)229-235
Number of pages7
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume23
Issue number1
DOIs
Publication statusPublished - 2005

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Chemical vapor deposition
vapor deposition
Physical vapor deposition
Temperature

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Surfaces and Interfaces
  • Physics and Astronomy (miscellaneous)

Cite this

Comparative study of polycrystalline Ti, amorphous Ti, and multiamorphous Ti as a barrier film for Cu interconnect. / Ou, Keng Liang; Yu, Ming Sun; Hsu, Ray Quen; Lin, Ming Hong.

In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 23, No. 1, 2005, p. 229-235.

Research output: Contribution to journal › Article

Ou, KL, Yu, MS, Hsu, RQ & Lin, MH 2005, 'Comparative study of polycrystalline Ti, amorphous Ti, and multiamorphous Ti as a barrier film for Cu interconnect', Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, vol. 23, no. 1, pp. 229-235. https://doi.org/10.1116/1.1852466
Ou KL, Yu MS, Hsu RQ, Lin MH. Comparative study of polycrystalline Ti, amorphous Ti, and multiamorphous Ti as a barrier film for Cu interconnect. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 2005;23(1):229-235. https://doi.org/10.1116/1.1852466
Ou, Keng Liang ; Yu, Ming Sun ; Hsu, Ray Quen ; Lin, Ming Hong. / Comparative study of polycrystalline Ti, amorphous Ti, and multiamorphous Ti as a barrier film for Cu interconnect. In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 2005 ; Vol. 23, No. 1. pp. 229-235.
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