Comparative study of polycrystalline Ti, amorphous Ti, and multiamorphous Ti as a barrier film for Cu interconnect

Keng Liang Ou, Ming Sun Yu, Ray Quen Hsu, Ming Hong Lin

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

Ultrathin (10 nm) Ti films with various structures were deposited by physical vapor deposition (PVD) and chemical vapor deposition (CVD) processes. CVD-Ti films with low-temperature (

Original languageEnglish
Pages (from-to)229-235
Number of pages7
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume23
Issue number1
DOIs
Publication statusPublished - 2005

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Chemical vapor deposition
vapor deposition
Physical vapor deposition
Temperature

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Surfaces and Interfaces
  • Physics and Astronomy (miscellaneous)

Cite this

Comparative study of polycrystalline Ti, amorphous Ti, and multiamorphous Ti as a barrier film for Cu interconnect. / Ou, Keng Liang; Yu, Ming Sun; Hsu, Ray Quen; Lin, Ming Hong.

In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 23, No. 1, 2005, p. 229-235.

Research output: Contribution to journalArticle

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