Carbon nanotubes grown using cobalt silicide as catalyst and hydrogen pretreatment

Hua Chiang Wen, Koho Yang, Keng Liang Ou, Wen Fa Wu, Ren Chon Luo, Chang Pin Chou

Research output: Contribution to journalArticle

16 Citations (Scopus)

Abstract

Cobalt catalytic-layers 25 nm were deposited by sputtering on silicon substrates. At the pretreatments, hydrogen plasma was conducted for 4-16 min at 600 °C in a MPCVD system. Pretreated samples were characterized using SEM and AFM. Surface morphologies of catalytic-layers were changed after hydrogen plasma pretreatments. The cobalt layers became discontinuous and some nanoparticles were formed. With pretreatments for a long time, nanoparticles tended to agglomerate to reduce surface energy and larger nanoparticles were observed. It is believed that the optimum pretreatment condition for the growth of carbon nanotubes could be achieved because relatively high growth failure and nanofibers (>100 nm) was observed for shorter and longer than 12 min pretreatment, respectively. It is found that the hydrogen pretreatment is a crucial step for the making of nucleation sites in the synthesis of carbon nanotubes using cobalt silicide as catalyst on Si substrates. After the pretreatment, mixture gases of hydrogen and methane were then flowed into the chamber for 12 min, samples were characterized using SEM, TEM and Raman spectrum. Carbon atoms were adsorbed on the islands of catalysts, and then diffused into the edge of nanotubes. Cobalt silicides were formed due to high processing temperature, and cobalt atoms tended to diffuse and stay on the silicon substrates, which enhance carbon nanotubes to grow under the root growth mechanism.

Original languageEnglish
Pages (from-to)221-227
Number of pages7
JournalMicroelectronic Engineering
Volume82
Issue number3-4 SPEC. ISS.
DOIs
Publication statusPublished - Dec 2005

Fingerprint

Carbon Nanotubes
Cobalt
pretreatment
Hydrogen
Carbon nanotubes
cobalt
carbon nanotubes
catalysts
Catalysts
hydrogen
Silicon
Nanoparticles
Substrates
hydrogen plasma
nanoparticles
Plasmas
Atoms
Silicides
Scanning electron microscopy
Methane

Keywords

  • Cobalt silicide
  • Microwave CVD
  • Root growth mechanism

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Surfaces, Coatings and Films
  • Atomic and Molecular Physics, and Optics

Cite this

Wen, H. C., Yang, K., Ou, K. L., Wu, W. F., Luo, R. C., & Chou, C. P. (2005). Carbon nanotubes grown using cobalt silicide as catalyst and hydrogen pretreatment. Microelectronic Engineering, 82(3-4 SPEC. ISS.), 221-227. https://doi.org/10.1016/j.mee.2005.07.028

Carbon nanotubes grown using cobalt silicide as catalyst and hydrogen pretreatment. / Wen, Hua Chiang; Yang, Koho; Ou, Keng Liang; Wu, Wen Fa; Luo, Ren Chon; Chou, Chang Pin.

In: Microelectronic Engineering, Vol. 82, No. 3-4 SPEC. ISS., 12.2005, p. 221-227.

Research output: Contribution to journalArticle

Wen, HC, Yang, K, Ou, KL, Wu, WF, Luo, RC & Chou, CP 2005, 'Carbon nanotubes grown using cobalt silicide as catalyst and hydrogen pretreatment', Microelectronic Engineering, vol. 82, no. 3-4 SPEC. ISS., pp. 221-227. https://doi.org/10.1016/j.mee.2005.07.028
Wen, Hua Chiang ; Yang, Koho ; Ou, Keng Liang ; Wu, Wen Fa ; Luo, Ren Chon ; Chou, Chang Pin. / Carbon nanotubes grown using cobalt silicide as catalyst and hydrogen pretreatment. In: Microelectronic Engineering. 2005 ; Vol. 82, No. 3-4 SPEC. ISS. pp. 221-227.
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