Abstract
Ultrathin (10 nm) Ti films with various structures were deposited by physical vapor deposition (PVD) and chemical vapor deposition (CVD) processes. CVD-Ti films with low-temperature (
| Original language | English |
|---|---|
| Pages (from-to) | 229-235 |
| Number of pages | 7 |
| Journal | Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures |
| Volume | 23 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - 2005 |
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Surfaces and Interfaces
- Physics and Astronomy (miscellaneous)
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Ou, K. L., Yu, M. S., Hsu, R. Q., & Lin, M. H. (2005). Comparative study of polycrystalline Ti, amorphous Ti, and multiamorphous Ti as a barrier film for Cu interconnect. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 23(1), 229-235. https://doi.org/10.1116/1.1852466