Comparative study of polycrystalline Ti, amorphous Ti, and multiamorphous Ti as a barrier film for Cu interconnect

Keng Liang Ou; Ming Sun Yu; Ray Quen Hsu; Ming Hong Lin

doi:10.1116/1.1852466

Comparative study of polycrystalline Ti, amorphous Ti, and multiamorphous Ti as a barrier film for Cu interconnect

Keng Liang Ou, Ming Sun Yu, Ray Quen Hsu, Ming Hong Lin

Research output: Contribution to journal › Article

8 Citations (Scopus)

Abstract

Ultrathin (10 nm) Ti films with various structures were deposited by physical vapor deposition (PVD) and chemical vapor deposition (CVD) processes. CVD-Ti films with low-temperature (

Original language	English
Pages (from-to)	229-235
Number of pages	7
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	23
Issue number	1
DOIs	https://doi.org/10.1116/1.1852466
Publication status	Published - 2005

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ASJC Scopus subject areas

Electrical and Electronic Engineering
Surfaces and Interfaces
Physics and Astronomy (miscellaneous)

Cite this

Ou, K. L., Yu, M. S., Hsu, R. Q., & Lin, M. H. (2005). Comparative study of polycrystalline Ti, amorphous Ti, and multiamorphous Ti as a barrier film for Cu interconnect. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 23(1), 229-235. https://doi.org/10.1116/1.1852466

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Access to Document

10.1116/1.1852466