Comparative study of polycrystalline Ti, amorphous Ti, and multiamorphous Ti as a barrier film for Cu interconnect

Keng Liang Ou, Ming Sun Yu, Ray Quen Hsu, Ming Hong Lin

Research output: Contribution to journalArticle

8 Citations (Scopus)


Ultrathin (10 nm) Ti films with various structures were deposited by physical vapor deposition (PVD) and chemical vapor deposition (CVD) processes. CVD-Ti films with low-temperature (

Original languageEnglish
Pages (from-to)229-235
Number of pages7
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Issue number1
Publication statusPublished - 2005


ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Surfaces and Interfaces
  • Physics and Astronomy (miscellaneous)

Cite this