Abstract

Aluminum nitride thin films were fabricated as stress biosensors for biosensing cell attachment. The features and capacitance of AlN films following cell culture were detected via leakage current density and biocompatibility testing. Analytical results demonstrate that the failure of the capacitors produced slit-like microvoids to form on the AlN film, following cell differentiation and proliferation. Slit-like microvoids incurred substantial current leaking of the cell cultured-capacitor, even at a low breakdown voltage. Stress variation during cell differentiation and proliferation were responsible for the formation of microvoids and the low breakdown voltage. The stress produced lattice distortion of the AlN film, resulting in a piezoelectric effect on the AlN film surface. Results of this study demonstrate that the piezoelectric AlN film is highly promising as a biosensing film.

Original languageEnglish
Pages (from-to)5173-5178
Number of pages6
JournalApplied Surface Science
Volume253
Issue number11
DOIs
Publication statusPublished - Mar 30 2007

Fingerprint

metal nitrides
Aluminum nitride
aluminum nitrides
capacitors
Capacitors
Metals
metals
Electric breakdown
electrical faults
slits
cells
Piezoelectricity
biocompatibility
Biocompatibility
bioinstrumentation
Cell culture
cultured cells
Biosensors
Leakage currents
attachment

Keywords

  • Aluminum nitride
  • Biocompatibility
  • Differentiation
  • Proliferation
  • Thin film

ASJC Scopus subject areas

  • Physical and Theoretical Chemistry
  • Surfaces, Coatings and Films
  • Condensed Matter Physics

Cite this

Biosensing of biophysical characterization by metal-aluminum nitride-metal capacitor. / Chen, Chang Chih; Lin, Che Tong; Lee, Sheng Yang; Lin, Ling Hong; Huang, Chiung Fang; Ou, Keng Liang.

In: Applied Surface Science, Vol. 253, No. 11, 30.03.2007, p. 5173-5178.

Research output: Contribution to journalArticle

Chen, Chang Chih ; Lin, Che Tong ; Lee, Sheng Yang ; Lin, Ling Hong ; Huang, Chiung Fang ; Ou, Keng Liang. / Biosensing of biophysical characterization by metal-aluminum nitride-metal capacitor. In: Applied Surface Science. 2007 ; Vol. 253, No. 11. pp. 5173-5178.
@article{58abc172c54a4975bc30fb4644180941,
title = "Biosensing of biophysical characterization by metal-aluminum nitride-metal capacitor",
abstract = "Aluminum nitride thin films were fabricated as stress biosensors for biosensing cell attachment. The features and capacitance of AlN films following cell culture were detected via leakage current density and biocompatibility testing. Analytical results demonstrate that the failure of the capacitors produced slit-like microvoids to form on the AlN film, following cell differentiation and proliferation. Slit-like microvoids incurred substantial current leaking of the cell cultured-capacitor, even at a low breakdown voltage. Stress variation during cell differentiation and proliferation were responsible for the formation of microvoids and the low breakdown voltage. The stress produced lattice distortion of the AlN film, resulting in a piezoelectric effect on the AlN film surface. Results of this study demonstrate that the piezoelectric AlN film is highly promising as a biosensing film.",
keywords = "Aluminum nitride, Biocompatibility, Differentiation, Proliferation, Thin film",
author = "Chen, {Chang Chih} and Lin, {Che Tong} and Lee, {Sheng Yang} and Lin, {Ling Hong} and Huang, {Chiung Fang} and Ou, {Keng Liang}",
year = "2007",
month = "3",
day = "30",
doi = "10.1016/j.apsusc.2006.11.037",
language = "English",
volume = "253",
pages = "5173--5178",
journal = "Applied Surface Science",
issn = "0169-4332",
publisher = "Elsevier B.V.",
number = "11",

}

TY - JOUR

T1 - Biosensing of biophysical characterization by metal-aluminum nitride-metal capacitor

AU - Chen, Chang Chih

AU - Lin, Che Tong

AU - Lee, Sheng Yang

AU - Lin, Ling Hong

AU - Huang, Chiung Fang

AU - Ou, Keng Liang

PY - 2007/3/30

Y1 - 2007/3/30

N2 - Aluminum nitride thin films were fabricated as stress biosensors for biosensing cell attachment. The features and capacitance of AlN films following cell culture were detected via leakage current density and biocompatibility testing. Analytical results demonstrate that the failure of the capacitors produced slit-like microvoids to form on the AlN film, following cell differentiation and proliferation. Slit-like microvoids incurred substantial current leaking of the cell cultured-capacitor, even at a low breakdown voltage. Stress variation during cell differentiation and proliferation were responsible for the formation of microvoids and the low breakdown voltage. The stress produced lattice distortion of the AlN film, resulting in a piezoelectric effect on the AlN film surface. Results of this study demonstrate that the piezoelectric AlN film is highly promising as a biosensing film.

AB - Aluminum nitride thin films were fabricated as stress biosensors for biosensing cell attachment. The features and capacitance of AlN films following cell culture were detected via leakage current density and biocompatibility testing. Analytical results demonstrate that the failure of the capacitors produced slit-like microvoids to form on the AlN film, following cell differentiation and proliferation. Slit-like microvoids incurred substantial current leaking of the cell cultured-capacitor, even at a low breakdown voltage. Stress variation during cell differentiation and proliferation were responsible for the formation of microvoids and the low breakdown voltage. The stress produced lattice distortion of the AlN film, resulting in a piezoelectric effect on the AlN film surface. Results of this study demonstrate that the piezoelectric AlN film is highly promising as a biosensing film.

KW - Aluminum nitride

KW - Biocompatibility

KW - Differentiation

KW - Proliferation

KW - Thin film

UR - http://www.scopus.com/inward/record.url?scp=33847303633&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33847303633&partnerID=8YFLogxK

U2 - 10.1016/j.apsusc.2006.11.037

DO - 10.1016/j.apsusc.2006.11.037

M3 - Article

AN - SCOPUS:33847303633

VL - 253

SP - 5173

EP - 5178

JO - Applied Surface Science

JF - Applied Surface Science

SN - 0169-4332

IS - 11

ER -