Comparative study of polycrystalline Ti, amorphous Ti, and multiamorphous Ti as a barrier film for Cu interconnect

Keng Liang Ou; Ming Sun Yu; Ray Quen Hsu; Ming Hong Lin

doi:10.1116/1.1852466

Comparative study of polycrystalline Ti, amorphous Ti, and multiamorphous Ti as a barrier film for Cu interconnect

Keng Liang Ou, Ming Sun Yu, Ray Quen Hsu, Ming Hong Lin

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

Ultrathin (10 nm) Ti films with various structures were deposited by physical vapor deposition (PVD) and chemical vapor deposition (CVD) processes. CVD-Ti films with low-temperature (

Original language	English
Pages (from-to)	229-235
Number of pages	7
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	23
Issue number	1
DOIs	https://doi.org/10.1116/1.1852466
Publication status	Published - 2005

ASJC Scopus subject areas

Electrical and Electronic Engineering
Surfaces and Interfaces
Physics and Astronomy (miscellaneous)

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10.1116/1.1852466

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Comparative study of polycrystalline Ti, amorphous Ti, and multiamorphous Ti as a barrier film for Cu interconnect. / Ou, Keng Liang; Yu, Ming Sun; Hsu, Ray Quen; Lin, Ming Hong.

In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 23, No. 1, 2005, p. 229-235.

Research output: Contribution to journal › Article › peer-review

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